VAPOR DEPOSITION AND VAPOR DEPOSITION METHOD
    13.
    发明申请
    VAPOR DEPOSITION AND VAPOR DEPOSITION METHOD 审中-公开
    蒸气沉积和蒸发沉积方法

    公开(公告)号:US20150144062A1

    公开(公告)日:2015-05-28

    申请号:US14590491

    申请日:2015-01-06

    CPC classification number: C23C16/46 C23C16/45551 C23C16/45563 C23C16/4583

    Abstract: A vapor deposition apparatus includes a stage on which a substrate is mounted; a heater unit that is disposed at a side of the stage and includes a first heater and a second heater, wherein the first heater and the second heater are movable so that the first heater and the second heater are spaced apart from each other or are disposed adjacent to each other; and a nozzle unit that is disposed at a side opposite to the side at which the heater unit is disposed about the stage and includes one or more nozzles.

    Abstract translation: 蒸镀装置包括:载置基板的载物台; 加热器单元,其设置在所述台的一侧并且包括第一加热器和第二加热器,其中所述第一加热器和所述第二加热器可移动,使得所述第一加热器和所述第二加热器彼此间隔开或布置 相邻; 以及喷嘴单元,其设置在与所述加热器单元围绕所述台架配置的一侧相对的一侧,并且包括一个或多个喷嘴。

    VAPOR DEPOSITION APPARATUS, VAPOR DEPOSITION METHOD AND METHOD OF MANUFACTURING ORGANIC LIGHT EMITTING DISPLAY APPARATUS
    14.
    发明申请
    VAPOR DEPOSITION APPARATUS, VAPOR DEPOSITION METHOD AND METHOD OF MANUFACTURING ORGANIC LIGHT EMITTING DISPLAY APPARATUS 有权
    蒸气沉积装置,蒸气沉积方法及制造有机发光显示装置的方法

    公开(公告)号:US20150072453A1

    公开(公告)日:2015-03-12

    申请号:US14177180

    申请日:2014-02-10

    CPC classification number: C23C16/45551

    Abstract: A vapor deposition apparatus for depositing thin films on a substrate includes a supply unit including a plurality of linear supply members configured to supply at least one gas; and a nozzle unit including a plurality of nozzle members connected to the plurality of supply members and configured to supply the at least one gas toward the substrate, wherein two adjacent nozzle members of the plurality of nozzle members are connected to at least one common supply member of the plurality of supply members.

    Abstract translation: 一种用于在衬底上沉积薄膜的气相沉积设备包括:供给单元,包括多个线性供应构件,其被构造成供应至少一种气体; 以及喷嘴单元,其包括连接到所述多个供应构件并被配置为朝向所述基板供应所述至少一种气体的多个喷嘴构件,其中所述多个喷嘴构件中的两个相邻的喷嘴构件连接到至少一个共同的供应构件 的多个供应构件。

    VAPOR DEPOSITION APPARATUS
    15.
    发明申请
    VAPOR DEPOSITION APPARATUS 审中-公开
    蒸气沉积装置

    公开(公告)号:US20150027374A1

    公开(公告)日:2015-01-29

    申请号:US14302646

    申请日:2014-06-12

    Abstract: A vapor deposition apparatus includes a first injection unit through which a first raw gas is injected in a first direction, and a first filter unit which is mounted in the first injection unit and includes a plurality of plates separated from one another in the first direction and disposed in parallel to one another, where holes are defined in each of the plurality of plates which is detachably coupled in the first filter unit.

    Abstract translation: 一种气相沉积装置包括:第一注入单元,通过该第一注入单元沿第一方向注入第一原料气体;第一过滤器单元,其安装在第一注射单元中并且包括沿第一方向彼此分离的多个板; 彼此平行设置,其中,在可拆卸地联接在第一过滤器单元中的多个板中的每一个中限定有孔。

    VAPOR DEPOSITION APPARATUS
    16.
    发明申请
    VAPOR DEPOSITION APPARATUS 审中-公开
    蒸气沉积装置

    公开(公告)号:US20140053777A1

    公开(公告)日:2014-02-27

    申请号:US13689638

    申请日:2012-11-29

    CPC classification number: C23C16/50 C23C16/45519 C23C16/45536 C23C16/45551

    Abstract: A vapor deposition apparatus that includes a first region having a first injecting unit for injecting a first raw material and a second region having a second injecting unit for injecting a second raw material, wherein the second injecting unit comprises a plasma generation unit, wherein the plasma generation unit comprises a plasma generator, a corresponding surface surrounding the plasma generator, and a plasma generation space formed between the plasma generator and the corresponding surface, and wherein distances between the plasma generator and the corresponding surface periodically vary along an outer circumference of the plasma generator. In the vapor deposition apparatus, the quality of thin film is increased by forming stable volume plasma through set positions where the plasma is generated in the plasma generation space.

    Abstract translation: 一种蒸镀装置,其特征在于,具备:第一区域,具有用于注入第一原料的第一注入单元和具有用于注入第二原料的第二注入单元的第二区域,其中,所述第二注入单元包括等离子体产生单元, 生成单元包括等离子体发生器,围绕等离子体发生器的对应表面以及形成在等离子体发生器和对应表面之间的等离子体产生空间,并且其中等离子体发生器与对应表面之间的距离周期性地沿等离子体的外周变化 发电机。 在气相沉积装置中,通过在等离子体产生空间中产生等离子体的设定位置形成稳定的体积等离子体来提高薄膜的质量。

    VAPOR DEPOSITION APPARATUS
    18.
    发明申请

    公开(公告)号:US20220380899A1

    公开(公告)日:2022-12-01

    申请号:US17882967

    申请日:2022-08-08

    Abstract: A vapor deposition apparatus for providing a deposition film on a substrate, the vapor deposition apparatus includes a plurality of first nozzle parts which injects a first raw material toward the substrate; a plurality of second nozzle parts which is alternately disposed together with the plurality of first nozzle parts and injects a second raw material toward the substrate; a diffuser unit which distributes the second raw material to the plurality of second nozzle parts; and a supply unit which supplies the second raw material to the diffuser unit.

    Vapor deposition apparatus
    19.
    发明授权

    公开(公告)号:US11408072B2

    公开(公告)日:2022-08-09

    申请号:US16271189

    申请日:2019-02-08

    Abstract: A vapor deposition apparatus for providing a deposition film on a substrate, the vapor deposition apparatus includes a plurality of first nozzle parts which injects a first raw material toward the substrate; a plurality of second nozzle parts which is alternately disposed together with the plurality of first nozzle parts and injects a second raw material toward the substrate; a diffuser unit which distributes the second raw material to the plurality of second nozzle parts; and a supply unit which supplies the second raw material to the diffuser unit.

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