公开(公告)号：US10199470B2

公开(公告)日：2019-02-05

申请号：US15346224

申请日：2016-11-08

Applicant: Raytheon Company

Inventor： Alan J. Bielunis ,  Istvan Rodriguez ,  Christopher M. Laighton

IPC: H01L29/417 ,  H01L27/02 ,  H01L27/088 ,  H01L29/06 ,  H01L29/78 ,  H01L29/423 ,  H01L29/812

Abstract: A Field Effect Transistor (FET) having a substrate; a plurality of active regions disposed on the substrate; and a laterally extending finger-like control electrode disposed on a portion of a surface of the substrate. The active regions are laterally spaced one from the other successively along the laterally extending finger-like control electrode. The laterally extending finger-like control electrode controls a flow of carriers through each one of the plurality of active regions between a source electrode and a drain electrode.

公开(公告)号：US09685438B2

公开(公告)日：2017-06-20

申请号：US14830142

申请日：2015-08-19

Applicant: Raytheon Company

Inventor： Christopher M. Laighton ,  Alan J. Bielunis ,  Istvan Rodriguez

IPC: H01L27/088 ,  H01L29/06 ,  H01L29/417 ,  H01L29/423

CPC classification number: H01L27/088 ,  H01L29/0696 ,  H01L29/2003 ,  H01L29/41758 ,  H01L29/42316 ,  H01L29/4238 ,  H01L29/812

Abstract: A Field Effect Transistor (FET) having: a plurality of FET cells having a plurality of source pads, a plurality of drain pads, and a plurality of gate electrodes disposed on a surface of a substrate; each one of the FET cells having a corresponding one of the gate electrodes disposed between one of the source pads and one of the drain pads; a gate contact connected to the gate electrodes of each one of the FET cells; a drain contact connected to the drain pad of each one of the FET cells; and a source contact connected to source pad of each one of the FET cells. The cells are disposed on a surface in a two-dimensional array.

公开(公告)号：US20170053910A1

公开(公告)日：2017-02-23

申请号：US14830148

申请日：2015-08-19

Applicant: Raytheon Company

Inventor： Istvan Rodriguez ,  Christopher M. Laighton ,  Alan J. Bielunis

IPC: H01L27/088 ,  H01L29/423 ,  H01L29/06 ,  H01L29/417 ,  H01L23/66 ,  H01L23/48

CPC classification number: H01L27/088 ,  H01L23/481 ,  H01L23/66 ,  H01L29/0696 ,  H01L29/2003 ,  H01L29/41758 ,  H01L29/42316 ,  H01L29/4238 ,  H01L29/812 ,  H01L2223/6622 ,  H01L2223/6627 ,  H01L2224/48091 ,  H01L2924/00014

Abstract: A Field Effect Transistor (FET) having a plurality of FET cells having a plurality of source pads, a plurality of drain pads, and a plurality of gate electrodes disposed on a surface of a substrate; each one of the FET cells having a corresponding one of the gate electrodes disposed between one of the source pads and one of the drain pads. The FET includes; a gate contact connected to the gate electrode of each one of the FET cells; a drain contact connected to the drain pad of each one of the FET cells; and a source contact connected to source pad of each one of the FET cells. The cells are disposed in a loop configuration.

Abstract translation: 具有多个FET单元的场效应晶体管（FET），具有多个源极焊盘，多个漏极焊盘和设置在衬底的表面上的多个栅电极; 每个FET单元具有设置在一个源极焊盘和一个漏极焊盘之间的对应的一个栅极电极。 FET包括 连接到每个FET单元的栅电极的栅极触点; 连接到每个FET单元的漏极焊盘的漏极触点; 以及源极触点，其连接到每个FET单元的源极焊盘。 电池以环形配置布置。

公开(公告)号：US20170053909A1

公开(公告)日：2017-02-23

申请号：US14830142

申请日：2015-08-19

Applicant: RAYTHEON COMPANY

Inventor： Christopher M. Laighton ,  Alan J. Bielunis ,  Istvan Rodriguez

IPC: H01L27/088 ,  H01L29/417 ,  H01L29/423 ,  H01L29/06

CPC classification number: H01L27/088 ,  H01L29/0696 ,  H01L29/2003 ,  H01L29/41758 ,  H01L29/42316 ,  H01L29/4238 ,  H01L29/812

Abstract: A Field Effect Transistor (FET) having: a plurality of FET cells having a plurality of source pads, a plurality of drain pads, and a plurality of gate electrodes disposed on a surface of a substrate; each one of the FET cells having a corresponding one of the gate electrodes disposed between one of the source pads and one of the drain pads; a gate contact connected to the gate electrodes of each one of the FET cells; a drain contact connected to the drain pad of each one of the FET cells; and a source contact connected to source pad of each one of the FET cells. The cells are disposed on a surface in a two-dimensional array.

Abstract translation: 一种场效应晶体管（FET），具有：多个FET单元，具有多个源极焊盘，多个漏极焊盘以及设置在基板的表面上的多个栅极电极; 所述FET单元中的每一个具有设置在所述源极焊盘和所述漏极焊盘之一之间的对应的一个所述栅电极; 连接到每个FET单元的栅电极的栅极触点; 连接到每个FET单元的漏极焊盘的漏极触点; 以及源极触点，其连接到每个FET单元的源极焊盘。 电池以二维阵列设置在表面上。