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    Image sensor with shared microlens and polarization pixel
    13.
    发明授权
    Image sensor with shared microlens and polarization pixel 有权

    公开(公告)号：US11367744B2

    公开(公告)日：2022-06-21

    申请号：US16704877

    申请日：2019-12-05

    Applicant: OmniVision Technologies, Inc.

    Inventor： Chin Poh Pang ,  Boyang Zhang ,  Guansong Liu ,  Peng Lin

    IPC: H01L27/146 ,  H04N5/369 ,  H04N5/378

    Abstract: An image sensor pixel comprises a subpixel and a polarization pixel. The subpixel includes a group of photodiodes disposed in semiconductor material, a shared microlens optically aligned over the group of photodiodes, and a subpixel color filter disposed between the group of photodiodes and the shared microlens. The polarization pixel includes a first photodiode disposed in the semiconductor material, an unshared microlens optically aligned over the first photodiode, and a polarization filter disposed between the first photodiode and the unshared microlens. The shared microlens has a first lateral area. The unshared microlens has a second lateral area less than the first lateral area of the shared microlens.

    Image sensor with shared microlens between multiple subpixels
    14.
    发明授权
    Image sensor with shared microlens between multiple subpixels 有权

    公开(公告)号：US11367743B2

    公开(公告)日：2022-06-21

    申请号：US16666129

    申请日：2019-10-28

    Applicant: OmniVision Technologies, Inc.

    Inventor： Xiaodong Yang ,  Guansong Liu ,  Peng Lin ,  Chin Poh Pang ,  Da Meng

    IPC: H01L27/146 ,  H04N5/232 ,  H04N9/04

    Abstract: An image sensor pixel includes a plurality of photodiodes, a shared microlens, and a plurality of microlenses. The plurality of photodiodes are arranged as a photodiode array with each of the plurality of photodiodes disposed within a semiconductor material. The shared microlens is optically aligned with a group of neighboring photodiodes included in the plurality of photodiodes. Each of the plurality of microlenses are optically aligned with an individual one of the plurality of photodiodes other than the group of neighboring photodiodes. The plurality of microlenses laterally surrounds the shared microlens.

    IMAGE SENSOR WITH SHARED MICROLENS
    17.
    发明申请
    IMAGE SENSOR WITH SHARED MICROLENS 有权

    公开(公告)号：US20210185286A1

    公开(公告)日：2021-06-17

    申请号：US16711237

    申请日：2019-12-11

    Applicant: OmniVision Technologies, Inc.

    Inventor： Chin Poh Pang ,  Guansong Liu ,  Xiaodong Yang ,  Boyang Zhang ,  Hongjun Li ,  Da Meng

    IPC: H04N9/04 ,  H04N5/378

    Abstract: An image sensor includes a plurality of photodiodes, a plurality of color filters, and a plurality of microlenses. The plurality of photodiodes are arranged as a photodiode array, each of the plurality of photodiodes disposed within respective portions of a semiconductor material with a first lateral area. The plurality of color filters are arranged as a color filter array optically aligned with the photodiode array. Each of the plurality of color filters having a second lateral area greater than the first lateral area. The plurality of microlenses are arranged as a microlens array optically aligned with the color filter array and the photodiode array. Each of the plurality of microlenses have a third later area greater than the first lateral area and less than the second lateral area.

    Image sensors for robust on chip phase detection, and associated system and methods
    18.
    发明授权
    Image sensors for robust on chip phase detection, and associated system and methods 有权
    图像传感器，用于强大的片上相位检测，以及相关的系统和方法

    公开(公告)号：US09485442B1

    公开(公告)日：2016-11-01

    申请号：US14714997

    申请日：2015-05-18

    Applicant: OmniVision Technologies,Inc.

    Inventor： Chengjun Li ,  Guansong Liu ,  Jizhang Shan ,  Chin Poh Pang

    IPC: H04N5/369 ,  H04N5/232 ,  H04N9/04

    CPC classification number: H04N5/3696 ,  H04N5/23212 ,  H04N9/045

    Abstract: An image sensor for on-chip phase detection includes a pixel array for capturing an image of a scene, wherein the pixel array has a plurality of horizontal phase-detection rows, each including phase-detection pixels for detecting horizontal change in the scene, and a plurality of vertical phase-detection columns, each including phase-detection pixels for detecting vertical change in the scene, and wherein each of the horizontal phase-detection rows intersects each of the vertical phase-detection columns. A phase-detection method includes generating a pair of horizontal line profiles using one of a plurality of phase-detection rows; generating a pair of vertical line profiles using one of a plurality of phase-detection columns intersecting with the one of a plurality of phase-detection rows; and determining phase shift associated with at least one arbitrarily oriented edge in a scene, based upon the pair of horizontal line profiles and the pair of vertical line profiles.

    Abstract translation: 一种用于片上相位检测的图像传感器包括用于捕获场景图像的像素阵列，其中，像素阵列具有多个水平相位检测行，每个水平相位检测行包括用于检测场景中的水平变化的相位检测像素，以及 多个垂直相位检测列，每个垂直相位检测列包括用于检测场景中的垂直变化的相位检测像素，并且其中每个水平相位检测行与每个垂直相位检测列相交。 相位检测方法包括使用多个相位检测行中的一个生成一对水平线轮廓; 使用与多个相位检测行中的一个相交叉的多个相位检测列中的一个生成一对垂直线轮廓; 以及基于所述一对水平线轮廓和所述一对垂直线轮廓来确定与场景中的至少一个任意取向的边缘相关联的相移。

    QUAD PHOTODIODE MICROLENS ARRANGEMENTS, AND ASSOCIATED SYSTEMS AND METHODS
    20.
    发明公开
    QUAD PHOTODIODE MICROLENS ARRANGEMENTS, AND ASSOCIATED SYSTEMS AND METHODS 审中-公开

    公开(公告)号：US20230395627A1

    公开(公告)日：2023-12-07

    申请号：US17832395

    申请日：2022-06-03

    Applicant: OMNIVISION TECHNOLOGIES, INC.

    Inventor： Xiaodong Yang ,  Sylvia Shuoyu Zhang ,  John Li ,  Chengming Liu ,  Guansong Liu

    IPC: H01L27/146

    CPC classification number: H01L27/14627 ,  H01L27/14645

    Abstract: Quad photodiode microlens arrangements, and associated systems and methods. In one embodiment, a plurality of pixels are arranged in rows and columns of a pixel array disposed in a semiconductor material. The plurality of pixels includes green (G) pixels, red (R) pixels, blue (B) pixels and clear (C) pixels. Each pixel comprises a plurality of photodiodes that are configured to receive incoming light through an illuminated surface of the semiconductor material. A plurality of small microlenses are distributed over individual photodiodes of clear (C) pixels. A plurality of large microlenses are distributed over individual green (G) pixels. A diameter of the small microlenses is smaller than a diameter of the large microlenses.

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