公开(公告)号：US20140268447A1

公开(公告)日：2014-09-18

申请号：US13841239

申请日：2013-03-15

Applicant: QUALCOMM INCORPORATED

Inventor： Prasad Srinivasa Siva Gudem ,  Himanshu Khatri ,  Devavrata V. Godbole ,  Eugene Robert Worley

IPC: H02H9/04

CPC classification number: H03F1/223 ,  H01L27/0255 ,  H02H9/046 ,  H03F1/523 ,  H03F3/193 ,  H03F2200/489

Abstract: An apparatus is described. The apparatus includes an input device. The apparatus also includes a positive supply voltage pad. The apparatus further includes an input signal pad. The apparatus also includes a ground pad. The apparatus further includes charged-device model protection circuitry that protects the input device from electrostatic discharge. The charged-device model protection circuitry includes at least one of de-Q circuitry and a cascode device.

公开(公告)号：US20140198414A1

公开(公告)日：2014-07-17

申请号：US13740102

申请日：2013-01-11

Applicant: QUALCOMM INCORPORATED

Inventor： Eugene Robert Worley ,  Sreeker Dundigal ,  Evan Siansuri ,  Reza Jalilizeinali ,  Michael Brunolli

IPC: H02H9/04

CPC classification number: H02H9/046 ,  G06F1/305 ,  H01L23/62 ,  H01L2924/0002 ,  H02H9/043 ,  H01L2924/00

Abstract: In a particular embodiment, a circuit includes a power supply, a ground, and a clamping transistor circuit coupled to the power supply and to the ground. The circuit further includes a disable clamp circuit. The disable clamp circuit is coupled to the power supply and is responsive to a second power supply input to selectively disable the clamping transistor circuit by modifying a charging current applied to a capacitor of the clamping transistor circuit. In a particular embodiment, modifying the charging current includes enabling a second charging path. Enabling the second charging path enables charging the capacitor at a higher charging rate than a charging rate associated with charging the capacitor via a first charging path.

Abstract translation: 在特定实施例中，电路包括耦合到电源和接地的电源，接地和钳位晶体管电路。 电路还包括禁止钳位电路。 禁止钳位电路耦合到电源，并且响应于第二电源输入，以通过修改施加到钳位晶体管电路的电容器的充电电流来选择性地禁止钳位晶体管电路。 在特定实施例中，修改充电电流包括实现第二充电路径。 启用第二充电路径使得能够以比通过第一充电路径对电容器充电相关的充电速率更高的充电速率对电容器进行充电。

公开(公告)号：US09853446B2

公开(公告)日：2017-12-26

申请号：US14838034

申请日：2015-08-27

Applicant: QUALCOMM Incorporated

Inventor： Shiqun Gu ,  Eugene Robert Worley ,  Ratibor Radojcic ,  Urmi Ray

IPC: H02H9/04 ,  H01L23/48 ,  H01L23/60 ,  H01L23/62 ,  H01L27/02

CPC classification number: H02H9/046 ,  H01L23/48 ,  H01L23/60 ,  H01L23/62 ,  H01L27/0255 ,  H01L27/0292 ,  H01L27/0296 ,  H01L2224/16225 ,  H01L2924/15311 ,  H01L2924/181 ,  H02H9/044 ,  H01L2924/00012

Abstract: An intergrated circuit (IC) package includes a die, a package substrate coupled to the die, and a first electrostatic discharge (ESD) protection component coupled to the package substrate, where the first electrostatic discharge (ESD) protection component is configured to provide package level electrostatic discharge (ESD) protection. In some implementations, the first electrostatic discharge (ESD) protection component is embedded in the package substrate. In some implementations, the die includes an internal electrostatic discharge (ESD) protection component configured to provide die level electrostatic discharge (ESD) protection. In some implementations, the internal electrostatic discharge (ESD) protection component and the first electrostatic discharge (ESD) protection component are configured to provide cumulative electrostatic discharge (ESD) protection for the die.

公开(公告)号：US20140254051A1

公开(公告)日：2014-09-11

申请号：US13794268

申请日：2013-03-11

Applicant: QUALCOMM INCORPORATED

Inventor： Ankit Srivastava ,  Matthew David Sienko ,  Eugene Robert Worley

IPC: H02H9/04 ,  G05F1/10

CPC classification number: G05F1/10 ,  H01L27/0274 ,  H01L27/0277 ,  H01L27/0629 ,  H02H3/006 ,  H02H9/041 ,  H02H9/046

Abstract: A device includes a snapback clamp circuit configured to clamp a supply voltage in response to the supply voltage exceeding a trigger voltage level. In at least one embodiment, the snapback clamp circuit includes a clamp transistor and a programmable resistance portion that is responsive to a control signal to calibrate the trigger voltage level. Alternatively or in addition, the snapback clamp circuit may include a programmable bias device configured to calibrate the trigger voltage level by biasing a gate terminal of the clamp transistor. In another particular embodiment, a method of calibrating a snapback clamp circuit is disclosed. In another particular embodiment, a method of operating an integrated circuit is disclosed.

Abstract translation: 一种设备包括一个快速恢复钳位电路，配置成响应于超过触发电压电平的电源电压来钳位电源电压。 在至少一个实施例中，快速恢复钳位电路包括钳位晶体管和可编程电阻部分，其响应于控制信号来校准触发电压电平。 或者或另外，快速恢复钳位电路可以包括可编程偏置装置，其被配置为通过偏置钳位晶体管的栅极端子来校准触发电压电平。 在另一个具体实施例中，公开了一种校准快速恢复钳位电路的方法。 在另一个具体实施例中，公开了一种操作集成电路的方法。