公开(公告)号：US10522581B2

公开(公告)日：2019-12-31

申请号：US15470152

申请日：2017-03-27

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Gwi-Deok Ryan Lee ,  Myung Won Lee ,  Tae Yon Lee ,  In Gyu Baek

IPC: H01L27/146 ,  H01L27/30 ,  H04N5/378 ,  H04N9/04

Abstract: An image sensor includes a semiconductor substrate providing a plurality of pixel regions, a semiconductor photoelectric device disposed in each of the plurality of pixel regions, an organic photoelectric device disposed above the semiconductor photoelectric device, and a pixel circuit disposed below the semiconductor photoelectric device. The pixel circuit includes a plurality of driving transistors configured to generate a pixel voltage signal from an electric charge generated in the semiconductor photoelectric device and the organic photoelectric device. A driving gate electrode of at least one of the plurality of driving transistors has a region embedded in the semiconductor substrate.

公开(公告)号：US10483304B2

公开(公告)日：2019-11-19

申请号：US15786687

申请日：2017-10-18

Applicant: SAMSUNG ELECTRONICS CO., LTD

Inventor： Gwi-Deok Ryan Lee ,  Tae Yon Lee

IPC: H01L27/146 ,  H04N5/374 ,  H04N5/376 ,  H04N5/378 ,  H04N5/353 ,  H04N5/3745

Abstract: An image sensor includes a light-sensing element that generates charge in response to incident light, a storage diode formed in a substrate, wherein the storage diode stores the charge generated by the light-sensing element, a floating diffusion region formed in a top surface of the substrate and spaced apart from the storage diode, and a transfer gate at least partially buried under the top surface of the substrate, wherein the transfer gate controls the transfer of the charge from the storage diode to the floating diffusion region.

公开(公告)号：US09762890B2

公开(公告)日：2017-09-12

申请号：US14075174

申请日：2013-11-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： Eric Fossum ,  Tae Yon Lee

IPC: H04N13/02 ,  H01L27/146 ,  G01S7/491

CPC classification number: H04N13/204 ,  G01S7/4914 ,  G01S7/4915 ,  G06T7/521 ,  H01L27/14603 ,  H01L27/14609 ,  H01L27/14612 ,  H01L27/14614

Abstract: A pixel of a distance sensor includes a photosensor that generates photocharges corresponding to light incident in a first direction. The photosensor includes a plurality of first layers having a cross-sectional area increasing along the first direction after a first depth and at least one transfer gate which receives a transfer control signal for transferring the photocharges to a floating diffusion node. A strong electric field is formed in the direction in which the photocharges move horizontally or vertically in the pixel, thereby accelerating the photocharges, allowing for increased sensitivity and demodulation contrast.

公开(公告)号：US11088193B2

公开(公告)日：2021-08-10

申请号：US16661346

申请日：2019-10-23

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Gwi-Deok Ryan Lee ,  Myung Won Lee ,  Tae Yon Lee ,  In Gyu Baek

IPC: H01L27/146 ,  H01L27/30 ,  H04N5/378 ,  H04N9/04

Abstract: An image sensor includes a semiconductor substrate providing a plurality of pixel regions, a semiconductor photoelectric device disposed in each of the plurality of pixel regions, an organic photoelectric device disposed above the semiconductor photoelectric device, and a pixel circuit disposed below the semiconductor photoelectric device. The pixel circuit includes a plurality of driving transistors configured to generate a pixel voltage signal from an electric charge generated in the semiconductor photoelectric device and the organic photoelectric device. A driving gate electrode of at least one of the plurality of driving transistors has a region embedded in the semiconductor substrate.

公开(公告)号：US20200066778A1

公开(公告)日：2020-02-27

申请号：US16661346

申请日：2019-10-23

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： GWI-DEOK RYAN LEE ,  Myung Won Lee ,  Tae Yon Lee ,  In Gyu Baek

IPC: H01L27/146 ,  H04N9/04 ,  H04N5/378 ,  H01L27/30

Abstract: An image sensor includes a semiconductor substrate providing a plurality of pixel regions, a semiconductor photoelectric device disposed in each of the plurality of pixel regions, an organic photoelectric device disposed above the semiconductor photoelectric device, and a pixel circuit disposed below the semiconductor photoelectric device. The pixel circuit includes a plurality of driving transistors configured to generate a pixel voltage signal from an electric charge generated in the semiconductor photoelectric device and the organic photoelectric device. A driving gate electrode of at least one of the plurality of driving transistors has a region embedded in the semiconductor substrate.

公开(公告)号：US10529755B2

公开(公告)日：2020-01-07

申请号：US15704690

申请日：2017-09-14

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Tae Yon Lee ,  Gwi Deok Lee ,  Masaru Ishii ,  Young Gu Jin

IPC: H01L27/146 ,  H01L27/148 ,  H04N5/3745 ,  H04N5/361 ,  H04N5/378 ,  H04N5/369

Abstract: An image sensor includes a first photoelectric conversion layer that is configured to convert light to a first signal. The image sensor also includes a transfer transistor. The transfer transistor includes a storage node region which stores the first signal. The transfer transistor also includes a transfer gate which transfers the stored first signal, and a floating diffusion region that receives the first signal. The image sensor includes a reset transistor that resets the floating diffusion region, and a drive transistor which receives a pixel voltage. The drive transistor generates an output voltage. The image sensor also includes a selection transistor which outputs the output voltage. A reset drain voltage is applied to a drain electrode of the reset transistor, and is independent of the pixel voltage. The reset drain voltage ranges from about 0.1V to about 1.0V.

公开(公告)号：US10109664B2

公开(公告)日：2018-10-23

申请号：US15607958

申请日：2017-05-30

Applicant: Samsung Electronics Co., Ltd.

Inventor： In Gyu Baek ,  Sang Hoon Uhm ,  Tae Yon Lee ,  Jae Sung Hur

IPC: H01L31/0232 ,  H01L27/146

Abstract: An image sensor configured to provide improved reliability may include a charge passivation layer that includes a multiple different elements, each element of the different elements being a metal element or a metalloid element. The different elements may include a first element of a first group of periodic table elements and a second element of a second, different group of periodic table elements. The charge passivation layer may include an amorphous crystal structure.

公开(公告)号：US20180053796A1

公开(公告)日：2018-02-22

申请号：US15607958

申请日：2017-05-30

Applicant: Samsung Electronics Co., Ltd.

Inventor： In Gyu BAEK ,  Sang Hoon Uhm ,  Tae Yon Lee ,  Jae Sung Hur

IPC: H01L27/146

CPC classification number: H01L27/1463 ,  H01L27/14627 ,  H01L27/1464 ,  H01L27/14685 ,  H01L27/14689

Abstract: An image sensor configured to provide improved reliability may include a charge passivation layer that includes a multiple different elements, each element of the different elements being a metal element or a metalloid element. The different elements may include a first element of a first group of periodic table elements and a second element of a second, different group of periodic table elements. The charge passivation layer may include an amorphous crystal structure.

公开(公告)号：US20170221220A1

公开(公告)日：2017-08-03

申请号：US15491143

申请日：2017-04-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： Eric Fossum ,  Tae Yon Lee

IPC: G06T7/521 ,  G01S7/491 ,  H01L27/146

CPC classification number: H04N13/204 ,  G01S7/4914 ,  G01S7/4915 ,  G06T7/521 ,  H01L27/14603 ,  H01L27/14609 ,  H01L27/14612 ,  H01L27/14614

Abstract: A pixel of a distance sensor includes a photosensor that generates photocharges corresponding to light incident in a first direction. The photosensor includes a plurality of first layers having a cross-sectional area increasing along the first direction after a first depth and at least one transfer gate which receives a transfer control signal for transferring the photocharges to a floating diffusion node. A strong electric field is formed in the direction in which the photocharges move horizontally or vertically in the pixel, thereby accelerating the photocharges, allowing for increased sensitivity and demodulation contrast.

公开(公告)号：US09432604B2

公开(公告)日：2016-08-30

申请号：US14051993

申请日：2013-10-11

Applicant: Samsung Electronics Co., Ltd.

Inventor： Tae Chan Kim ,  Min Ho Kim ,  Dong Ki Min ,  Sang Chul Sul ,  Tae Seok Oh ,  Kwang Hyun Lee ,  Tae Yon Lee ,  Jung Hoon Jung ,  Young Gu Jin

IPC: H04N5/335 ,  H04N5/225 ,  H01L31/062 ,  H01L27/14 ,  H04N5/374 ,  H01L27/146

CPC classification number: H04N5/374 ,  H01L27/14627 ,  H01L27/14634

Abstract: An image sensor chip includes a first wafer and a second wafer. The first wafer includes an image sensor having a plurality of sub-pixels, each of which is configured to detect at least one photon and output a sub-pixel signal according to a result of the detection. The image processor is configured to process sub-pixel signals for each sub-pixel and generate image data. The first wafer and the second wafer are formed in a wafer stack structure.

Abstract translation: 图像传感器芯片包括第一晶片和第二晶片。 第一晶片包括具有多个子像素的图像传感器，每个子像素被配置为检测至少一个光子并根据检测结果输出子像素信号。 图像处理器被配置为处理每个子像素的子像素信号并生成图像数据。 第一晶片和第二晶片形成为晶片堆叠结构。