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    DISPLAY APPARATUS AND METHOD OF MANUFACTURING THE SAME
    12.
    发明申请
    DISPLAY APPARATUS AND METHOD OF MANUFACTURING THE SAME 有权

    公开(公告)号：US20220069021A1

    公开(公告)日：2022-03-03

    申请号：US17401368

    申请日：2021-08-13

    Applicant: Samsung Display Co., Ltd.

    Inventor： Jaybum Kim ,  Myeongho Kim ,  Yeonhong Kim ,  Kyoungseok Son ,  Sunhee Lee ,  Seungjun Lee ,  Seunghun Lee

    IPC: H01L27/32 ,  H01L51/52 ,  H01L51/56

    Abstract: A display apparatus includes a substrate including a transmission area having a first through hole, a display area surrounding the transmission area, and a middle area disposed between the transmission area and the display area, a pixel circuit disposed on the display area, the pixel circuit including a first thin film transistor including a first semiconductor layer having polycrystalline silicon, and a second thin film transistor including a second semiconductor layer including an oxide semiconductor, a display element including a pixel electrode electrically connected to the pixel circuit, an opposite electrode disposed on the pixel electrode, and an intermediate layer disposed between the pixel electrode and the opposite electrode and including an emission layer, and a groove disposed in the middle area while surrounding the first through hole.

    Display device
    16.
    发明授权
    Display device 有权

    公开(公告)号：US11158697B2

    公开(公告)日：2021-10-26

    申请号：US16706597

    申请日：2019-12-06

    Applicant: Samsung Display Co., Ltd.

    Inventor： Jin Woo Lee ,  Jintaek Kim ,  Yeonhong Kim ,  Pilsuk Lee

    IPC: H01L29/12 ,  H01L27/32 ,  H01L51/00

    Abstract: A display device includes: a substrate; a buffer layer on the substrate; a first active pattern and a second active pattern on the buffer layer and spaced apart from each other; a first gate insulation layer on the first active pattern and the second active pattern; a first gate electrode and a second gate electrode on the first gate insulation layer, the first gate electrode and the second gate electrode respectively overlapping the first active pattern and the second active pattern; a second gate insulation layer on the first gate electrode and the second gate electrode; and a capacitor electrode on the second gate insulation layer, the capacitor electrode overlapping the first gate electrode, wherein a permittivity of the first gate insulation layer is greater than a permittivity of the buffer layer.

    Semiconductor device and a display device including the same
    17.
    发明授权
    Semiconductor device and a display device including the same 有权

    公开(公告)号：US10153336B2

    公开(公告)日：2018-12-11

    申请号：US15583244

    申请日：2017-05-01

    Applicant: SAMSUNG DISPLAY CO., LTD.

    Inventor： Waljun Kim ,  Yeonhong Kim ,  Junghyun Kim ,  Taejin Kim ,  Kiwan Ahn ,  Yongjae Jang

    IPC: H01L29/08 ,  H01L29/18 ,  H01L21/00 ,  H01L27/32 ,  H01L27/12

    Abstract: A semiconductor device including a semiconductor layer, a first electrode, and a second electrode. The semiconductor layer includes a first source region, a first drain region, a second source region, and a second drain region connected to a channel region. The first gate electrode is disposed below the semiconductor layer. The first gate electrode is insulated from the semiconductor layer. The first gate electrode at least partially overlaps the shared channel region. The second gate electrode is disposed above the semiconductor layer. The second gate electrode is insulated by a second gate insulating layer. The second gate electrode at least partially overlaps the channel region.

    Display apparatus
    19.
    发明授权
    Display apparatus 有权

    公开(公告)号：US12284883B2

    公开(公告)日：2025-04-22

    申请号：US18460345

    申请日：2023-09-01

    Applicant: SAMSUNG DISPLAY CO., LTD.

    Inventor： Eunhyun Kim ,  Eunhye Ko ,  Yeonhong Kim ,  Kyoungwon Lee ,  Sunhee Lee ,  Junhyung Lim

    IPC: H10K59/126 ,  H10K59/131 ,  H10K77/10 ,  H10K102/00

    Abstract: A display apparatus in which an area of a peripheral area may be reduced while having a simple structure, the display apparatus includes a substrate, a bottom metal layer on the substrate and including a first extension line extending from the peripheral area outside a display area into the display area, a semiconductor layer on the bottom metal layer, a gate layer on the semiconductor layer, a first metal layer on the gate layer, and a second metal layer on the first metal layer and including a first data line extending from the peripheral area into the display area and electrically coupled to the first extension line in the peripheral area.

    DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME
    20.
    发明公开
    DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME 审中-公开

    公开(公告)号：US20240321895A1

    公开(公告)日：2024-09-26

    申请号：US18528823

    申请日：2023-12-05

    Applicant: Samsung Display Co., Ltd.

    Inventor： Yeonhong Kim ,  Jongbeom Ko ,  Eunhyun Kim ,  Junghoon Lee ,  Sunhee Lee

    IPC: H01L27/12

    CPC classification number: H01L27/1218 ,  H01L27/1237 ,  H10K59/1201 ,  H10K59/1213 ,  H10K2102/351

    Abstract: A display device includes a substrate, a first oxide semiconductor layer on the substrate, a first gate insulating layer on the substrate and covering an upper surface of the first oxide semiconductor layer, a second oxide semiconductor layer on the first gate insulating layer, and a second gate insulating layer covering an upper surface of the second oxide semiconductor layer. The first oxide semiconductor layer includes a channel region between a source region and a drain region The second oxide semiconductor layer includes a channel region between a source region and a drain region. A difference between a thickness of the first gate insulating layer and a thickness of the second gate insulating layer is 500 Å or less.

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