公开(公告)号：US20230399749A1

公开(公告)日：2023-12-14

申请号：US18455941

申请日：2023-08-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Bo-Eun PARK ,  Jooho LEE ,  Yongsung KIM ,  Jeonggyu SONG

IPC: C23C16/56 ,  C23C16/455 ,  C23C14/58 ,  C23C16/40 ,  C01G27/02 ,  C23C14/08 ,  H10B51/00 ,  H10B53/00

CPC classification number: C23C16/56 ,  C23C16/45525 ,  C23C14/5806 ,  C23C16/40 ,  C01G27/02 ,  C23C14/08 ,  H10B51/00 ,  H10B53/00 ,  C01P2004/24 ,  C01P2002/72 ,  C01P2006/40 ,  C01P2002/76

Abstract: A thin film structure includes a first conductive layer, a dielectric material layer on the first conductive layer, and an upper layer on the dielectric material layer. The dielectric material layer including HfxA1-xO2 satisfies at least one of a first condition and a second condition. In the first condition the dielectric material layer is formed to a thickness of 5 nm or less and in the second condition the x in HfxA1-xO2 is in a range of 0.3 to 0.5.

公开(公告)号：US20230231004A1

公开(公告)日：2023-07-20

申请号：US17882788

申请日：2022-08-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： Byunghoon NA ,  Jooho LEE

IPC: H01L49/02 ,  H01L27/24 ,  H01L27/108 ,  H01L45/00 ,  H01G4/008 ,  H01G4/33

CPC classification number: H01L28/75 ,  H01L27/2436 ,  H01L27/10814 ,  H01L27/10817 ,  H01L45/1266 ,  H01L28/55 ,  H01L28/65 ,  H01G4/008 ,  H01G4/33 ,  H01L27/10823 ,  H01L45/147 ,  H01G4/1227

Abstract: Provided are a capacitor and a semiconductor device including the same. The capacitor includes: a dielectric layer having a perovskite crystal structure; and first and second electrodes spaced apart from each other with the dielectric layer therebetween. At least one of the first and second electrodes includes a metallic layer having a perovskite crystal structure, a first ionic layer having ionic properties, and a semiconductor layer.

公开(公告)号：US20230143124A1

公开(公告)日：2023-05-11

申请号：US17861577

申请日：2022-07-11

Applicant: Samsung Electronics Co., Ltd. ,  AJOU UNIVERSITY INDUSTRY-ACADEMIC COOPERATION FOUNDATION

Inventor： Changsoo LEE ,  Sangwoon LEE ,  Yongsung KIM ,  Jinhong KIM ,  Hyungjun KIM ,  Jooho LEE

IPC: H01L49/02 ,  H01L27/108 ,  H01G4/008

CPC classification number: H01L28/55 ,  H01L27/10852 ,  H01G4/008 ,  H01L28/75

Abstract: A capacitor includes a lower electrode including a perovskite material, an upper electrode spaced apart from the lower electrode, a dielectric layer positioned between the lower electrode and the upper electrode and including a perovskite material, and a passivation layer positioned between the lower electrode and the dielectric layer and including SrxTiyO3 in which a content of Ti is greater than a content of Sr.

公开(公告)号：US20230022629A1

公开(公告)日：2023-01-26

申请号：US17702155

申请日：2022-03-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Boeun PARK ,  Yongsung KIM ,  Jeonggyu SONG ,  Jooho LEE

IPC: H01L49/02 ,  H01L27/11502

Abstract: An anti-ferroelectric thin-film structure including a dielectric layer including an anti-ferroelectric phase of hafnium oxide; and an inserted layer in the dielectric layer, the inserted layer including an oxide. An electronic device to which the anti-ferroelectric thin-film structure has been applied may secure an operating voltage section with little hysteresis.

公开(公告)号：US20220406884A1

公开(公告)日：2022-12-22

申请号：US17844896

申请日：2022-06-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyungjun KIM ,  Changsoo LEE ,  Yong-Hee CHO ,  Yongsung KIM ,  Jooho LEE

IPC: H01L49/02 ,  H01L27/108

Abstract: Provided are a thin film structure, a capacitor including the thin film structure, a semiconductor device including the thin film structure, and a method of manufacturing the thin film structure, in which the thin film structure may include: a first electrode thin film disposed on a substrate and including a first perovskite-based oxide; and a protective film disposed on the first electrode thin film and including a second perovskite-based oxide that is oxygen-deficient and includes a doping element. The thin film structure may prevent the deterioration of conductivity and a crystalline structure of a perovskite-based oxide electrode, which is a lower electrode, even in a high-temperature oxidizing atmosphere for subsequent dielectric film deposition.

公开(公告)号：US20220328615A1

公开(公告)日：2022-10-13

申请号：US17851836

申请日：2022-06-28

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jeongil BANG ,  Seungwoo JANG ,  Hyosik MUN ,  Younggeun PARK ,  Jooho LEE

IPC: H01L49/02 ,  H01L27/11507

Abstract: A capacitor includes a lower electrode, a first dielectric layer provided on the lower electrode including a perovskite structure, an upper electrode including a perovskite structure, a first dielectric layer between provided on the lower electrode and the upper electrode; and a second dielectric layer, having a band gap energy greater than that of the first dielectric layer, provided between on the first dielectric layer and the upper electrode, the capacitor may have a low leakage current density and stable crystallinity, thereby suppressing a decrease in a dielectric constant.

公开(公告)号：US20220293719A1

公开(公告)日：2022-09-15

申请号：US17749702

申请日：2022-05-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jeonggyu SONG ,  Kyooho JUNG ,  Younsoo KIM ,  Haeryong KIM ,  Jooho LEE

IPC: H01L49/02 ,  H01L21/285 ,  H01L27/108

Abstract: A capacitor includes: a lower electrode including a metal nitride represented by MM′N, wherein M is a metal element, M′ is an element different from M, and N is nitrogen; a dielectric layer on the lower electrode; an interfacial layer between the lower electrode and the dielectric layer and including a metal nitrate represented by MM′ON, wherein M is a metal element, M′ is an element different from M, N is nitrogen, and O is oxygen; and an upper electrode on the dielectric layer.

公开(公告)号：US20220238634A1

公开(公告)日：2022-07-28

申请号：US17407653

申请日：2021-08-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Byunghoon NA ,  Kiyoung LEE ,  Jooho LEE ,  Myoungho JEONG

IPC: H01L49/02 ,  H01G4/30 ,  H01L45/00

Abstract: A capacitor includes a first electrode including a first reinforcement material having a perovskite crystal structure; and a first metallic material having a perovskite crystal structure; a second electrode on the first electrode; and a dielectric layer between the first electrode and the second electrode, wherein the first metallic material has greater a greater electronegativity than that of the first reinforcement material.

公开(公告)号：US20220123103A1

公开(公告)日：2022-04-21

申请号：US17563416

申请日：2021-12-28

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kyooho JUNG ,  Jeonggyu SONG ,  Younsoo KIM ,  Jooho LEE

IPC: H01L49/02 ,  H01L21/285 ,  H01L27/108

Abstract: An integrated circuit device includes a lower electrode including a niobium (Nb)-containing layer doped with titanium (Ti), a dielectric layer on the lower electrode, and an upper electrode that covers the dielectric layer.

公开(公告)号：US20220069065A1

公开(公告)日：2022-03-03

申请号：US17146894

申请日：2021-01-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jeonggyu SONG ,  Younsoo KIM ,  Jooho LEE ,  Narae HAN

IPC: H01L49/02 ,  H01L27/108

Abstract: Provided is a semiconductor device including a lower electrode, an upper electrode isolated from direct contact with the lower electrode, and a dielectric layer between the lower electrode and the upper electrode, the dielectric layer comprising a first metal oxide area, a second metal oxide area, and a third metal oxide area. The third metal oxide area is between the first metal oxide area and the second metal oxide area, and includes boron and one or more metal elements selected from aluminum (Al), magnesium (Mg), silicon (Si), or beryllium (Be). In the third metal oxide area, a content of boron (B) is less than or equal to a content of the metal elements of Al, Mg, Si, and/or Be.