Abstract:
A vapor deposition apparatus for forming a deposition layer on a substrate, the vapor deposition apparatus includes a supply unit configured to receive a first source gas, a reaction space connected to the supply unit, a plasma generator in the reaction space, a first injection unit configured to inject a deposition source material to the substrate, the deposition source material including the first source gas, and a filament unit in the reaction space, the filament unit being connected to a power source.
Abstract:
A deposition apparatus for performing a deposition process on a substrate includes: an injection unit including a plasma generating member which receives a raw material gas and converts the raw material gas to a deposition source material in a radical form; and a plasma processor disposed adjacent to the injection unit and facing a side of the injection unit, wherein the plasma processor performs a plasma process in a direction facing the substrate.
Abstract:
A vapor deposition apparatus includes a stage on which a substrate is mounted; a heater unit that is disposed at a side of the stage and includes a first heater and a second heater, wherein the first heater and the second heater are movable so that the first heater and the second heater are spaced apart from each other or are disposed adjacent to each other; and a nozzle unit that is disposed at a side opposite to the side at which the heater unit is disposed about the stage and includes one or more nozzles.
Abstract:
A vapor deposition apparatus for depositing thin films on a substrate includes a supply unit including a plurality of linear supply members configured to supply at least one gas; and a nozzle unit including a plurality of nozzle members connected to the plurality of supply members and configured to supply the at least one gas toward the substrate, wherein two adjacent nozzle members of the plurality of nozzle members are connected to at least one common supply member of the plurality of supply members.
Abstract:
A vapor deposition apparatus includes a first injection unit through which a first raw gas is injected in a first direction, and a first filter unit which is mounted in the first injection unit and includes a plurality of plates separated from one another in the first direction and disposed in parallel to one another, where holes are defined in each of the plurality of plates which is detachably coupled in the first filter unit.
Abstract:
A vapor deposition apparatus that includes a first region having a first injecting unit for injecting a first raw material and a second region having a second injecting unit for injecting a second raw material, wherein the second injecting unit comprises a plasma generation unit, wherein the plasma generation unit comprises a plasma generator, a corresponding surface surrounding the plasma generator, and a plasma generation space formed between the plasma generator and the corresponding surface, and wherein distances between the plasma generator and the corresponding surface periodically vary along an outer circumference of the plasma generator. In the vapor deposition apparatus, the quality of thin film is increased by forming stable volume plasma through set positions where the plasma is generated in the plasma generation space.
Abstract:
Provided is a vapor deposition apparatus including a first injection unit injecting a first raw gas in a first direction and a first filter unit mounted on the first injection unit. The first filter unit includes a plurality of plates separated from one another in the first direction and disposed in parallel to one another, each of the plurality of plates having holes therein, being detachably coupled with the first filter unit, and having the holes with sizes of horizontal cross-sections gradually increasing in a direction in which the first raw gas moves. Accordingly, a process efficiency of the vapor deposition apparatus may be enhanced.
Abstract:
A vapor deposition apparatus for providing a deposition film on a substrate, the vapor deposition apparatus includes a plurality of first nozzle parts which injects a first raw material toward the substrate; a plurality of second nozzle parts which is alternately disposed together with the plurality of first nozzle parts and injects a second raw material toward the substrate; a diffuser unit which distributes the second raw material to the plurality of second nozzle parts; and a supply unit which supplies the second raw material to the diffuser unit.
Abstract:
A vapor deposition apparatus for providing a deposition film on a substrate, the vapor deposition apparatus includes a plurality of first nozzle parts which injects a first raw material toward the substrate; a plurality of second nozzle parts which is alternately disposed together with the plurality of first nozzle parts and injects a second raw material toward the substrate; a diffuser unit which distributes the second raw material to the plurality of second nozzle parts; and a supply unit which supplies the second raw material to the diffuser unit.
Abstract:
Provided is a vapor deposition apparatus including: a plasma generator configured to change at least a portion of a first raw material gas into a radical form; a corresponding surface corresponding to the plasma generator; a reaction space between the plasma generator and the corresponding surface; and an insulating member separated from, and surrounding the plasma generator.