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公开(公告)号：US12183803B2
公开(公告)日：2024-12-31
申请号：US17747238
申请日：2022-05-18
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Jaejin Lee , Youngjun Kim , Hunyoung Bark , Taekyung Yoon , Eunok Lee
Abstract: A gate structure includes a first gate electrode including a metal, a gate barrier pattern on the first gate electrode and including a metal nitride, and a second gate electrode on the gate barrier pattern. The gate structure is buried in an upper portion of a substrate. The gate barrier pattern has a flat upper surface and an uneven lower surface.
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公开(公告)号：US20230063527A1
公开(公告)日：2023-03-02
申请号：US17747238
申请日：2022-05-18
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Jaejin Lee , Youngjun Kim , Hunyoung Bark , Taekyung Yoon , Eunok Lee
IPC: H01L29/49 , H01L27/108
Abstract: A gate structure includes a first gate electrode including a metal, a gate barrier pattern on the first gate electrode and including a metal nitride, and a second gate electrode on the gate barrier pattern. The gate structure is buried in an upper portion of a substrate. The gate barrier pattern has a flat upper surface and an uneven lower surface.
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