Abstract:
A display device includes a substrate including a display area and a non-display area, and pixels disposed in the display area. The pixels each include first electrodes, second electrodes spaced apart from the first electrodes, and light emitting elements disposed between the first electrodes and the second electrodes. The first electrodes each include a closed loop of a polygonal shape in some sections.
Abstract:
A display device includes a substrate including a display area and a non-display area, and pixels disposed in the display area. The pixels each include first electrodes, second electrodes spaced apart from the first electrodes, and light emitting elements disposed between the first electrodes and the second electrodes. The first electrodes each include a closed loop of a polygonal shape in some sections.
Abstract:
A light emitting diode display device including: an organic light emitting diode including an anode electrode; a first transistor for providing a current to the anode electrode of the organic light emitting diode; a second transistor for transmitting a voltage to a gate electrode of the first transistor; a first capacitor for storing the voltage transmitted to the gate electrode of the first transistor; and a second capacitor disposed between a first electrode of the second transistor and a data line, wherein the first electrode of the second transistor is directly connected to the anode electrode of the organic light emitting diode,
Abstract:
A light emitting diode display device including: an organic light emitting diode including an anode electrode; a first transistor for providing a current to the anode electrode of the organic light emitting diode; a second transistor for transmitting a voltage to a gate electrode of the first transistor; a first capacitor for storing the voltage transmitted to the gate electrode of the first transistor; and a second capacitor disposed between a first electrode of the second transistor and a data line, wherein the first electrode of the second transistor is directly connected to the anode electrode of the organic light emitting diode.
Abstract:
A display panel includes a base layer having a display area and a non-display area including a pad area; a plurality of transistors on the base layer; a first protective layer covering the plurality of transistors; a conductive layer on the first protective layer; a second protective layer over the conductive layer; a first electrode and a second electrode on the second protective layer, the first and second electrodes being spaced from each other; a plurality of light emitting elements between the first electrode and the second electrode; a first contact electrode on the first electrode, the first contact electrode being in contact with one end portion of the light emitting element, and a second contact electrode on the second electrode, the second contact electrode being in contact with the other end portion of the at least one light emitting element; and a first pad in the pad area.
Abstract:
A display device is provided. The display device includes: a substrate; a first electrode located on the substrate; a second electrode located between the substrate and the first electrode; a first light emitting element located on the same layer as the first electrode; and a contact electrode located on the first light emitting element, wherein one end of the first light emitting element contacts the first electrode, and the other end of the first light emitting element contacts the contact electrode.
Abstract:
A display device includes a first substrate including a plurality of unit light emitting areas; a first electrode and a second electrode in each of the unit light emitting areas of the first substrate; a first insulation layer exposing one region of each of the first electrode and the second electrode; a light emitting element on the first insulation layer and having a first end and a second end in a length direction; light conversion patterns adjacent to the light emitting element, covering a portion of an upper surface of the light emitting element, and exposing the first and second ends of the light emitting element; a first contact electrode on the first electrode and connecting the one region of the exposed first electrode and the first end of the light emitting element; and a second contact electrode on the second electrode.
Abstract:
A display device includes: a substrate; a buffer layer on the substrate; a first active pattern and a second active pattern on the buffer layer and spaced apart from each other; a first gate insulation layer on the first active pattern and the second active pattern; a first gate electrode and a second gate electrode on the first gate insulation layer, the first gate electrode and the second gate electrode respectively overlapping the first active pattern and the second active pattern; a second gate insulation layer on the first gate electrode and the second gate electrode; and a capacitor electrode on the second gate insulation layer, the capacitor electrode overlapping the first gate electrode, wherein a permittivity of the first gate insulation layer is greater than a permittivity of the buffer layer.
Abstract:
A light emitting diode display device including: an organic light emitting diode including an anode electrode; a first transistor for providing a current to the anode electrode of the organic light emitting diode; a second transistor for transmitting a voltage to a gate electrode of the first transistor; a first capacitor for storing the voltage transmitted to the gate electrode of the first transistor; and a second capacitor disposed between a first electrode of the second transistor and a data line, wherein the first electrode of the second transistor is directly connected to the anode electrode of the organic light emitting diode.
Abstract:
A method of manufacturing an organic light emitting display includes: patterning an amorphous silicon layer to form an amorphous silicon layer pattern; forming an insulating layer on the amorphous silicon layer pattern; forming a gate electrode on a part of the insulating layer which corresponds to the amorphous silicon layer pattern; forming a blocking film on the gate electrode and the insulating layer; doping an impurity in a part of the amorphous silicon layer pattern; annealing the amorphous silicon layer pattern on which the impurity is doped to form a semiconductor layer; removing the blocking film; etching the insulating layer using the gate electrode as a mask to form a gate insulating layer below the gate electrode; forming an interlayer insulating layer using an organic insulator on a buffer layer, the gate electrode, and the semiconductor layer.