公开(公告)号：US20180053796A1

公开(公告)日：2018-02-22

申请号：US15607958

申请日：2017-05-30

Applicant: Samsung Electronics Co., Ltd.

Inventor： In Gyu BAEK ,  Sang Hoon Uhm ,  Tae Yon Lee ,  Jae Sung Hur

IPC: H01L27/146

CPC classification number: H01L27/1463 ,  H01L27/14627 ,  H01L27/1464 ,  H01L27/14685 ,  H01L27/14689

Abstract: An image sensor configured to provide improved reliability may include a charge passivation layer that includes a multiple different elements, each element of the different elements being a metal element or a metalloid element. The different elements may include a first element of a first group of periodic table elements and a second element of a second, different group of periodic table elements. The charge passivation layer may include an amorphous crystal structure.

公开(公告)号：US20190103425A1

公开(公告)日：2019-04-04

申请号：US15968954

申请日：2018-05-02

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sung Hyun YOON ,  Doo Won KWON ,  Kwan Sik KIM ,  In Gyu BAEK ,  Tae Young SONG

IPC: H01L27/146 ,  H01L23/00 ,  H01L21/768 ,  H01L31/18 ,  H01L21/56 ,  H01L23/522 ,  H01L23/528 ,  H01L21/683

Abstract: A method of manufacturing an image sensing apparatus includes: forming a first substrate structure including a first region of a pixel region, the first substrate structure having a first surface and a second surface; forming a second substrate structure including a circuit region for driving the pixel region, the second substrate structure having a third surface and a fourth surface; bonding the first substrate structure to the second substrate structure, such that the first surface is connected to the third surface; forming a second region of the pixel region on the second surface; forming a first connection via, the first connection via extending from the second surface to pass through the first substrate structure; mounting semiconductor chips on the fourth surface, using a conductive bump; and separating a stack structure of the first substrate structure, the second substrate structure, and the semiconductor chips into unit image sensing apparatuses.