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公开(公告)号:US10357942B2
公开(公告)日:2019-07-23
申请号:US15206264
申请日:2016-07-09
Inventor: Kazuhiro Nishikawa , Naomi Nishiki , Hidetoshi Kitaura , Atsushi Tanaka , Kimiaki Nakaya , Henrik Rønnow
Abstract: A graphite-silicon composite, including: graphite; silicon; and an intermediate layer that is located between the graphite and the silicon, wherein the intermediate layer includes oxygen, carbon and silicon. Furthermore, provided is a method for producing a graphite-silicon composite, including: layering graphite and silicon; and heating the layered graphite and silicon while applying pressure to them, wherein, during heating the layered graphite and silicon while applying pressure to them, an oxygen concentration in the atmosphere is adjusted to 0.2 vol %, the applied pressure is adjusted to 24.5 MPa or higher, and the heating temperature is adjusted to 1260° C. or higher.
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公开(公告)号:US10170442B2
公开(公告)日:2019-01-01
申请号:US15797296
申请日:2017-10-30
Inventor: Kiyohiro Hine , Akio Furusawa , Hidetoshi Kitaura , Kazuki Sakai
IPC: H01L23/00 , B23K35/26 , C22C13/00 , H01L23/488 , H01L21/52
Abstract: A mount structure includes two members that are bonded to each other with a bonding material layer having a first interface layer and a second interface layer at the interfaces with the two members. The bonding material layer contains a first intermetallic compound and a stress relaxation material. The first intermetallic compound has a spherical, a columnar, or an oval spherical shape, and the same crystalline structure as the first interface layer and the second interface layer, and partly closes the space between the first interface layer and the second interface layer. The stress relaxation material contains tin as a main component, and fills around the first intermetallic compound.
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公开(公告)号:US10068869B2
公开(公告)日:2018-09-04
申请号:US14880942
申请日:2015-10-12
Inventor: Kiyohiro Hine , Akio Furusawa , Masato Mori , Taichi Nakamura , Hidetoshi Kitaura
Abstract: A mounting structure includes a BGA including a BGA electrode, a circuit board including a circuit board electrode, and a solder joining portion which is arranged on the circuit board electrode and is connected to the BGA electrode. The solder joining portion is formed of Cu having a content ratio in a range from 0.6 mass % to 1.2 mass %, inclusive, Ag having a content ratio in a range from 3.0 mass % to 4.0 mass %, inclusive, Bi having a content ratio in a range from 0 mass % to 1.0 mass %, inclusive, In, and Sn. A range of the content ratio of In is different according to the content ratio of Cu.
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公开(公告)号:US09981348B2
公开(公告)日:2018-05-29
申请号:US15267083
申请日:2016-09-15
Inventor: Kiyohiro Hine , Akio Furusawa , Hidetoshi Kitaura
CPC classification number: B23K35/262 , C22C13/00 , H05K1/181 , H05K3/3457 , H05K3/3463 , H05K2201/10022 , H05K2201/10636 , Y02P70/611
Abstract: A solder alloy is substantially Ag-free and has desirable neat-resistance fatigue characteristics in a high-temperature environment as high as 150° C., even when used for soldering of electronic components having no leads. The solder alloy contains Sb, In, Cu, and Bi, and Sn accounting for the remainder, and satisfies the following formulae: 0.5≤[Sb]≤1.25 0.66[Sb]+4.16≤[In]≤6.0 0.5≤[Cu]≤1.2 0.1≤[Bi]≤0.5, wherein [Sb], [In], [Cu], and [Bi] represent the contents of Sb, In, Cu, and Bi, respectively, in mass %.
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