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    COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR IMAGE SENSORS
    3.
    发明申请
    COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR IMAGE SENSORS 审中-公开
    补充金属氧化物半导体图像传感器

    公开(公告)号：US20170040365A1

    公开(公告)日：2017-02-09

    申请号：US15298204

    申请日：2016-10-19

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Seungwook LEE ,  Jungchak AHN ,  Youngwoo JUNG

    IPC: H01L27/146 ,  H01L29/423

    CPC classification number: H01L27/14614 ,  H01L27/14603 ,  H01L27/14612 ,  H01L27/1463 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14641 ,  H01L27/14645 ,  H01L27/14689 ,  H01L29/4236

    Abstract: A complementary metal-oxide-semiconductor (CMOS) image sensor is provided. The CMOS image sensor may include an epitaxial layer having a first conductivity type and having first and second surfaces, a first device isolation layer extending from the first surface to the second surface to define first and second pixel regions, a well impurity layer of a second conductivity type formed adjacent to the first surface and formed in the epitaxial layer of each of the first and second pixel regions, and a second device isolation layer formed in the well impurity layer in each of the first and second pixel regions to define first and second active portions spaced apart from each other in each of the first and second pixel regions.

    Abstract translation: 提供了互补的金属氧化物半导体（CMOS）图像传感器。 CMOS图像传感器可以包括具有第一导电类型并具有第一和第二表面的外延层，从第一表面延伸到第二表面以限定第一和第二像素区域的第一器件隔离层，第二和第二表面的阱杂质层 导电类型，形成在第一表面附近并形成在第一和第二像素区域中的每一个的外延层中，以及第二器件隔离层，形成在第一和第二像素区域中的每一个中的阱杂质层中，以限定第一和第二像素区域 在第一和第二像素区域中的每一个中彼此间隔开的有源部分。

    IMAGE SENSOR HAVING CONVERSION DEVICE ISOLATION LAYER DISPOSED IN PHOTOELECTRIC CONVERSION DEVICE
    4.
    发明申请
    IMAGE SENSOR HAVING CONVERSION DEVICE ISOLATION LAYER DISPOSED IN PHOTOELECTRIC CONVERSION DEVICE 审中-公开
    具有转换装置隔离层的图像传感器在光电转换装置中处理

    公开(公告)号：US20170012066A1

    公开(公告)日：2017-01-12

    申请号：US15090989

    申请日：2016-04-05

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Hyuksoon CHOI ,  Jungchak AHN ,  Hyuk AN ,  Kyungho LEE

    IPC: H01L27/146

    CPC classification number: H01L27/1463 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1464 ,  H01L27/14645

    Abstract: An image sensor includes a first conductivity type first impurity region surrounded by a pixel isolation layer surrounds; a first conversion device isolation layer intersecting the first impurity region in a first direction; a second conductivity type second impurity region disposed on a first side surface of the first conversion device isolation layer; a second conductivity type third impurity region disposed on a second side surface of the first conversion device isolation layer opposite the first side surface; and a second conversion device isolation layer intersecting the first impurity region in a second direction perpendicular to the first direction. The second impurity region and the third impurity region are disposed inside the first impurity region.

    Abstract translation: 图像传感器包括由像素隔离层包围的第一导电类型的第一杂质区域; 在第一方向上与第一杂质区相交的第一转换器件隔离层; 第二导电类型的第二杂质区域，设置在第一转换器件隔离层的第一侧表面上; 第二导电类型的第三杂质区域，设置在与第一侧表面相对的第一转换器件隔离层的第二侧表面上; 以及在与第一方向垂直的第二方向上与第一杂质区交叉的第二转换器件隔离层。 第二杂质区域和第三杂质区域设置在第一杂质区域内。

    IMAGE SENSOR
    5.
    发明申请
    IMAGE SENSOR 有权
    图像传感器

    公开(公告)号：US20160225815A1

    公开(公告)日：2016-08-04

    申请号：US14973855

    申请日：2015-12-18

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Changyong UM ,  Youngwoo JUNG ,  Jungchak AHN

    IPC: H01L27/148 ,  H01L27/146

    CPC classification number: H01L27/14818 ,  H01L27/14609 ,  H01L27/1462 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/1464

    Abstract: An image sensor includes a substrate with a unit pixel defined by a first separation pattern, a photoelectric conversion part in the substrate, a photocharge storage in the substrate, the photocharge storage being adjacent to the photoelectric conversion part, a second separation pattern between the photoelectric conversion part and the photocharge storage, a shielding part on a bottom surface of the substrate to cover the photocharge storage, the shielding part including a first protrusion extending into the substrate and toward the first separation pattern, and an extension extending from the first protrusion to cover the bottom surface of the substrate; and an anti-reflection layer between the shielding part and the substrate, the anti-reflection layer having an overhang structure between the first protrusion and the extension.

    Abstract translation: 图像传感器包括具有由第一分离图案限定的单位像素的基板，基板中的光电转换部，基板中的光电荷存储部，与光电转换部相邻的光电荷存储部，光电转换部之间的第二分离图案 转换部分和光电荷存储器，覆盖光电荷存储器的基板的底表面上的屏蔽部分，所述屏蔽部分包括延伸到基板中并朝向第一分离图案的第一突起，以及从第一突起到第 覆盖基板的底面; 以及在所述屏蔽部和所述基板之间的防反射层，所述防反射层在所述第一突起和所述延伸部之间具有突出结构。

    IMAGE SENSORS
    6.
    发明申请
    IMAGE SENSORS 有权
    图像传感器

    公开(公告)号：US20160027821A1

    公开(公告)日：2016-01-28

    申请号：US14675915

    申请日：2015-04-01

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Jungchak AHN ,  Youngsun OH ,  Kyungho LEE ,  Dongyoung JANG

    IPC: H01L27/146

    CPC classification number: H01L27/1463 ,  H01L27/14603 ,  H01L27/14612 ,  H01L27/14627 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14643

    Abstract: An image sensor includes a substrate including a pixel region and a peripheral circuit region, and a first device isolation layer disposed in the substrate to define a plurality of unit pixels that are adjacent to each other in a first direction in the pixel region. Each of the plurality of unit pixels includes at least one light sensing element disposed in the substrate. The image sensor includes an interlayer insulating structure on the substrate, and a first blocking structure disposed on the first device isolation layer and penetrating the interlayer insulating structure. The first blocking structure is disposed between the plurality of unit pixels when viewed from a plan view. The first blocking structure extends in a second direction intersecting the first direction when viewed from a plan view.

    Abstract translation: 图像传感器包括：基板，包括像素区域和外围电路区域;以及第一器件隔离层，设置在所述基板中，以限定像素区域中沿着第一方向彼此相邻的多个单位像素。 多个单位像素中的每一个包括设置在基板中的至少一个感光元件。 图像传感器包括在基板上的层间绝缘结构，以及设置在第一器件隔离层上并穿透层间绝缘结构的第一阻挡结构。 当从平面图观察时，第一阻挡结构设置在多个单位像素之间。 当从俯视图观察时，第一阻挡结构沿与第一方向交叉的第二方向延伸。

    IMAGE SENSOR
    7.
    发明申请
    IMAGE SENSOR 有权

    公开(公告)号：US20250126917A1

    公开(公告)日：2025-04-17

    申请号：US18655714

    申请日：2024-05-06

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Jonghoon PARK ,  Junghyun KIM ,  Jungchak AHN ,  Yun Ki LEE ,  Junsik LEE

    IPC: H01L27/146

    Abstract: An image sensor includes a semiconductor substrate including a plurality of pixels, a first surface, and a second surface, opposing the first surface, and a device isolation layer in a trench penetrating through the first surface and the second surface of the semiconductor substrate and separating the pixels from each other. The device isolation layer may include a conductive separation layer extending from the first surface to the second surface, an insulating liner interposed between the conductive separation layer and the semiconductor substrate, and a capping separation layer extending in a direction from the second surface to the first surface and contacting the conductive separation layer.

    AUTO-FOCUS IMAGE SENSOR AND DIGITAL IMAGE PROCESSING DEVICE INCLUDING THE SAME
    8.
    发明申请
    AUTO-FOCUS IMAGE SENSOR AND DIGITAL IMAGE PROCESSING DEVICE INCLUDING THE SAME 有权

    公开(公告)号：US20220311944A1

    公开(公告)日：2022-09-29

    申请号：US17840750

    申请日：2022-06-15

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Bumsuk KIM ,  Jungchak AHN

    IPC: H04N5/232 ,  H01L27/146 ,  H04N9/04 ,  H04N5/369

    Abstract: The inventive concepts provide an auto-focus image sensor and a digital image processing device including the same. The auto-focus image sensor includes a substrate including at least one first pixel used for detecting a phase difference and at least one second pixel used for detecting an image, a deep device isolation portion disposed in the substrate to isolate the first pixel from the second pixel, and a light shielding pattern disposed on the substrate of at least the first pixel. The amount of light incident on the first pixel is smaller than the amount of light incident on the second pixel by the light shielding pattern.

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