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公开(公告)号:US11456337B2
公开(公告)日:2022-09-27
申请号:US17222885
申请日:2021-04-05
Inventor: Manabu Nakata , Masumi Izuchi , Shinichi Machida , Yasunori Inoue
IPC: H04N5/33 , H01L27/30 , H04N5/374 , H04N9/04 , H04N5/369 , H04N9/07 , H01L27/28 , H01L51/00 , H01L51/42
Abstract: An imaging device includes at least one unit pixel cell including a photoelectric converter and a voltage application circuit. The photoelectric converter includes a first electrode, a light-transmitting second electrode, a first photoelectric conversion layer containing a first material and a second photoelectric conversion layer containing a second material. The impedance of the first photoelectric conversion layer is larger than the impedance of the second photoelectric conversion layer. The voltage application circuit applies a first voltage or a second voltage having a larger absolute value than the first voltage selectively between the first electrode and the second electrode.
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公开(公告)号:US10951839B2
公开(公告)日:2021-03-16
申请号:US16595292
申请日:2019-10-07
Inventor: Shinichi Machida , Masashi Murakami , Takeyoshi Tokuhara , Masaaki Yanagida , Sanshiro Shishido , Manabu Nakata , Masumi Izuchi
Abstract: An imaging apparatus includes a unit pixel including a pixel electrode; a counter electrode facing the pixel electrode; a photoelectric conversion layer disposed between the pixel electrode and the counter electrode; and a computing circuit that acquires a first signal upon a first voltage being applied between the pixel electrode and the counter electrode, the first signal corresponding to an image captured with visible light and infrared light and a second signal upon a second voltage being applied between the pixel electrode and the counter electrode, the second signal corresponding to an image captured with visible light, and generates a third signal by performing a computation using the first signal and the second signal, the third signal corresponding to an image captured with infrared light.
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公开(公告)号:US10461130B2
公开(公告)日:2019-10-29
申请号:US15938374
申请日:2018-03-28
Inventor: Takeyoshi Tokuhara , Shinichi Machida
Abstract: An imaging device includes: a photoelectric converter including first and second electrodes, a photoelectric conversion layer therebetween, and an electron-blocking layer between the first electrode and the photoelectric conversion layer; and a signal detection circuit connected to the first electrode. The photoelectric converter is adapted to be applied with a voltage between the first and second electrodes. An electron-blocking material in the electron-blocking layer has an ionization potential higher than both a work function of a conducting material in the first electrode and an ionization potential of a photoelectric conversion material in the photoelectric conversion layer, which allows the photoelectric converter to have a range of the voltage within which a density of current passing between the first and second electrodes when light is incident on the photoelectric conversion layer is substantially equal to that when no light is incident. The range of the voltage is 0.5 V or more.
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公开(公告)号:US10368027B2
公开(公告)日:2019-07-30
申请号:US16241714
申请日:2019-01-07
Inventor: Shinichi Machida , Takeyoshi Tokuhara , Manabu Nakata , Sanshiro Shishido , Masaaki Yanagida , Masumi Izuchi
Abstract: An imaging apparatus includes a unit pixel including a pixel electrode, a charge accumulation region electrically connected to the pixel electrode, and a signal detection circuit electrically connected to the charge accumulation region; a counter electrode facing the pixel electrode; a photoelectric conversion layer disposed between the electrodes; and a voltage supply circuit configured to selectively apply any one of first, second, and third voltages between the electrodes. The photoelectric conversion layer exhibits first and second wavelength sensitivity characteristics in a wavelength range when the voltage supply circuit applies the first and second voltages between the electrodes, respectively, and becomes insensitive to light in the wavelength range when the voltage supply circuit applies the third voltage between the electrodes.
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公开(公告)号:US10212379B2
公开(公告)日:2019-02-19
申请号:US15872016
申请日:2018-01-16
Inventor: Shinichi Machida , Takeyoshi Tokuhara , Manabu Nakata , Sanshiro Shishido , Masaaki Yanagida , Masumi Izuchi
Abstract: An imaging apparatus includes a unit pixel including a pixel electrode, a charge accumulation region electrically connected to the pixel electrode, and a signal detection circuit electrically connected to the charge accumulation region; a counter electrode facing the pixel electrode; a photoelectric conversion layer disposed between the electrodes; and a voltage supply circuit configured to selectively apply any one of first, second, and third voltages between the electrodes. The photoelectric conversion layer exhibits first and second wavelength sensitivity characteristics in a wavelength range when the voltage supply circuit applies the first and second voltages between the electrodes, respectively, and becomes insensitive to light in the wavelength range when the voltage supply circuit applies the third voltage between the electrodes.
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公开(公告)号:US12207483B2
公开(公告)日:2025-01-21
申请号:US17347460
申请日:2021-06-14
Inventor: Sanshiro Shishido , Takahiro Koyanagi , Yuuko Tomekawa , Shinichi Machida
Abstract: An imaging device includes a first pixel and a second pixel adjacent to the first pixel. Each of the first pixel and the second pixel includes a first electrode, a second electrode positioned on or above the first electrode and facing the first electrode, a photoelectric conversion layer positioned between the first electrode and the second electrode, and a first charge-blocking layer positioned between the first electrode and the photoelectric conversion layer. The first charge-blocking layer of the first pixel is separated from the first charge-blocking layer of the second pixel. The photoelectric conversion layer is disposed continuously to the first pixel and the second pixel. An area of the first charge-blocking layer of the first pixel is larger than an area of the first electrode of the first pixel in plan view.
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公开(公告)号:US12119362B2
公开(公告)日:2024-10-15
申请号:US17185129
申请日:2021-02-25
Inventor: Sanshiro Shishido , Shinichi Machida , Takeyoshi Tokuhara , Katsuya Nozawa
IPC: H01L27/14 , G02B5/20 , H01L27/146 , H01L31/0352 , H01L31/0384 , H01L27/142 , H01L31/0256
CPC classification number: H01L27/14625 , G02B5/208 , H01L27/14621 , H01L27/14627 , H01L27/14667 , H01L31/035218 , H01L31/035227 , H01L31/03845 , H01L27/142 , H01L27/14643 , H01L2031/0344
Abstract: A light sensor includes a photoelectric conversion layer and a long-pass filter that is disposed above the photoelectric conversion layer. The photoelectric conversion layer has a spectral sensitivity characteristic having a first peak at a first wavelength that is longer than a cut-on wavelength of the long-pass filter, and a spectral sensitivity of the photoelectric conversion layer at the cut-on wavelength is greater than or equal to 0% and less than or equal to 50% of a spectral sensitivity of the photoelectric conversion layer at the first wavelength.
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公开(公告)号:US11563057B2
公开(公告)日:2023-01-24
申请号:US17083376
申请日:2020-10-29
Inventor: Takeyoshi Tokuhara , Sanshiro Shishido , Yasuo Miyake , Shinichi Machida
IPC: H01L27/30 , H01L27/146
Abstract: An imaging device includes a semiconductor substrate including a first surface receiving light from outside, and a second surface opposite to the first surface, a first transistor on the second surface, and a photoelectric converter facing the second surface and receiving light through the semiconductor substrate. The semiconductor substrate is a silicon or silicon compound substrate. The photoelectric converter includes a first electrode electrically connected to the first transistor, a second electrode, and a photoelectric conversion layer located between the first and second electrodes and containing a material absorbing light having a wavelength 1.1 μm or longer. The first electrode is located between the second surface and the photoelectric conversion layer. A spectral sensitivity of the material in a region of 1.0 μm or longer and shorter than 1.1 μm is 0% to 5% of the maximum value of a spectral sensitivity of the material in 1.1 μm or longer.
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公开(公告)号:US11233965B2
公开(公告)日:2022-01-25
申请号:US16437975
申请日:2019-06-11
Inventor: Shinichi Machida , Takeyoshi Tokuhara , Manabu Nakata , Sanshiro Shishido , Masaaki Yanagida , Masumi Izuchi
Abstract: An imaging apparatus includes a unit pixel including a pixel electrode, a charge accumulation region electrically connected to the pixel electrode, and a signal detection circuit electrically connected to the charge accumulation region; a counter electrode facing the pixel electrode; a photoelectric conversion layer disposed between the electrodes; and a voltage supply circuit configured to selectively apply any one of first, second, and third voltages between the electrodes. The photoelectric conversion layer exhibits first and second wavelength sensitivity characteristics in a wavelength range when the voltage supply circuit applies the first and second voltages between the electrodes, respectively, and becomes insensitive to light in the wavelength range when the voltage supply circuit applies the third voltage between the electrodes.
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公开(公告)号:US10998380B2
公开(公告)日:2021-05-04
申请号:US16188327
申请日:2018-11-13
Inventor: Manabu Nakata , Masumi Izuchi , Shinichi Machida , Yasunori Inoue
IPC: H04N5/33 , H01L27/30 , H04N5/374 , H04N9/04 , H04N5/369 , H04N9/07 , H01L27/28 , H01L51/00 , H01L51/42
Abstract: An imaging device includes at least one unit pixel cell including a photoelectric converter and a voltage application circuit. The photoelectric converter includes a first electrode, a light-transmitting second electrode, a first photoelectric conversion layer containing a first material and a second photoelectric conversion layer containing a second material. The impedance of the first photoelectric conversion layer is larger than the impedance of the second photoelectric conversion layer. The voltage application circuit applies a first voltage or a second voltage having a larger absolute value than the first voltage selectively between the first electrode and the second electrode.
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