公开(公告)号：US10211156B2

公开(公告)日：2019-02-19

申请号：US16119475

申请日：2018-08-31

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Changseop Yoon ,  Kwangsub Yoon ,  Jongmil Youn ,  Hyung Jong Lee

IPC: H01L23/528 ,  H01L21/8238 ,  H01L27/02 ,  H01L23/485 ,  H01L29/06

Abstract: A semiconductor device includes a substrate including PMOSFET and NMOSFET regions, a first gate structure extending in a first direction and crossing the PMOSFET and NMOSFET regions, and a gate contact on and connected to the first gate structure, the gate contact being between the PMOSFET and NMOSFET regions, the gate contact including a first sub contact in contact with a top surface of the first gate structure, the first sub contact including a vertical extending portion extending vertically toward the substrate along one sidewall of the first gate structure, and a second sub contact spaced apart from the first gate structure, a top surface of the second sub contact being positioned at a same level as a top surface of the first sub contact.

公开(公告)号：US10431586B2

公开(公告)日：2019-10-01

申请号：US16244540

申请日：2019-01-10

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Changseop Yoon ,  Sungmin Kim ,  Chiwon Cho

IPC: H01L27/092 ,  H01L23/485 ,  H01L29/417 ,  H01L21/8238 ,  H01L29/06 ,  H01L27/11 ,  H01L27/088 ,  H01L27/02 ,  H01L29/66 ,  H01L29/165 ,  H01L21/8234

Abstract: A semiconductor device including a first fin active area substantially parallel to a second fin active area, a first source/drain in the first fin active area, a second source/drain in the second fin active area, a first contact plug on the first source/drain, and a second contact plug on the second source/drain. The center of the second contact plug is offset from the center of the second source/drain.

公开(公告)号：US10109645B2

公开(公告)日：2018-10-23

申请号：US15786864

申请日：2017-10-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Changseop Yoon ,  Junggun You ,  YoungJoon Park ,  Jeonghyo Lee

IPC: H01L21/70 ,  H01L21/336 ,  H01L27/118 ,  H01L29/423 ,  H01L29/66 ,  H01L21/762 ,  H01L29/78 ,  H01L29/06

Abstract: A semiconductor device includes a first device isolation layer defining active regions spaced apart from each other along a first direction on a substrate, second device isolation layers defining a plurality of active patterns protruding from the substrate, the second device isolation layers extending in the first direction to be spaced apart from each other in a second direction and connected to the first device isolation layer, a gate structure extending in the second direction on the first device isolation layer between the active regions, a top surface of the second device isolation layer being lower than a top surface of the active pattern, a top surface of the first device isolation layer being higher than the top surface of the active pattern, and at least part of a bottom surface of the gate structure being higher than the top surface of the active pattern.

公开(公告)号：US10096546B2

公开(公告)日：2018-10-09

申请号：US15704049

申请日：2017-09-14

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Changseop Yoon ,  Kwangsub Yoon ,  Jongmil Youn ,  Hyung Jong Lee

IPC: H01L23/528 ,  H01L21/8238 ,  H01L29/06 ,  H01L27/02 ,  H01L23/485

Abstract: A semiconductor device includes a substrate including PMOSFET and NMOSFET regions, a first gate structure extending in a first direction and crossing the PMOSFET and NMOSFET regions, and a gate contact on and connected to the first gate structure, the gate contact being between the PMOSFET and NMOSFET regions, the gate contact including a first sub contact in contact with a top surface of the first gate structure, the first sub contact including a vertical extending portion extending vertically toward the substrate along one sidewall of the first gate structure, and a second sub contact spaced apart from the first gate structure, a top surface of the second sub contact being positioned at a same level as a top surface of the first sub contact.

公开(公告)号：US09799674B2

公开(公告)日：2017-10-24

申请号：US15050607

申请日：2016-02-23

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Changseop Yoon ,  Junggun You ,  YoungJoon Park ,  Jeonghyo Lee

IPC: H01L21/70 ,  H01L21/336 ,  H01L27/118 ,  H01L29/78 ,  H01L29/423 ,  H01L29/66 ,  H01L29/06 ,  H01L21/762

CPC classification number: H01L29/7846 ,  H01L21/76224 ,  H01L27/11807 ,  H01L29/0653 ,  H01L29/0673 ,  H01L29/4236 ,  H01L29/42376 ,  H01L29/66621 ,  H01L29/66659

Abstract: A semiconductor device includes a first device isolation layer defining active regions spaced apart from each other along a first direction on a substrate, second device isolation layers defining a plurality of active patterns protruding from the substrate, the second device isolation layers extending in the first direction to be spaced apart from each other in a second direction and connected to the first device isolation layer, a gate structure extending in the second direction on the first device isolation layer between the active regions, a top surface of the second device isolation layer being lower than a top surface of the active pattern, a top surface of the first device isolation layer being higher than the top surface of the active pattern, and at least part of a bottom surface of the gate structure being higher than the top surface of the active pattern.

公开(公告)号：US09748243B2

公开(公告)日：2017-08-29

申请号：US15049721

申请日：2016-02-22

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Changseop Yoon ,  Sungmin Kim ,  Chiwon Cho

IPC: H01L21/70 ,  H01L27/092 ,  H01L27/088 ,  H01L29/66 ,  H01L29/06 ,  H01L23/485 ,  H01L29/165

CPC classification number: H01L27/0924 ,  H01L21/823431 ,  H01L21/823475 ,  H01L21/823821 ,  H01L21/823871 ,  H01L23/485 ,  H01L27/0207 ,  H01L27/0886 ,  H01L27/1104 ,  H01L29/0653 ,  H01L29/165 ,  H01L29/41791 ,  H01L29/665

Abstract: A semiconductor device including a first fin active area substantially parallel to a second fin active area, a first source/drain in the first fin active area, a second source/drain in the second fin active area, a first contact plug on the first source/drain, and a second contact plug on the second source/drain. The center of the second contact plug is offset from the center of the second source/drain.