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    WIRELESS COMMUNICATION METHOD AND ELECTRONIC DEVICE FOR PROVIDING SAME
    13.
    发明申请
    WIRELESS COMMUNICATION METHOD AND ELECTRONIC DEVICE FOR PROVIDING SAME 审中-公开

    公开(公告)号：US20180338336A1

    公开(公告)日：2018-11-22

    申请号：US15775106

    申请日：2016-11-09

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Jungkuk SEO ,  Jaecheol KWON ,  Yukyung KIM ,  Seungyun SONG ,  Seungjae LEE ,  Jongmu CHOI ,  Sungjun KIM ,  Janghoon LEE ,  Yeunwook LIM

    IPC: H04W76/10 ,  H04W72/04 ,  H04W8/26

    Abstract: The present invention may include an electronic device comprising: a communication module for supporting first short-range wireless communication and second short-range wireless communication; and a processor which is functionally connected to the communication module, wherein the processor is configured to: establish a connection to a first external device over at least one channel in a band through the communication module, using the first short-range wireless communication; while the connection to the first external device is established, identify a request for performing the second short-range wireless communication with a second external device; and connect the second external device to the first external device or an external communication server over the at least one channel in the band, using the second short-range wireless communication, in response to the request. However, the present invention is not limited to the above-described embodiment, and may include other embodiments.

    INTEGRATED CIRCUIT DEVICE INCLUDING A DIODE
    17.
    发明申请
    INTEGRATED CIRCUIT DEVICE INCLUDING A DIODE 有权

    公开(公告)号：US20250056897A1

    公开(公告)日：2025-02-13

    申请号：US18794027

    申请日：2024-08-05

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Duckseoung KANG ,  Sangdeok KWON ,  Gibum KIM ,  Seungjae LEE

    IPC: H01L27/02 ,  H01L27/06 ,  H01L29/06 ,  H01L29/78 ,  H01L29/861

    Abstract: An integrated circuit device includes: a substrate including a first surface and a second surface that is opposite to the first surface; and a diode structure including: an upper semiconductor layer disposed on the first surface of the substrate and including a first dopant of a first conductivity type; a lower semiconductor layer disposed on the second surface of the substrate and including a second dopant of a second conductivity type that is different from the first conductivity type; and a first well region provided in a portion of the substrate that is between the upper semiconductor layer and the lower semiconductor layer, wherein the first well region is in contact with the upper semiconductor layer or the lower semiconductor layer.

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