公开(公告)号：US20160248392A1

公开(公告)日：2016-08-25

申请号：US14628917

申请日：2015-02-23

Applicant: Raytheon Company

Inventor： Christopher M. Laighton ,  James A. Robbins ,  Jonathan B. Langille ,  Philip M. Henault

IPC: H03F3/60 ,  H03F3/21

CPC classification number: H03F3/602 ,  H01P5/186 ,  H01P5/187 ,  H03F2200/192 ,  H03F2200/198 ,  H03F2200/204 ,  H03F2200/451

Abstract: A power amplifier structure having: a power divider for dividing power in a signal fed to an input port between a pair of output ports. Each one of a pair of amplifiers has: an input coupled to a corresponding one of the pair of power divider output ports; and an output. A power combiner is provided. Signals at the power divider output ports are fed to the inputs of the pair of amplifiers in a forward direction and then pass through the amplifiers in the forward direction towards the outputs of the pair of amplifiers. Connectors direct the signals at the amplifier outputs to the power combiners, the signal then passing through the power combiner to an output port in a direction opposite to the forward direction.

Abstract translation: 一种功率放大器结构，具有：功率分配器，用于分配馈送到一对输出端口之间的输入端口的信号中的功率。 一对放大器中的每一个具有：耦合到所述一对功率分配器输出端口中的相应一个的输入端; 和输出。 提供功率组合器。 功率分配器输出端口处的信号以正向馈送到放大器对的输入端，然后沿着正向通过放大器朝向该对放大器的输出端。 连接器将放大器输出端的信号引导到功率组合器，然后信号通过功率组合器以与正向相反的方向通过输出端口。

公开(公告)号：US11177547B1

公开(公告)日：2021-11-16

申请号：US16867067

申请日：2020-05-05

Applicant: Raytheon Company

Inventor： Elicia K. Harper ,  Christopher M. Laighton ,  Francois Y. Colomb

IPC: H01P5/16 ,  H01P3/08 ,  H01P1/18

Abstract: A branchline coupler structure having a pair of main transmission lines disposed on different horizontal levels of a support structure and a pair of shunt transmission lines, vertically disposed and laterally spaced, and disposed in the support structure. A first one of the pair of shunt transmission lines is coupled between: one region of a first one of the pair of main transmission lines and a first end of a second one of the pair of main transmission line. A second one of the pair of shunt transmission lines is coupled between a second region of the first one of the pair of main transmission lines, laterally spaced from the first region, and a second end of the second one of the main transmission lines.

公开(公告)号：US10511076B2

公开(公告)日：2019-12-17

申请号：US15693743

申请日：2017-09-01

Applicant: Raytheon Company

Inventor： Christopher M. Laighton ,  Susan C. Trulli ,  Elicia K. Harper

IPC: H01P5/18

Abstract: An RF coupler having: a pair of input ports; a pair of output ports; and a coupling region for coupling: a portion of an input signal at a first one of the input ports to first of the pair of output ports and another portion of the input signal fed to the first one of the input ports a second one of the output ports; and one portion of an input signal fed to a second one of the input ports to the second of the pair of output ports and another portion of the input signals fed to the second one of the input ports to the second one of the output ports. The coupling region comprises a plurality of serially connected, vertically stacked, coupling sections. Each one of a plurality of electrically conductive layers is disposed between a pair of the vertically stacked coupling sections.

公开(公告)号：US20190313522A1

公开(公告)日：2019-10-10

申请号：US15948404

申请日：2018-04-09

Applicant: Raytheon Company

Inventor： Susan C. Trulli ,  Christopher M. Laighton

IPC: H05K1/02 ,  H05K1/18 ,  H01L23/66 ,  H01L23/367 ,  H01L25/065 ,  H01L25/00 ,  H05K3/12 ,  H01L23/538 ,  H01L21/48 ,  H03F1/30 ,  H03F3/195 ,  H03F3/21 ,  H03F3/213 ,  H01L25/16 ,  H01L21/56 ,  H05K3/34 ,  H01L25/18

Abstract: A MMIC support and cooling structure having a three-dimensional, thermally conductive support structure having a plurality of surfaces and a circuit having a plurality of heat generating electrical components disposed on a first portion of the surfaces and interconnected by microwave transmission lines disposed on a second portion of the plurality of surfaces of the thermally conductive support structure

公开(公告)号：US10199470B2

公开(公告)日：2019-02-05

申请号：US15346224

申请日：2016-11-08

Applicant: Raytheon Company

Inventor： Alan J. Bielunis ,  Istvan Rodriguez ,  Christopher M. Laighton

IPC: H01L29/417 ,  H01L27/02 ,  H01L27/088 ,  H01L29/06 ,  H01L29/78 ,  H01L29/423 ,  H01L29/812

Abstract: A Field Effect Transistor (FET) having a substrate; a plurality of active regions disposed on the substrate; and a laterally extending finger-like control electrode disposed on a portion of a surface of the substrate. The active regions are laterally spaced one from the other successively along the laterally extending finger-like control electrode. The laterally extending finger-like control electrode controls a flow of carriers through each one of the plurality of active regions between a source electrode and a drain electrode.

公开(公告)号：US20180131066A1

公开(公告)日：2018-05-10

申请号：US15187219

申请日：2016-06-20

Applicant: Raytheon Company

Inventor： Christopher M. Laighton ,  Edward A. Watters ,  Keith R. Kessler

IPC: H01P3/00

CPC classification number: H01P3/003 ,  H01P3/006 ,  H01P11/003 ,  H05K1/0219 ,  H05K2201/0715

Abstract: A microwave transmission line having a coplanar waveguide and a pair of conductive members, each one of the pair of conductive members having a proximal end disposed on a portion of a corresponding one of a pair of ground plane conductors of the coplanar waveguide and a distal end disposed over, and vertically spaced from, a region between a center conductor of the coplanar waveguide and a corresponding one of the pair of ground plane conductors of the coplanar waveguide. The distal ends are laterally separated from each other by a region disposed over the center conductor.

公开(公告)号：US09685438B2

公开(公告)日：2017-06-20

申请号：US14830142

申请日：2015-08-19

Applicant: Raytheon Company

Inventor： Christopher M. Laighton ,  Alan J. Bielunis ,  Istvan Rodriguez

IPC: H01L27/088 ,  H01L29/06 ,  H01L29/417 ,  H01L29/423

CPC classification number: H01L27/088 ,  H01L29/0696 ,  H01L29/2003 ,  H01L29/41758 ,  H01L29/42316 ,  H01L29/4238 ,  H01L29/812

Abstract: A Field Effect Transistor (FET) having: a plurality of FET cells having a plurality of source pads, a plurality of drain pads, and a plurality of gate electrodes disposed on a surface of a substrate; each one of the FET cells having a corresponding one of the gate electrodes disposed between one of the source pads and one of the drain pads; a gate contact connected to the gate electrodes of each one of the FET cells; a drain contact connected to the drain pad of each one of the FET cells; and a source contact connected to source pad of each one of the FET cells. The cells are disposed on a surface in a two-dimensional array.

公开(公告)号：US09634613B1

公开(公告)日：2017-04-25

申请号：US15073853

申请日：2016-03-18

Applicant: Raytheon Company

Inventor： Edward A. Watters ,  Christopher M. Laighton ,  John P. Bettencourt

IPC: H03F3/04 ,  H03F1/02 ,  H03F3/193 ,  H03F1/30

CPC classification number: H03F1/0233 ,  H03F1/0205 ,  H03F1/301 ,  H03F3/193 ,  H03F3/505 ,  H03F2200/18 ,  H03F2200/219 ,  H03F2200/282 ,  H03F2200/291 ,  H03F2200/42 ,  H03F2200/451 ,  H03F2200/75

Abstract: A depletion mode FET having a source electrode connected to ground; and a bias circuit for producing a bias current for a gate electrode of the FET. The bias circuit includes a pair of source follower transistors circuits; a first one of the pair of two source follower transistor circuits being coupled between a first voltage supply having a first polarity relative to the ground potential and a second voltage supply having a second polarity relative to ground potential, the first polarity being opposite to the second polarity, the first one of the pair of the source follower transistor circuits supplying a control signal to a second one of the pair of source follower transistor circuits. The second one of the pair of source follower transistors circuits is coupled between the second voltage supply and the ground potential and wherein the second one of the pair of source follower transistor circuits produces a bias signal for the control electrode of the output transistor.

公开(公告)号：US20170053910A1

公开(公告)日：2017-02-23

申请号：US14830148

申请日：2015-08-19

Applicant: Raytheon Company

Inventor： Istvan Rodriguez ,  Christopher M. Laighton ,  Alan J. Bielunis

IPC: H01L27/088 ,  H01L29/423 ,  H01L29/06 ,  H01L29/417 ,  H01L23/66 ,  H01L23/48

CPC classification number: H01L27/088 ,  H01L23/481 ,  H01L23/66 ,  H01L29/0696 ,  H01L29/2003 ,  H01L29/41758 ,  H01L29/42316 ,  H01L29/4238 ,  H01L29/812 ,  H01L2223/6622 ,  H01L2223/6627 ,  H01L2224/48091 ,  H01L2924/00014

Abstract: A Field Effect Transistor (FET) having a plurality of FET cells having a plurality of source pads, a plurality of drain pads, and a plurality of gate electrodes disposed on a surface of a substrate; each one of the FET cells having a corresponding one of the gate electrodes disposed between one of the source pads and one of the drain pads. The FET includes; a gate contact connected to the gate electrode of each one of the FET cells; a drain contact connected to the drain pad of each one of the FET cells; and a source contact connected to source pad of each one of the FET cells. The cells are disposed in a loop configuration.

Abstract translation: 具有多个FET单元的场效应晶体管（FET），具有多个源极焊盘，多个漏极焊盘和设置在衬底的表面上的多个栅电极; 每个FET单元具有设置在一个源极焊盘和一个漏极焊盘之间的对应的一个栅极电极。 FET包括 连接到每个FET单元的栅电极的栅极触点; 连接到每个FET单元的漏极焊盘的漏极触点; 以及源极触点，其连接到每个FET单元的源极焊盘。 电池以环形配置布置。

公开(公告)号：US20170053909A1

公开(公告)日：2017-02-23

申请号：US14830142

申请日：2015-08-19

Applicant: RAYTHEON COMPANY

Inventor： Christopher M. Laighton ,  Alan J. Bielunis ,  Istvan Rodriguez

IPC: H01L27/088 ,  H01L29/417 ,  H01L29/423 ,  H01L29/06

CPC classification number: H01L27/088 ,  H01L29/0696 ,  H01L29/2003 ,  H01L29/41758 ,  H01L29/42316 ,  H01L29/4238 ,  H01L29/812

Abstract: A Field Effect Transistor (FET) having: a plurality of FET cells having a plurality of source pads, a plurality of drain pads, and a plurality of gate electrodes disposed on a surface of a substrate; each one of the FET cells having a corresponding one of the gate electrodes disposed between one of the source pads and one of the drain pads; a gate contact connected to the gate electrodes of each one of the FET cells; a drain contact connected to the drain pad of each one of the FET cells; and a source contact connected to source pad of each one of the FET cells. The cells are disposed on a surface in a two-dimensional array.

Abstract translation: 一种场效应晶体管（FET），具有：多个FET单元，具有多个源极焊盘，多个漏极焊盘以及设置在基板的表面上的多个栅极电极; 所述FET单元中的每一个具有设置在所述源极焊盘和所述漏极焊盘之一之间的对应的一个所述栅电极; 连接到每个FET单元的栅电极的栅极触点; 连接到每个FET单元的漏极焊盘的漏极触点; 以及源极触点，其连接到每个FET单元的源极焊盘。 电池以二维阵列设置在表面上。