公开(公告)号：US20150035162A1

公开(公告)日：2015-02-05

申请号：US13957462

申请日：2013-08-02

Applicant: QUALCOMM Incorporated

Inventor： Je-Hsiung Lan ,  Chengjie Zuo ,  Mario Francisco Velez ,  Daeik D. Kim ,  David F. Berdy ,  Changhan Yun ,  Robert P. Mikulka ,  Jonghae Kim ,  Matthew M. Nowak

IPC: H01L23/522 ,  G06F17/50 ,  H01L21/768

CPC classification number: H01L23/5226 ,  G06F17/5068 ,  H01F17/0013 ,  H01F41/041 ,  H01F2017/002 ,  H01L21/76897 ,  H01L23/147 ,  H01L23/15 ,  H01L23/49822 ,  H01L23/49827 ,  H01L24/05 ,  H01L24/13 ,  H01L28/10 ,  H01L28/40 ,  H01L2224/0401 ,  H01L2224/05567 ,  H01L2224/13022 ,  H01L2924/10253 ,  H01L2924/10272 ,  H01L2924/10329 ,  H01L2924/10335 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19104 ,  H05K1/162 ,  H05K1/165 ,  H05K3/4605 ,  H01L2924/00

Abstract: An inductive device that includes a conductive via and a metal layer are disclosed. A particular method of forming an electronic device includes forming a metal layer that contacts a surface of a substrate. The substrate, including the surface, is formed from a substantially uniform dielectric material. The metal layer contacts a conductive via that extends at least partially within the substrate. The metal layer and the conductive via form at least a portion of an inductive device.

Abstract translation: 公开了一种包括导电通孔和金属层的电感器件。 形成电子器件的具体方法包括形成接触衬底表面的金属层。 包括表面的基底由基本均匀的电介质材料形成。 金属层接触至少部分地在衬底内延伸的导电通孔。 金属层和导电通孔形成电感器件的至少一部分。

公开(公告)号：US20140327508A1

公开(公告)日：2014-11-06

申请号：US13887633

申请日：2013-05-06

Applicant: QUALCOMM INCORPORATED

Inventor： Daeik D. Kim ,  Kangho Lee ,  David F. Berdy ,  Mario Francisco Velez ,  Jonghae Kim ,  Je-Hsiung Lan ,  Changhan Yun ,  Niranjan Sunil Mudakatte ,  Robert P. Mikulka

IPC: H01F29/14

CPC classification number: H01F21/06 ,  H01F21/08 ,  H01F27/255

Abstract: An inductor tunable by a variable magnetic flux density component is disclosed. A particular device includes an inductor. The device further includes a variable magnetic flux density component (VMFDC) positioned to influence a magnetic field of the inductor when a current is applied to the inductor.

Abstract translation: 公开了一种由可变磁通密度分量调节的电感器。 特定器件包括电感器。 该装置还包括可变磁通密度分量（VMFDC），其定位成当电流施加到电感器时影响电感器的磁场。

公开(公告)号：US20140197902A1

公开(公告)日：2014-07-17

申请号：US13798733

申请日：2013-03-13

Applicant: QUALCOMM INCORPORATED

Inventor： Chengjie Zuo ,  Jonghae Kim ,  Mario Francisco Velez ,  Je-Hsiung Lan ,  Daeik D. Kim ,  Changhan Yun ,  David F. Berdy ,  Robert P. Mikulka ,  Matthew M. Nowak ,  Xiangdong Zhang ,  Puay H. See

IPC: H03H7/46 ,  H03H3/00

CPC classification number: H03H7/461 ,  H01F2017/0026 ,  H01F2017/004 ,  H01L23/15 ,  H01L23/481 ,  H01L23/49827 ,  H01L23/5223 ,  H01L23/5227 ,  H01L23/64 ,  H01L23/66 ,  H01L2924/0002 ,  H03H3/00 ,  H03H7/1758 ,  H03H7/1766 ,  H03H7/1791 ,  H03H7/463 ,  H03H2001/0021 ,  H05K1/0233 ,  H05K1/0306 ,  H05K1/165 ,  H05K2201/09627 ,  H05K2201/09672 ,  H05K2201/10015 ,  H05K2201/10098 ,  Y10T29/49128 ,  H01L2924/00

Abstract: A diplexer includes a substrate having a set of through substrate vias. The diplexer also includes a first set of traces on a first surface of the substrate. The first traces are coupled to the through substrate vias. The diplexer further includes a second set of traces on a second surface of the substrate that is opposite the first surface. The second traces are coupled to opposite ends of the set of through substrate vias. The through substrate vias and the traces also operate as a 3D inductor. The diplexer also includes a capacitor supported by the substrate.

Abstract translation: 双工器包括具有一组通过衬底通孔的衬底。 双工器还包括在衬底的第一表面上的第一组迹线。 第一迹线耦合到贯穿衬底通孔。 双工器还包括与第一表面相对的在衬底的第二表面上的第二组迹线。 第二迹线耦合到该组通过衬底通孔的相对端。 贯通衬底通孔和迹线也作为3D电感器工作。 双工器还包括由基板支撑的电容器。