DISPLAY APPARATUS AND METHOD OF MANUFACTURING THE SAME

    公开(公告)号:US20240224619A1

    公开(公告)日:2024-07-04

    申请号:US18506623

    申请日:2023-11-10

    CPC classification number: H10K59/123 H10K59/1201 H10K59/131 H10K2102/311

    Abstract: A display apparatus includes a substrate having a display area in which display elements are arranged, a first thin-film transistor in the display area and including a first semiconductor layer and a first gate electrode, the first semiconductor layer including an oxide semiconductor and the first gate electrode being insulated from the first semiconductor layer, and a first interlayer insulating layer between the first semiconductor layer and the first gate electrode, wherein the first interlayer insulating layer on the first semiconductor layer has a first length in a first direction, wherein the first gate electrode on the first interlayer insulating layer has a second length in the first direction, and wherein the first length is greater than the second length.

    DISPLAY APPARATUS AND METHOD OF MANUFACTURING THE SAME

    公开(公告)号:US20220069021A1

    公开(公告)日:2022-03-03

    申请号:US17401368

    申请日:2021-08-13

    Abstract: A display apparatus includes a substrate including a transmission area having a first through hole, a display area surrounding the transmission area, and a middle area disposed between the transmission area and the display area, a pixel circuit disposed on the display area, the pixel circuit including a first thin film transistor including a first semiconductor layer having polycrystalline silicon, and a second thin film transistor including a second semiconductor layer including an oxide semiconductor, a display element including a pixel electrode electrically connected to the pixel circuit, an opposite electrode disposed on the pixel electrode, and an intermediate layer disposed between the pixel electrode and the opposite electrode and including an emission layer, and a groove disposed in the middle area while surrounding the first through hole.

    Display device and method of manufacturing the display device

    公开(公告)号:US12262598B2

    公开(公告)日:2025-03-25

    申请号:US18378656

    申请日:2023-10-11

    Abstract: A display device is disclosed that includes: a substrate comprising a display area and a component area including a transmission area; a first thin-film transistor comprising a first semiconductor layer and a first gate electrode, the first semiconductor layer including a silicon semiconductor; a first insulating layer covering the first gate electrode; a second thin-film transistor comprising a second semiconductor layer arranged on the first insulating layer and a second gate electrode, the second semiconductor layer including an oxide semiconductor; a second insulating layer covering the second gate electrode and having a transmission hole overlapping the transmission area; an intermediate insulating layer between the first insulating layer and the second insulating layer; a conductive pattern between the intermediate insulating layer and the first insulating layer; and a display element arranged on the second insulating layer, wherein the transmission hole exposes an upper surface of the intermediate insulating layer.

    Display panel
    7.
    发明授权

    公开(公告)号:US12183286B2

    公开(公告)日:2024-12-31

    申请号:US18482453

    申请日:2023-10-06

    Abstract: Provided is a display panel including a light-emitting element, and a pixel circuit electrically connected to the light-emitting element, and including a driving unit electrically connected to the light-emitting element, the driving unit including a first transistor including a first bottom electrode for receiving a first voltage, and a first semiconductor pattern including an oxide semiconductor above the first bottom electrode, and at least one diode including a second bottom electrode for receiving a second voltage at a same layer as the first bottom electrode, and a second semiconductor pattern above the second bottom electrode, at a same layer as the first semiconductor pattern, including an oxide semiconductor, and integrated with the first semiconductor pattern.

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