公开(公告)号：US10020352B2

公开(公告)日：2018-07-10

申请号：US15210563

申请日：2016-07-14

Applicant: Samsung Display Co., Ltd.

Inventor： Yung-Bin Chung ,  Bo-Geon Jeon ,  Eun-Jeong Cho ,  Hye-Hyang Park ,  Sung-Hoon Yang ,  Woo-Seok Jeon ,  Joo-Hee Jeon ,  Chaun-Gi Choi

IPC: H01L27/14 ,  H01L27/32 ,  H01L51/52

CPC classification number: H01L27/3258 ,  H01L27/1218 ,  H01L27/1248 ,  H01L27/1255 ,  H01L27/326 ,  H01L27/3262 ,  H01L29/7869 ,  H01L51/5253

Abstract: A substrate structure may be used in a display device. The substrate structure may include a base substrate, a transistor, and a silicon oxynitride layer. The transistor may include a semiconductor member and a gate electrode and may overlap the base substrate. The silicon oxynitride layer may directly contact at least one of the base substrate, the semiconductor member, and the gate electrode and may include (and/or contain) a hydrogen atom set. A hydrogen concentration in the silicon oxynitride layer may be greater than or equal to 1.52 atomic percent.

公开(公告)号：US09035297B2

公开(公告)日：2015-05-19

申请号：US13931697

申请日：2013-06-28

Applicant: SAMSUNG CORNING PRECISION MATERIALS CO., LTD. ,  Samsung Display Co., Ltd.

Inventor： Jaewoo Park ,  Yoon Gyu Lee ,  Do-Hyun Kim ,  Dongjo Kim ,  Juok Park ,  Insung Sohn ,  Sangwon Yoon ,  Gunhyo Lee ,  Yongjin Lee ,  Woo-Seok Jeon

IPC: H01L29/10 ,  H01L29/12 ,  H01L29/786 ,  C23C14/34 ,  C23C14/08 ,  C23C14/00

CPC classification number: H01L29/78693 ,  C23C14/0036 ,  C23C14/086 ,  C23C14/3407 ,  C23C14/3414

Abstract: A thin-film transistor includes a metal electrode and a zinc oxide-based barrier film that blocks a material from diffusing out of the metal electrode. The zinc oxide-based barrier film is made of zinc oxide doped with indium oxide, the content of the indium oxide ranging, by weight, 1 to 50 percent of the zinc oxide-based barrier film. A zinc oxide-based sputtering target for deposition of a barrier film of a thin-film transistor is made of zinc oxide doped with indium oxide, the content of the indium oxide ranging, by weight, 1 to 50 percent of the zinc oxide-based sputtering target.

Abstract translation: 薄膜晶体管包括阻挡材料扩散出金属电极的金属电极和氧化锌基阻挡膜。 基于氧化锌的阻挡膜由掺杂有氧化铟的氧化锌制成，氧化铟的含量为氧化锌系阻挡膜的1〜50重量％。 用于沉积薄膜晶体管的阻挡膜的氧化锌基溅射靶由掺杂有氧化铟的氧化锌制成，氧化铟的含量为氧化锌基的1〜50重量％ 溅射靶。

公开(公告)号：US20140239295A1

公开(公告)日：2014-08-28

申请号：US14190722

申请日：2014-02-26

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Jae-Woo PARK ,  Dong-Jo Kim ,  Ju-Ok Park ,  In-Sung Sohn ,  Sang-Won Yoon ,  Gun-Hyo Lee ,  Yong-Jin Lee ,  Yoon-Gyu Lee ,  Do-Hyun Kim ,  Woo-Seok Jeon

IPC: H01L29/786 ,  C23C14/34

CPC classification number: H01L29/7869 ,  C23C14/3414

Abstract: Provided are a zinc oxide-based sputtering target, a method of preparing the same, and a thin film transistor including a barrier layer deposited by the zinc oxide-based sputtering target. The zinc oxide-based sputtering target includes a sintered body that is composed of zinc oxide in which indium oxide is doped in a range from about 1% w/w to about 50% w/w. A backing plate is coupled to a back of the sintered body. The backing plate supports the sintered body.

Abstract translation: 提供了一种基于氧化锌的溅射靶，其制备方法和包含由氧化锌基溅射靶沉积的势垒层的薄膜晶体管。 基于氧化锌的溅射靶包括由氧化锌组成的烧结体，其中氧化铟掺杂在约1％w / w至约50％w / w的范围内。 背板联接到烧结体的背面。 背板支撑烧结体。