公开(公告)号：US20160293654A1

公开(公告)日：2016-10-06

申请号：US15073611

申请日：2016-03-17

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： YUUKO TOMEKAWA ,  TOKUHIKO TAMAKI

IPC: H01L27/146 ,  H04N5/363

CPC classification number: H01L27/14643 ,  H01L27/14603 ,  H01L27/14609 ,  H01L27/14612 ,  H01L27/14623 ,  H01L27/14636 ,  H01L27/14665 ,  H01L27/307 ,  H04N5/23245 ,  H04N5/363

Abstract: An imaging device includes: a semiconductor substrate; a photoelectric conversion element including a first electrode, a second electrode, and a photoelectric conversion film, supported on the semiconductor substrate, and generating a signal by performing photoelectric conversion on incident light; a multilayer wiring structure including an upper wiring layer and a lower wiring layer provided between the semiconductor substrate and the second electrode; and a signal detection circuit provided in the semiconductor substrate and the multilayer wiring structure, including a signal detection transistor and a first capacitance element, and detecting the signal. The signal detection transistor includes a gate and a source region and a drain region, the first capacitance element includes a first lower electrode, a first upper electrode, and a dielectric film disposed therebetween, the upper wiring layer is disposed between the second electrode and the gate, and the upper wiring layer includes the first upper electrode.

Abstract translation: 一种成像装置包括：半导体衬底; 包括支撑在半导体衬底上的第一电极，第二电极和光电转换膜的光电转换元件，并通过对入射光进行光电转换来产生信号; 多层布线结构，包括设置在所述半导体基板和所述第二电极之间的上布线层和下布线层; 以及设置在半导体衬底和多层布线结构中的信号检测电路，包括信号检测晶体管和第一电容元件，并检测该信号。 信号检测晶体管包括栅极和源极区域和漏极区域，第一电容元件包括第一下部电极，第一上部电极和设置在其间的电介质膜，上部布线层设置在第二电极和第二电极之间， 栅极，上部布线层包括第一上部电极。

公开(公告)号：US20250081713A1

公开(公告)日：2025-03-06

申请号：US18950278

申请日：2024-11-18

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： SHUNSUKE ISONO ,  YUUKO TOMEKAWA ,  JUNJI HIRASE ,  RYOTA SAKAIDA

IPC: H10K39/32

Abstract: A method for manufacturing an imaging device includes forming a photoelectric conversion film such that a ratio of an overlapping area of the photoelectric conversion film and a support substrate in plan view to an area of the support substrate in plan view is greater than 0% and less than 100%. The method includes performing first etching to reduce an area of the photoelectric conversion film in plan view.

公开(公告)号：US20250024694A1

公开(公告)日：2025-01-16

申请号：US18898737

申请日：2024-09-27

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： KENICHI AOYAMA ,  HIROAKI IIJIMA ,  YUUKO TOMEKAWA

IPC: H10K39/32

Abstract: An imaging device includes a pixel electrode having a top surface and a bottom surface facing the top surface, a photoelectric conversion layer that is in contact with the top surface and converts light into electric charge, and a top electrode that faces the top surface of the pixel electrode with the photoelectric conversion layer interposed therebetween. The pixel electrode contains a nitride of a first metal, and a second metal different from the first metal. The nitride of the first metal is a main component of the pixel electrode. A concentration of the second metal in a first three-dimensional region including the top surface is higher than a concentration of the second metal in a second three-dimensional region including the bottom surface. The first three-dimensional region does not include the bottom surface, and the second three-dimensional region does not include the top surface.

公开(公告)号：US20240423002A1

公开(公告)日：2024-12-19

申请号：US18814437

申请日：2024-08-23

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： JUNJI HIRASE ,  HIDEYUKI UTSUMI ,  YUUKO TOMEKAWA ,  TAKANORI DOI ,  SHUNSUKE ISONO

IPC: H10K39/32

Abstract: A photoelectric converter includes a support face, and a photoelectric conversion film. The photoelectric conversion film is disposed at the support face. In a first cross-section parallel to a perpendicular direction that is perpendicular to the support face, the photoelectric conversion film has a first sloped face. In the first cross-section, the inclination angle of the first sloped face relative to a first parallel direction, which is parallel to the support face, is defined as a first slope angle. The first slope angle is greater than 0° and less than or equal to 5°.

公开(公告)号：US20240321916A1

公开(公告)日：2024-09-26

申请号：US18672455

申请日：2024-05-23

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： SHUNSUKE ISONO ,  HIDENARI KANEHARA ,  YUUKO TOMEKAWA

IPC: H01L27/146

CPC classification number: H01L27/14623 ,  H01L27/14636

Abstract: An imaging device includes a pixel section including pixels, a peripheral circuit section that is provided around the pixel section and that includes a peripheral circuit, and an intermediate layer that extends across the pixel section and the peripheral circuit section. The peripheral circuit section includes a light-shielding film located above the intermediate layer, at least one first conductive line that is located in the intermediate layer and that contains aluminum, and at least one barrier layer located between the at least one first conductive line and the light-shielding film.

公开(公告)号：US20220216259A1

公开(公告)日：2022-07-07

申请号：US17705226

申请日：2022-03-25

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： DAISUKE WAKABAYASHI ,  YUUKO TOMEKAWA

IPC: H01L27/146 ,  H04N5/3745

Abstract: An imaging device includes a pixel section and a peripheral circuitry section provided around the pixel section. The pixel section includes: a photoelectric conversion film; a top electrode located above the photoelectric conversion film; bottom electrodes that face the top electrode, with the photoelectric conversion film being disposed between the top electrode and the bottom electrodes; and a first light-shielding film that overlaps part of the photoelectric conversion film in a plan view and that is electrically connected to the top electrode. The first light-shielding film has electrical conductivity. The peripheral circuitry section includes peripheral circuitry and a second light-shielding film that overlaps at least part of the peripheral circuitry in the plan view. The first light-shielding film and the second light-shielding film are separated from each other.

公开(公告)号：US20190081130A1

公开(公告)日：2019-03-14

申请号：US16109809

申请日：2018-08-23

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： TAKAHIRO KOYANAGI ,  YUUKO TOMEKAWA

IPC: H01L49/02 ,  H01L27/146 ,  H01L27/30 ,  H01L21/3115

Abstract: A capacitor includes a first electrode, a second electrode facing the first electrode, and a dielectric layer disposed between the first and second electrodes and being in contact with each of the first and second electrodes. The dielectric layer contains at least one element selected from the group consisting of nitrogen and silicon.

公开(公告)号：US20230232644A1

公开(公告)日：2023-07-20

申请号：US18183049

申请日：2023-03-13

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： SHUNSUKE ISONO ,  YUUKO TOMEKAWA ,  RYOTA SAKAIDA

IPC: H10K39/32

CPC classification number: H10K39/32

Abstract: An imaging device includes a photoelectric conversion film and an electrode. The photoelectric conversion film converts light to charge. The electrode collects the charge. The electrode includes two or more layers. The two or more layers include a first layer containing tantalum nitride. An uppermost layer among the two or more layers contains a metal nitride.

公开(公告)号：US20230171976A1

公开(公告)日：2023-06-01

申请号：US18150835

申请日：2023-01-06

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： YUUKO TOMEKAWA ,  SHOTA YAMADA

IPC: H10K39/32

CPC classification number: H10K39/32

Abstract: An imaging device includes a first electrode, a second electrode, a photoelectric conversion layer, and a charge storage region. The photoelectric conversion layer is located between the first electrode and the second electrode. The charge storage region is electrically connected to the first electrode. An area of the charge storage region in plan view is smaller than or equal to 0.01 µm2.

公开(公告)号：US20220336534A1

公开(公告)日：2022-10-20

申请号：US17809040

申请日：2022-06-27

Applicant: Panasonic Intellectual Property Management Co.,Ltd.

Inventor： TAKAHIRO KOYANAGI ,  YUUKO TOMEKAWA

IPC: H01L27/30

Abstract: An imaging device includes at least one first pixel electrode, at least one second pixel electrode, a photoelectric converter continuously covering upper surfaces of the at least one first pixel electrode and the at least one second pixel electrode, a first counter electrode facing the at least one first pixel electrode, a second counter electrode facing the at least one second pixel electrode, and a sealing layer continuously covering upper surfaces of the first and second counter electrodes. In a plan view, a first portion of an upper surface of the photoelectric converter in an interelectrode region between the first counter electrode and the second counter electrode is more depressed than a second portion of the upper surface of the photoelectric converter in an overlap region overlapping the first counter electrode or the second counter electrode. The sealing layer is in contact with the photoelectric converter in the interelectrode region.