公开(公告)号：US20240222515A1

公开(公告)日：2024-07-04

申请号：US18398912

申请日：2023-12-28

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jeeeun YANG ,  Yongsung KIM ,  Sangwook KIM ,  Kwanghee LEE ,  Moonil JUNG

IPC: H01L29/786 ,  H01L29/423 ,  H10B10/00

CPC classification number: H01L29/7869 ,  H01L29/42392 ,  H10B10/12

Abstract: Provided are a semiconductor device including an oxide semiconductor layer and an electronic device including the semiconductor device. The semiconductor device includes a substrate, a first electrode provided on the substrate, a second electrode provided on the first electrode, an oxide semiconductor layer provided between the first electrode and the second electrode, a gate electrode provided in a thickness direction of the oxide semiconductor layer, and a gate insulating layer provided between the oxide semiconductor layer and the gate electrode, wherein a measurement density relative to a theoretical density of the oxide semiconductor layer is about 90% or more. The oxide semiconductor layer of the semiconductor device may have a more uniform and improved film density, and may improve the reliability of the device due to the improved film density.

公开(公告)号：US20240162350A1

公开(公告)日：2024-05-16

申请号：US18496353

申请日：2023-10-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： Moonil JUNG ,  Sangwook KIM ,  Euntae KIM ,  Jeeeun YANG ,  Kwanghee LEE ,  Youngkwan CHA

IPC: H01L29/786 ,  H01L29/10 ,  H01L29/66

CPC classification number: H01L29/7869 ,  H01L29/1054 ,  H01L29/66969 ,  H01L29/78648 ,  H01L29/78696

Abstract: Semiconductor devices and manufacturing methods thereof are provided. A semiconductor device includes a substrate, a lower electrode on the substrate, an oxide channel on the lower electrode, the oxide channel including vertical extension portions extending in a first direction perpendicular to the substrate, an upper electrode on the oxide channel, a gate insulator on a portion the oxide channel that is exposed by the lower electrode and the upper electrode, and a gate electrode on the gate insulator, wherein the upper electrode and the lower electrode are separated from each other by the oxide channel in the first direction, and the oxide channel is doped with ions.

公开(公告)号：US20240079468A1

公开(公告)日：2024-03-07

申请号：US18457803

申请日：2023-08-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Moonil JUNG ,  Sangwook KIM ,  Euntae KIM ,  Jeeeun YANG ,  Kwanghee LEE

IPC: H01L29/45 ,  H01L29/66 ,  H01L29/786

CPC classification number: H01L29/45 ,  H01L29/66969 ,  H01L29/78606 ,  H01L29/78642 ,  H01L29/7869 ,  H01L21/02491 ,  H01L29/78696

Abstract: Provided are a vertical transistor and a method of manufacturing the same. The vertical transistor includes a substrate, a lower electrode on the substrate and including a metal material, a carbon thin film being conductive and on the lower electrode, an oxide semiconductor layer on the carbon thin film, a gate electrode apart from the oxide semiconductor layer, a gate insulating layer arranged between the oxide semiconductor layer and the gate electrode, and an upper electrode on the oxide semiconductor layer, wherein the lower electrode. The carbon thin film, the oxide semiconductor layer, and the upper electrode are arranged in a direction perpendicular to the substrate.

公开(公告)号：US20230051857A1

公开(公告)日：2023-02-16

申请号：US17540662

申请日：2021-12-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kwanghee LEE ,  Sangwook KIM ,  Euntae KIM ,  Jeeeun YANG ,  Moonil JUNG ,  Sangjun HONG

IPC: H01L29/786 ,  H01L29/417

Abstract: Provided are oxide semiconductor transistors. The oxide semiconductor transistor includes a substrate, a channel layer arranged on the substrate and having a flat plate shape extending along one plane, a gate electrode facing a part of the channel layer, and a source region and a drain region separated from each other with the gate electrode therebetween, wherein the source region contacts three or more surfaces of the channel layer, and the drain region contacts three or more surfaces of the channel layer.