公开(公告)号：US09892815B2

公开(公告)日：2018-02-13

申请号：US15275538

申请日：2016-09-26

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Se Yun Kim ,  Jong Wook Roh ,  Woojin Lee ,  Jongmin Lee ,  Doh Won Jung ,  Sungwoo Hwang ,  Chan Kwak

IPC: B32B3/00 ,  H01B1/08 ,  H01B1/16 ,  H01B5/14 ,  H01B13/00 ,  H01B1/00 ,  G06F3/041

CPC classification number: H01B1/08 ,  G06F3/041 ,  G06F2203/04102 ,  G06F2203/04103 ,  H01B1/00 ,  H01B1/16 ,  H01B5/14 ,  H01B13/0036

Abstract: An electrical conductor including a first conductive layer including a plurality of ruthenium oxide nanosheets, wherein the plurality of ruthenium oxide nanosheets include an electrical connection between contacting ruthenium oxide nanosheets and at least one of the plurality of ruthenium oxide nanosheets includes a plurality of metal clusters on a surface of the at least one ruthenium oxide nanosheet.

公开(公告)号：US11858829B2

公开(公告)日：2024-01-02

申请号：US16819571

申请日：2020-03-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Giyoung Jo ,  Chan Kwak ,  Hyungjun Kim ,  Euncheol Do ,  Hyeoncheol Park ,  Changsoo Lee

IPC: C01G33/00 ,  C01G31/00 ,  C01G35/00 ,  C04B35/645 ,  H01L49/02 ,  C04B35/626 ,  H10B12/00

CPC classification number: C01G33/006 ,  C04B35/6261 ,  C04B35/62695 ,  C04B35/645 ,  H01L28/40 ,  H10B12/37 ,  C01P2002/72 ,  C01P2002/76 ,  C01P2006/10 ,  C01P2006/40

Abstract: A ternary paraelectric having a Cc structure and a method of manufacturing the same are provided. The ternary paraelectric having a Cc structure includes a material having a chemical formula of A2B4O11 that has a monoclinic system, is a space group No. 9, and has a dielectric constant of 150 to 250, wherein “A” is a Group 1 element, and “B” is a Group 5 element. “A” may include one of Na, K, Li and Rb. “B” may include one of Nb, V, and Ta. The A2B4O11 material may be Na2Nb4O11 in which bandgap energy thereof is greater than that of STO. The A2B4O11 material may have relative density that is greater than 90% or more.

公开(公告)号：US11824081B2

公开(公告)日：2023-11-21

申请号：US17209762

申请日：2021-03-23

Applicant: Samsung Electronics Co., Ltd. ,  AJOU UNIVERSITY INDUSTRY-ACADEMIC COOPERATION FOUNDATION

Inventor： Changsoo Lee ,  Sangwoon Lee ,  Chan Kwak ,  Hyungjun Kim ,  Euncheol Do

IPC: H01L49/02 ,  H01L27/108 ,  C04B35/057 ,  C04B35/01 ,  C04B35/64 ,  C04B35/495 ,  H10B12/00

CPC classification number: H01L28/55 ,  C04B35/01 ,  C04B35/057 ,  C04B35/495 ,  C04B35/64 ,  H10B12/038 ,  H10B12/37

Abstract: Provided are a dielectric thin film, an integrated device including the same, and a method of manufacturing the dielectric thin film. The dielectric thin film includes an oxide having a perovskite-type crystal structure represented by Formula 1 below and wherein the dielectric thin film comprises 0.3 at % or less of halogen ions or sulfur ions.

A2-xB3-yO10-z  

In Formula 1, A, B, x, y, and z are disclosed in the specification.

公开(公告)号：US11763989B2

公开(公告)日：2023-09-19

申请号：US17038904

申请日：2020-09-30

Applicant: Samsung Electronics Co., Ltd. ,  National Institute for Materials Science

Inventor： Hyungjun Kim ,  Taniguchi Takaaki ,  Sasaki Takayoshi ,  Osada Minoru ,  Chan Kwak ,  Youngnam Kwon ,  Changsoo Lee

IPC: H01G4/12 ,  H01G4/005 ,  H01L49/02

CPC classification number: H01G4/1209 ,  H01G4/005 ,  H01L28/56

Abstract: Provided are a dielectric monolayer thin film, a capacitor and a semiconductor device each including the dielectric monolayer thin film, and a method of forming the dielectric monolayer thin film, the dielectric monolayer thin film including an oxide which is represented by Formula 1 and has a perovskite-type crystal structure, wherein the oxide has a surface chemically bonded with hydrogen.

A2Bn−3CnO3n+1  



wherein, in Formula 1, A is a divalent element,
B is a monovalent element,
C is a pentavalent element, and
n is a number from 3 to 8.

公开(公告)号：US11358904B2

公开(公告)日：2022-06-14

申请号：US15908193

申请日：2018-02-28

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jong Wook Roh ,  Daejin Yang ,  Doh Won Jung ,  Chan Kwak ,  Hyungjun Kim

IPC: C04B35/491 ,  C04B35/468 ,  C04B35/47 ,  C04B35/472 ,  H01G4/10 ,  C01G41/00 ,  C01G41/02 ,  C01G29/00 ,  C01G35/00 ,  C07C211/63 ,  C07C211/01 ,  H01C7/115 ,  C04B35/475 ,  H01G4/12 ,  C04B35/495 ,  H01C7/00

Abstract: A dielectric material, a method of manufacturing thereof, and a dielectric device and an electronic device including the same. A dielectric material includes a layered metal oxide including a first layer having a positive charge and a second layer having a negative charge which are laminated, a monolayer nanosheet exfoliated from the layered metal oxide, a nanosheet laminate of the monolayer nanosheets, or a combination thereof, wherein the dielectric material includes a two-dimensional layered material having a two-dimensional crystal structure and the two-dimensional layered material is represented by Chemical Formula 1.

公开(公告)号：US11120944B2

公开(公告)日：2021-09-14

申请号：US16169800

申请日：2018-10-24

Applicant: SAMSUNG ELECTRONICS CO., LTD. ,  NATIONAL INSTITUTE FOR MATERIALS SCIENCE

Inventor： Hyeon Cheol Park ,  Takayoshi Sasaki ,  Minoru Osada ,  Chan Kwak ,  Daejin Yang ,  Doh Won Jung ,  Youngjin Cho

IPC: H01G4/12 ,  H01G4/30 ,  H01G4/005 ,  H01G4/33

Abstract: A ceramic electronic component includes a pair of electrodes facing each other and a dielectric layer disposed between the pair of electrodes and including a plurality of ceramic nanosheets, where the plurality of ceramic nanosheets has a multimodal lateral size distribution expressed by at least two separated peaks, a method of manufacturing the same, and an electronic device including the ceramic electronic component.

公开(公告)号：US10658113B2

公开(公告)日：2020-05-19

申请号：US16203934

申请日：2018-11-29

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Doh Won Jung ,  Chan Kwak ,  Tae Won Jeong

IPC: H01G4/12 ,  C04B35/495 ,  H01G4/30

Abstract: Disclosed are a ceramic dielectric including a composite of a first dielectric and a second dielectric, wherein each of the first dielectric and the second dielectric includes strontium (Sr) and niobium (Nb) and has a different crystal system, a ceramic electronic component, and a device.

公开(公告)号：US10070522B2

公开(公告)日：2018-09-04

申请号：US15342308

申请日：2016-11-03

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Doh Won Jung ,  Se Yun Kim ,  Jong Wook Roh ,  Jongmin Lee ,  Sungwoo Hwang ,  Jinyoung Hwang ,  Chan Kwak

IPC: H05K1/09 ,  C01G55/00 ,  C09D1/00 ,  C09D5/24 ,  C09D7/40 ,  B82Y30/00 ,  B82Y40/00 ,  H05K1/02 ,  C08K3/22 ,  H05K3/28

Abstract: An electrical conductor includes a substrate; and a first conductive layer disposed on the substrate and including a plurality of metal oxide nanosheets, wherein adjacent metal oxide nanosheets of the plurality of metal oxide nanosheets contact to provide an electrically conductive path between the contacting metal oxide nanosheets, wherein the plurality of metal oxide nanosheets include an oxide of Re, V, Os, Ru, Ta, Ir, Nb, W, Ga, Mo, In, Cr, Rh, Mn, Co, Fe, or a combination thereof, and wherein the metal oxide nanosheets of the plurality of metal oxide nanosheets have an average lateral dimension of greater than or equal to about 1.1 micrometers.

公开(公告)号：US11946154B2

公开(公告)日：2024-04-02

申请号：US17126902

申请日：2020-12-18

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyungjun Kim ,  Chan Kwak ,  Takayoshi Sasaki ,  Yasuo Ebina ,  Changsoo Lee ,  Dohwon Jung ,  Giyoung Jo ,  Takaaki Taniguchi

IPC: C03C17/23 ,  C03C17/00 ,  C30B1/02

CPC classification number: C30B1/023 ,  C03C17/001 ,  C03C17/23 ,  C04B2235/3258 ,  C04B2235/768

Abstract: Provided are a dielectric material, a device including the dielectric material, and a method of preparing the dielectric material, in which the dielectric material may include: a layered perovskite compound, wherein the layered perovskite compound may include at least one selected from a Dion-Jacobson phase, an Aurivillius phase, and a Ruddlesden-Popper phase, a temperature coefficient of capacitance (TCC) of a capacitance at 200° C. with respect to a capacitance at 40° C. may be in a range of about −15 percent (%) to about 15%, and a permittivity of the dielectric material may be 200 or greater in a range of about 1 kilohertz (kHz) to about 1 megahertz (MHz).

公开(公告)号：US11024462B2

公开(公告)日：2021-06-01

申请号：US16837019

申请日：2020-04-01

Applicant: SAMSUNG ELECTRONICS CO., LTD. ,  NATIONAL INSTITUTE FOR MATERIALS SCIENCE

Inventor： Yoon Chui Son ,  Minoru Osada ,  Takayoshi Sasaki ,  Chan Kwak ,  Doh Won Jung ,  Youngjin Cho

IPC: H01G4/33 ,  H01G4/248 ,  H01G4/012 ,  H01G4/12 ,  H01C7/10 ,  H01C7/00 ,  H01G4/30

Abstract: A method of manufacturing a ceramic electronic component includes forming a dielectric layer including a plurality of ceramic nanosheets on a first electrode, treating the dielectric layer with an acid, and forming a second electrode on the dielectric layer, a ceramic electronic component, and an electronic device.