公开(公告)号：US20230361142A1

公开(公告)日：2023-11-09

申请号：US18170652

申请日：2023-02-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyeyeon PARK ,  Hyungkeun GWEON ,  Bumsuk KIM ,  Jieun KIM ,  Keo-Sung PARK ,  Yun Ki LEE ,  Hajin LIM ,  Taeksoo JEON ,  Jaesung HUR

IPC: H01L27/146

CPC classification number: H01L27/1463 ,  H01L27/14627 ,  H01L27/14636 ,  H01L27/14621

Abstract: Disclosed is an image sensor including a first substrate that has a first surface and a second surface opposite to the first substrate and including a pixel array region and an edge region, an antireflection structure on the second surface, a pixel separation part in the first substrate and separating pixels from each other, and a microlens array on the antireflection structure. The antireflection structure includes a first dielectric layer, a titanium oxide layer, a second dielectric layer, and a third dielectric layer that are sequentially stacked. The first dielectric layer, the second dielectric layer, and the third dielectric layer include different materials from each other. On the edge region, the third dielectric layer penetrates the second dielectric layer and the titanium oxide layer to contact with the first dielectric layer.

公开(公告)号：US20230122283A1

公开(公告)日：2023-04-20

申请号：US17812487

申请日：2022-07-14

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Taehan KIM ,  Yunki LEE ,  Dongmin KEUM ,  Bumsuk KIM ,  Kwanghee LEE ,  Yeaju JANG

IPC: H04N5/369 ,  H01L27/146 ,  H04N5/3745

Abstract: An image sensor includes a pixel array in which a plurality of normal pixels and a plurality of autofocus (AF) pixels are disposed, and a logic circuit. The logic circuit provides an autofocus function using a phase difference between pixel signals obtained from each of the plurality of AF pixels. Each of the AF pixels includes a single AF lens disposed on a pair of pixel areas. An AF lens of the AF pixel spaced apart from a center of the pixel array may have an area larger than an area of the AF lens of the AF pixel adjacent to the center.

公开(公告)号：US20230017043A1

公开(公告)日：2023-01-19

申请号：US17746042

申请日：2022-05-17

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyeyeon PARK ,  Yunki LEE ,  Jinwoong NAMGOONG ,  Hyunseok SONG ,  Hyungkeun GWEON ,  Bumsuk KIM

IPC: H01L27/146 ,  G02B5/20 ,  G02B3/00

Abstract: Provided is an image sensor including a light sensing element, a planarization layer disposed on the light sensing element, a color filter array layer disposed on the planarization layer, the color filter array layer including color filters, and a microlens disposed on the color filter array layer, wherein the color filters include a green filter, a blue filter and a red filter, and wherein a refractive index of the green filter is greater than 1.7 for a green light wavelength range of 500 nm to 570 nm.

公开(公告)号：US20220311944A1

公开(公告)日：2022-09-29

申请号：US17840750

申请日：2022-06-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： Bumsuk KIM ,  Jungchak AHN

IPC: H04N5/232 ,  H01L27/146 ,  H04N9/04 ,  H04N5/369

Abstract: The inventive concepts provide an auto-focus image sensor and a digital image processing device including the same. The auto-focus image sensor includes a substrate including at least one first pixel used for detecting a phase difference and at least one second pixel used for detecting an image, a deep device isolation portion disposed in the substrate to isolate the first pixel from the second pixel, and a light shielding pattern disposed on the substrate of at least the first pixel. The amount of light incident on the first pixel is smaller than the amount of light incident on the second pixel by the light shielding pattern.

公开(公告)号：US20220130876A1

公开(公告)日：2022-04-28

申请号：US17402756

申请日：2021-08-16

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jonghoon PARK ,  Bumsuk KIM ,  Yun LEE ,  Bomi L. KIM ,  Kwanhee LEE ,  Yeongi JOUNG

IPC: H01L27/146

Abstract: A pixel array including: a plurality of pixel groups, each pixel group including: a plurality of unit pixels respectively including photoelectric conversion elements disposed in a semiconductor substrate; trench structures disposed in the semiconductor substrate and extending in a vertical direction from a first surface of the semiconductor substrate to a second surface of the semiconductor substrate to electrically and optically separate the photoelectric conversion elements from each other; and a microlens disposed above or below the semiconductor substrate, the microlens covering all of the photoelectric conversion elements in the plurality of unit pixels to focus an incident light to the photoelectric conversion elements.