公开(公告)号：US20220384508A1

公开(公告)日：2022-12-01

申请号：US17703217

申请日：2022-03-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dongmin Keum ,  Taehan Kim ,  Bumsuk Kim ,  Junsung Park ,  Kwanghee Lee ,  Yunki Lee

IPC: H01L27/146 ,  H01L21/66 ,  H04N5/369 ,  H04N5/341

Abstract: A pixel array of an image sensor includes a plurality of pixel groups. Each pixel group includes a plurality of unit pixels adjacent to each other and respectively including photoelectric conversion elements disposed in a semiconductor substrate, a color filter shared by the plurality of unit pixels, and a plurality of microlenses disposed on the color filter and having sizes different from each other such that the plurality of microlenses respectively focus an incident light to the photoelectric conversion elements included in the plurality of unit pixels. Deviations of sensing sensitivity of unit pixels are reduced and quality of images captured by the image sensor is enhanced by adjusting sizes of microlenses.

公开(公告)号：US20220181372A1

公开(公告)日：2022-06-09

申请号：US17507374

申请日：2021-10-21

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Taesung LEE ,  Dongmin Keum ,  Bumsuk Kim ,  Jinho Kim ,  Junsung Park ,  Kwanghee Lee ,  Dongkyu Lee ,  Yunki Lee

IPC: H01L27/146 ,  H04N5/232

Abstract: An image sensor includes a normal pixel, a first auto-focus (AF) pixel, and a second AF pixel, each of the normal pixel, the first AF pixel and the second AF pixel including a photodiode. The image sensor further includes a normal microlens disposed on the normal pixel, and a first AF microlens disposed on the first AF pixel and the second AF pixel. The photodiode of the normal pixel, the photodiode of the first AF pixel, and the photodiode of the second AF pixel are respectively disposed in photo-detecting areas of a semiconductor substrate. A height of the first AF microlens in a vertical direction from a top surface of the semiconductor substrate is greater than a height of the normal microlens in the vertical direction from the top surface of the semiconductor substrate.

公开(公告)号：US11056523B2

公开(公告)日：2021-07-06

申请号：US16831928

申请日：2020-03-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jonghoon Park ,  Bumsuk Kim ,  Jung-Saeng Kim ,  Min Jang ,  Taesub Jung ,  Hyukjin Jung ,  Dongmin Keum ,  Changrok Moon

IPC: H01L27/32 ,  H01L27/146 ,  G06K9/00 ,  G06F21/32 ,  H04N5/374

Abstract: Optical sensors including a light-impeding pattern are provided. The optical sensors may include a plurality of photoelectric conversion regions, a plurality of lenses on the plurality of photoelectric conversion regions, and a light-impeding layer extending between the plurality of photoelectric conversion regions and the plurality of lenses. The light-impeding layer may include an opening between a first one of the plurality of photoelectric conversion regions and a first one of the plurality of lenses. The optical sensors may be configured to be assembled with a display panel such that the plurality of lenses are disposed between the light-impeding layer and the display panel.

公开(公告)号：US12302659B2

公开(公告)日：2025-05-13

申请号：US17402756

申请日：2021-08-16

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jonghoon Park ,  Bumsuk Kim ,  Yunki Lee ,  Bomi Kim ,  Kwanhee Lee ,  Yoongi Joung

IPC: H01L23/58 ,  H10F39/00 ,  H10F39/18 ,  H04N25/71 ,  H04N25/75 ,  H04N25/77

Abstract: A pixel array including: a plurality of pixel groups, each pixel group including: a plurality of unit pixels respectively including photoelectric conversion elements disposed in a semiconductor substrate; trench structures disposed in the semiconductor substrate and extending in a vertical direction from a first surface of the semiconductor substrate to a second surface of the semiconductor substrate to electrically and optically separate the photoelectric conversion elements from each other; and a microlens disposed above or below the semiconductor substrate, the microlens covering all of the photoelectric conversion elements in the plurality of unit pixels to focus an incident light to the photoelectric conversion elements.

公开(公告)号：US12288797B2

公开(公告)日：2025-04-29

申请号：US17710249

申请日：2022-03-31

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Junghyun Kim ,  Bumsuk Kim ,  Jonghoon Park ,  Hyungeun Yoo ,  Yun Ki Lee

IPC: H01L27/146 ,  H04N25/702

Abstract: An image sensor includes a substrate including pixel regions and having a first surface, a second surface opposite the first surface, and a first trench recessed from the first surface, a shallow device isolation pattern provided in the first trench, and a deep device isolation pattern between the pixel regions and provided in the substrate. The deep device isolation pattern includes a semiconductor pattern penetrating at least a portion of the substrate, and an isolation pattern provided between the substrate and the semiconductor pattern. The isolation pattern includes a first isolation pattern adjacent to the second surface, and a second isolation pattern adjacent to the first surface. A first interface at which the first isolation pattern contacts the second isolation pattern is spaced apart from the shallow device isolation pattern. The first isolation pattern includes a different material from that of the second isolation pattern.

公开(公告)号：US20250048757A1

公开(公告)日：2025-02-06

申请号：US18790612

申请日：2024-07-31

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyungeun Yoo ,  Dongmin Keum ,  Jung-Saeng Kim ,  Bumsuk Kim ,  Yun Ki Lee

IPC: H01L27/146 ,  H04N25/77 ,  H04N25/78

Abstract: An image sensor is provided. The image sensor image sensor includes: a first pixel group including a first pixel, a second pixel, a third pixel and a fourth pixel; a second pixel group including a fifth pixel, a sixth pixel, a seventh pixel and an eighth pixel, wherein the second pixel group is provided adjacent to the first pixel in a first direction; a first lens corresponding to the first pixel and the second pixel; a second lens corresponding to the third pixel and the fourth pixel; a device isolation pattern electrically isolating the first pixel group from the second pixel group; and a readout circuit configured to: output phase data based on at least a portion of phase signals received from the first pixel group; and output image data based on at least a portion of color signals received from the second pixel group.

公开(公告)号：US20240170522A1

公开(公告)日：2024-05-23

申请号：US18491204

申请日：2023-10-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Chulsoo Choi ,  Bumsuk Kim ,  Yun Ki Lee ,  Junghun Kim ,  Jonghoon Park

IPC: H01L27/146

CPC classification number: H01L27/1463 ,  H01L27/14621 ,  H01L27/14625 ,  H01L27/14636

Abstract: An image sensor includes a substrate having a first surface and a second surface which are opposite to each other, the substrate comprising a plurality of pixel regions arranged in a first direction and a second direction which are parallel to the first surface and intersect each other, a deep device isolation pattern extending into the substrate and between the plurality of pixel regions, and a color separating lens array on the second surface of the substrate. The color separating lens array includes a spacer layer on the second surface of the substrate, and a plurality of nano-posts horizontally spaced apart from each other on the spacer layer.

公开(公告)号：US20230040494A1

公开(公告)日：2023-02-09

申请号：US17815602

申请日：2022-07-28

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yun Ki Lee ,  Jonghoon Park ,  Bumsuk Kim ,  Junghyun Kim ,  Hyungeun Yoo ,  Yoongi Joung

IPC: H01L27/146

Abstract: A method of fabricating an image sensor includes forming a semiconductor substrate of a first conductivity type, forming a pixel isolation trench in in the semiconductor substrate to define pixel regions, forming a liner insulating layer in the pixel isolation trench, doping the liner insulating layer with dopants of a first conductivity type, forming a semiconductor layer on the liner insulating layer to fill the pixel isolation trench after the doping of the dopants, and performing a thermal treatment process on the semiconductor substrate.

公开(公告)号：US11031424B2

公开(公告)日：2021-06-08

申请号：US16400094

申请日：2019-05-01

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yun Ki Lee ,  Bumsuk Kim ,  Jonghoon Park ,  Junsung Park

IPC: H01L27/146 ,  H01L31/05 ,  H04N5/369 ,  H04N5/378 ,  H01L31/054

Abstract: An image sensor includes a photoelectric conversion layer including a plurality of first photoelectric conversion elements and a plurality of second photoelectric conversion elements adjacent to the first photoelectric conversion elements. A light shield layer shields the second photoelectric conversion elements and has respective openings therein that provide light transmission to respective ones of the first photoelectric conversion elements. The image sensor further includes an array of micro-lenses on the photoelectric conversion layer, each of the micro-lenses overlapping at least one of the first photoelectric conversion elements and at least one of the second photoelectric conversion elements.

公开(公告)号：US10382666B2

公开(公告)日：2019-08-13

申请号：US15903727

申请日：2018-02-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Bumsuk Kim ,  Jungchak Ahn

IPC: H04N5/232 ,  H04N5/369 ,  H01L27/146

Abstract: The inventive concepts provide an auto-focus image sensor and a digital image processing device including the same. The auto-focus image sensor includes a substrate including at least one first pixel used for detecting a phase difference and at least one second pixel used for detecting an image, a deep device isolation portion disposed in the substrate to isolate the first pixel from the second pixel, and a light shielding pattern disposed on the substrate of at least the first pixel. The amount of light incident on the first pixel is smaller than the amount of light incident on the second pixel by the light shielding pattern.