公开(公告)号：US11768656B2

公开(公告)日：2023-09-26

申请号：US17248861

申请日：2021-02-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Wookwang Lee ,  Kyounghoon Kim ,  Hyungsik Park ,  Dongrak Shin ,  Youngjung Yoon ,  Jaejin Lee

IPC: G06F3/16 ,  H04R3/00 ,  G06F13/42

CPC classification number: G06F3/162 ,  G06F3/165 ,  G06F13/4282 ,  H04R3/00 ,  G06F2213/0042 ,  H04R2420/05 ,  H04R2420/09

Abstract: Embodiments of an electronic device are disclosed. The electronic device may include a USB Type-C connector including at least one configuration channel (CC) pin and a processor operatively connected to the USB Type-C connector. The processor may be configured to: obtain first information of a connected audio output device by using a USB driver; transmit the first information and/or audio card information of the audio output device to an audio framework through a USB framework; control the audio framework to access an interface corresponding to the audio card information; and activate, when at least a portion of second information of the audio output device is obtained through the USB driver while accessing the interface, the interface by transmitting the at least a portion of the second information to the audio framework through the USB framework. Various additional embodiments in addition to the disclosed embodiments are possible.

公开(公告)号：USD954368S1

公开(公告)日：2022-06-07

申请号：US29750889

申请日：2020-09-17

Applicant: Samsung Electronics Co., Ltd.

Designer： Jinsook Park ,  Jaejin Lee ,  Sodam Park ,  Sanghoon Yoon ,  Deoksang Yun

公开(公告)号：US10347527B2

公开(公告)日：2019-07-09

申请号：US15975003

申请日：2018-05-09

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sangho Rha ,  Kyoung Hee Nam ,  Jeonggil Lee ,  Hyunseok Lim ,  Seungjong Park ,  Seulgi Bae ,  Jaejin Lee ,  Kwangtae Hwang

IPC: H01L21/768 ,  H01L23/532

Abstract: A semiconductor device includes a substrate, a first metal interconnection provided on a first region of the substrate, and a second metal interconnection provided on a second region of the substrate. A width of the second metal interconnection is greater than a width of the first metal interconnection. The first metal interconnection includes a metal pattern. The second metal interconnection includes a lower metal pattern having a concave surface at its top, an upper metal pattern disposed on the concave surface at the top of the lower metal pattern, and a first barrier pattern interposed between the lower metal pattern and the upper metal pattern. The metal interconnections are formed by a damascene process including deposition, reflow, metal implantation, and planarization processes.

公开(公告)号：US12204812B2

公开(公告)日：2025-01-21

申请号：US18243431

申请日：2023-09-07

Applicant: Samsung Electronics Co., Ltd.

Inventor： Wookwang Lee ,  Kyounghoon Kim ,  Hyungsik Park ,  Dongrak Shin ,  Youngjung Yoon ,  Jaejin Lee

IPC: G06F3/16 ,  G06F13/42 ,  H04R3/00

Abstract: Embodiments of an electronic device are disclosed. The electronic device may include a USB Type-C connector including at least one configuration channel (CC) pin and a processor operatively connected to the USB Type-C connector. The processor may be configured to: obtain first information of a connected audio output device by using a USB driver; transmit the first information and/or audio card information of the audio output device to an audio framework through a USB framework; control the audio framework to access an interface corresponding to the audio card information; and activate, when at least a portion of second information of the audio output device is obtained through the USB driver while accessing the interface, the interface by transmitting the at least a portion of the second information to the audio framework through the USB framework. Various additional embodiments in addition to the disclosed embodiments are possible.

公开(公告)号：US20230063527A1

公开(公告)日：2023-03-02

申请号：US17747238

申请日：2022-05-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jaejin Lee ,  Youngjun Kim ,  Hunyoung Bark ,  Taekyung Yoon ,  Eunok Lee

IPC: H01L29/49 ,  H01L27/108

Abstract: A gate structure includes a first gate electrode including a metal, a gate barrier pattern on the first gate electrode and including a metal nitride, and a second gate electrode on the gate barrier pattern. The gate structure is buried in an upper portion of a substrate. The gate barrier pattern has a flat upper surface and an uneven lower surface.

公开(公告)号：US11359856B2

公开(公告)日：2022-06-14

申请号：US16876685

申请日：2020-05-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Chanbin Park ,  Yang-Yeol Gu ,  Jaejin Lee ,  Jeonghyun Lee

IPC: F25D23/02 ,  E05B65/00

Abstract: A refrigerator with an enhanced door includes a main body including a storeroom, first and second doors pivotally coupled to the main body to open or close the storeroom and a pivot bar pivotally installed at the first door. The pivot bar is movable between a first position between the first and second doors and a second position pivoted toward the first door to prevent cold air leaks from the storeroom. A locking device separably locks the pivot bar to the first door when the pivot bar is in the second position.

公开(公告)号：USD937507S1

公开(公告)日：2021-11-30

申请号：US29769805

申请日：2021-02-08

Applicant: Samsung Electronics Co., Ltd.

Designer： Jaejin Lee ,  Jinsook Park

公开(公告)号：USD917804S1

公开(公告)日：2021-04-27

申请号：US29724639

申请日：2020-02-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Designer： Jinsook Park ,  Sodam Park ,  Jaejin Lee ,  Deoksang Yun

公开(公告)号：USD854764S1

公开(公告)日：2019-07-23

申请号：US29622050

申请日：2017-10-13

Applicant: Samsung Electronics Co., Ltd.

Designer： Yuna Park ,  Sanghun Yoon ,  Jaejin Lee

公开(公告)号：US09997400B2

公开(公告)日：2018-06-12

申请号：US15332297

申请日：2016-10-24

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sangho Rha ,  Kyoung Hee Nam ,  Jeonggil Lee ,  Hyunseok Lim ,  Seungjong Park ,  Seulgi Bae ,  Jaejin Lee ,  Kwangtae Hwang

IPC: H01L21/768

CPC classification number: H01L21/76816 ,  H01L21/7684 ,  H01L21/76847 ,  H01L21/76849 ,  H01L21/76864 ,  H01L21/76867 ,  H01L21/76882 ,  H01L23/53238

Abstract: A semiconductor device includes a substrate, a first metal interconnection provided on a first region of the substrate, and a second metal interconnection provided on a second region of the substrate. A width of the second metal interconnection is greater than a width of the first metal interconnection. The first metal interconnection includes a metal pattern. The second metal interconnection includes a lower metal pattern having a concave surface at its top, an upper metal pattern disposed on the concave surface at the top of the lower metal pattern, and a first barrier pattern interposed between the lower metal pattern and the upper metal pattern. The metal interconnections are formed by a damascene process including deposition, reflow, metal implantation, and planarization processes.