公开(公告)号：US20200220021A1

公开(公告)日：2020-07-09

申请号：US16819496

申请日：2020-03-16

Applicant: Samsung Display Co., Ltd.

Inventor： Joonseok PARK ,  Jihun LIM ,  Myounghwa KIM ,  Taesang KIM ,  Yeonkeon MOON

IPC: H01L29/786 ,  H01L29/24 ,  H01L23/532 ,  H01L27/32 ,  H01L29/08 ,  H01L29/10 ,  H01L29/417 ,  H01L29/423

Abstract: A thin film transistor includes an active layer over a substrate, a gate electrode over the active layer, a gate line connected with the gate electrode, and a gate insulation film between the active layer and the gate electrode. The active layer includes a channel region overlapping the gate electrode, and a drain region and a source region on respective sides of the channel region. A length of a straight line connecting the drain region and the source region by a shortest distance may be greater than a width of the gate line parallel to the straight line.

公开(公告)号：US20200185473A1

公开(公告)日：2020-06-11

申请号：US16789107

申请日：2020-02-12

Applicant: Samsung Display Co., Ltd.

Inventor： Kyoungseok SON ,  Myounghwa KIM ,  Eoksu KIM ,  Taesang KIM ,  Masataka KANO

IPC: H01L27/32 ,  H01L51/00 ,  H01L51/52 ,  H01L51/50 ,  H01L27/12 ,  H01L51/56

Abstract: A method of fabricating a display panel may include forming an oxide semiconductor pattern on a base layer including a first region and a second region, etching first, second, and third insulating layers to form a first groove that overlaps the second region, forming electrodes on the third insulating layer, forming a fourth insulating layer on the third insulating layer to cover the electrodes, thermally treating the fourth insulating layer, forming an organic layer to cover the fourth insulating layer, and forming an organic light emitting diode on the organic layer.