公开(公告)号：US20210034234A1

公开(公告)日：2021-02-04

申请号：US16944656

申请日：2020-07-31

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seungwan WOO ,  Chulheon JEONG ,  Hyuksoon CHOI ,  Hyunseok YANG ,  Seunghoon KO ,  Sangheon KIM

IPC: G06F3/0488 ,  G06F3/041 ,  G06F3/0484

Abstract: An electronic device for processing an input and a method therefor are provided. The electronic device includes a cover window, a display disposed under the cover window, a touch panel including one or more touch sensing elements disposed in a region corresponding to the display, the touch panel configured to generate at least one of a touch signal or a proximity signal by using the one or more touch sensing elements, at least one processor operationally connected to the display and the touch panel, and a memory operationally connected to the at least one processor. The memory may store instructions which, when executed by the at least one processor, cause the at least one processor to, identify a first touch input in a first region on the cover window, corresponding to the display, by using the touch signal generated by the touch sensor, identify a first proximity input in a second region on the cover window, surrounding the display, by using the proximity signal generated by the touch sensor, determine whether a designated input determination condition is satisfied, based on the first touch input and the first proximity input, select one of the touch input in the first region corresponding to the display or the first proximity input in the second region surrounding the display, based on whether the designated input determination condition has been satisfied, and perform a function corresponding to the selected input.

公开(公告)号：US20170012066A1

公开(公告)日：2017-01-12

申请号：US15090989

申请日：2016-04-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyuksoon CHOI ,  Jungchak AHN ,  Hyuk AN ,  Kyungho LEE

IPC: H01L27/146

CPC classification number: H01L27/1463 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1464 ,  H01L27/14645

Abstract: An image sensor includes a first conductivity type first impurity region surrounded by a pixel isolation layer surrounds; a first conversion device isolation layer intersecting the first impurity region in a first direction; a second conductivity type second impurity region disposed on a first side surface of the first conversion device isolation layer; a second conductivity type third impurity region disposed on a second side surface of the first conversion device isolation layer opposite the first side surface; and a second conversion device isolation layer intersecting the first impurity region in a second direction perpendicular to the first direction. The second impurity region and the third impurity region are disposed inside the first impurity region.

Abstract translation: 图像传感器包括由像素隔离层包围的第一导电类型的第一杂质区域; 在第一方向上与第一杂质区相交的第一转换器件隔离层; 第二导电类型的第二杂质区域，设置在第一转换器件隔离层的第一侧表面上; 第二导电类型的第三杂质区域，设置在与第一侧表面相对的第一转换器件隔离层的第二侧表面上; 以及在与第一方向垂直的第二方向上与第一杂质区交叉的第二转换器件隔离层。 第二杂质区域和第三杂质区域设置在第一杂质区域内。

公开(公告)号：US20150333202A1

公开(公告)日：2015-11-19

申请号：US14711420

申请日：2015-05-13

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jihoon AHN ,  Yongwoo JEON ,  Jungwoo KIM ,  Haeseok PARK ,  Seungeon AHN ,  Seunghyup LEE ,  Myounghoon JUNG ,  Hyuksoon CHOI

IPC: H01L31/0352 ,  H01L31/0336 ,  H01L31/18 ,  H01L31/105

CPC classification number: H01L31/0336 ,  H01L27/14601 ,  H01L27/14643 ,  H01L31/0352 ,  H01L31/035281 ,  H01L31/03529 ,  H01L31/105 ,  H01L31/18 ,  H01L31/184 ,  H01L31/1852 ,  Y02E10/544 ,  Y02P70/521

Abstract: Example embodiments relate to a lateral type photodiode including a substrate, an insulation mask layer formed on the substrate, and a first type semiconductor layer, an active layer, and a second type semiconductor layer that contact a surface of the insulation mask layer and that are sequentially disposed in a direction substantially parallel to the surface of the insulation mask layer. The insulation mask layer includes a through hole, and the first type semiconductor layer, the active layer, and the second type semiconductor layer are sequentially formed from the through hole by using a lateral overgrowth method.

Abstract translation: 示例性实施例涉及包括衬底，形成在衬底上的绝缘掩模层和与绝缘掩模层的表面接触的第一类型半导体层，有源层和第二类型半导体层的横向型光电二极管， 依次设置在与绝缘掩模层的表面基本平行的方向上。 绝缘掩模层包括通孔，并且通过使用横向过度生长法从通孔顺序地形成第一类型半导体层，有源层和第二类型半导体层。