公开(公告)号：US10586825B2

公开(公告)日：2020-03-10

申请号：US16242924

申请日：2019-01-08

Applicant: OmniVision Technologies, Inc.

Inventor： Qin Wang ,  Gang Chen ,  Duli Mao

IPC: H01L27/148 ,  H01L27/30 ,  H01L27/146 ,  H01L23/00 ,  H01L21/768 ,  H01L27/32

Abstract: An image sensor includes a plurality of photodiodes disposed in a semiconductor material to convert image light into image charge, and a metal grid, including a metal shield that is coplanar with the metal grid, disposed proximate to a backside of the semiconductor material. The metal grid is optically aligned with the plurality of photodiodes to direct the image light into the plurality of photodiodes, and a contact pad is disposed in a trench in the semiconductor material. The contact pad is coupled to the metal shield to ground the metal shield.

公开(公告)号：US10304891B2

公开(公告)日：2019-05-28

申请号：US15873743

申请日：2018-01-17

Applicant: OmniVision Technologies, Inc.

Inventor： Qin Wang ,  Gang Chen ,  Duli Mao

IPC: H01L27/146 ,  H01L31/18

Abstract: An image sensor includes a semiconductor material including a plurality of photodiodes disposed in the semiconductor material. The image sensor also includes a first insulating material disposed proximate to a frontside of the semiconductor material, and an interconnect disposed in the first insulating material proximate to the frontside of the semiconductor material. A metal pad extends from a backside of the semiconductor material through the first insulating material and contacts the interconnect. A metal grid is disposed proximate to the backside of the semiconductor material, and the semiconductor material is disposed between the metal grid and the first insulating material disposed proximate to the frontside.

公开(公告)号：US10153310B2

公开(公告)日：2018-12-11

申请号：US15213082

申请日：2016-07-18

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Bowei Zhang ,  Vincent Venezia ,  Gang Chen ,  Dyson H. Tai ,  Duli Mao

IPC: H01L27/144 ,  H01L31/0232 ,  H01L31/107 ,  H01L27/146 ,  H01L31/02 ,  G01J1/44

Abstract: A photon detection device includes a single photon avalanche diode (SPAD) disposed in a semiconductor layer. A guard ring structure is disposed in the semiconductor layer surrounding the SPAD to isolate the SPAD. A well region is disposed in the semiconductor layer surrounding the guard ring structure and disposed along an outside perimeter of the photon detection device. A contact region is disposed in the well region only in a corner region of the outside perimeter such that there is no contact region disposed along side regions of the outside perimeter. A distance between an inside edge of the guard ring structure and the contact region in the corner region of the outside perimeter is greater than a distance between the inside edge of the guard ring structure and the side regions of the outside perimeter such that an electric field distribution is uniform around the photon detection device.

公开(公告)号：US10147754B2

公开(公告)日：2018-12-04

申请号：US15439793

申请日：2017-02-22

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Dyson H. Tai ,  Cunyu Yang ,  Gang Chen ,  Jing Ye ,  Xi-Feng Gao ,  Jiaming Xing

IPC: H01L27/00 ,  H01L27/146

Abstract: An image sensor includes a semiconductor material having a front side and a back side opposite the front side. The image sensor also includes a shallow trench isolation (STI) structure, an interlayer dielectric, an intermetal dielectric, and a contact area. The STI structure extends from the front side of the semiconductor material into the semiconductor material. The interlayer dielectric is disposed between the front side of the semiconductor material and the intermetal dielectric. The contact area is disposed proximate to a lateral edge of the semiconductor material. The contact area includes a metal interconnect disposed within the intermetal dielectric and a plurality of contact plugs at least partially disposed within the interlayer dielectric. The contact area also includes a contact pad. The plurality of contact plugs is coupled between the contact pad and the metal interconnect.

公开(公告)号：US10051211B2

公开(公告)日：2018-08-14

申请号：US14097843

申请日：2013-12-05

Applicant: OmniVision Technologies, Inc.

Inventor： Gang Chen ,  Duli Mao ,  Dyson Hsinchih Tai

IPC: H04N5/33 ,  H04N9/04 ,  H04N5/232

Abstract: An image sensor for capturing both visible light images and infrared light images includes a semiconductor substrate having length, width, and height, a plurality of visible light photodetectors disposed in the semiconductor substrate, and a plurality of combination light photodetectors disposed in the semiconductor substrate. Each of the plurality of visible light photodetectors has a respective depth in the height direction, and each of the plurality of combination light photodetectors has a respective depth in the height direction that is greater than the respective depth of each of the plurality of visible light photodetectors.

公开(公告)号：US20180182803A1

公开(公告)日：2018-06-28

申请号：US15873743

申请日：2018-01-17

Applicant: OmniVision Technologies, Inc.

Inventor： Qin Wang ,  Gang Chen ,  Duli Mao

IPC: H01L27/146 ,  H01L31/18

CPC classification number: H01L27/14636 ,  H01L27/14629 ,  H01L27/14643 ,  H01L27/14685 ,  H01L27/14689 ,  H01L31/18

Abstract: An image sensor includes a semiconductor material including a plurality of photodiodes disposed in the semiconductor material. The image sensor also includes a first insulating material disposed proximate to a frontside of the semiconductor material, and an interconnect disposed in the first insulating material proximate to the frontside of the semiconductor material. A metal pad extends from a backside of the semiconductor material through the first insulating material and contacts the interconnect. A metal grid is disposed proximate to the backside of the semiconductor material, and the semiconductor material is disposed between the metal grid and the first insulating material disposed proximate to the frontside.

公开(公告)号：US20180151609A1

公开(公告)日：2018-05-31

申请号：US15362402

申请日：2016-11-28

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Dyson H. Tai ,  Duli Mao ,  Vincent Venezia ,  Gang Chen ,  Chih-Wei Hsiung

IPC: H01L27/146 ,  H04N5/378

CPC classification number: H01L27/1463 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14643 ,  H04N5/378

Abstract: An image sensor includes a semiconductor material including a photodiode disposed in the semiconductor material and an insulating material. A surface of the semiconductor material is disposed between the insulating material and the photodiode. The image sensor also includes isolation structures disposed in the semiconductor material and in the insulating material, and the isolation structures extend from within the semiconductor material through the surface and into the insulating material. The isolation structures include a core material and a liner material. The liner material is disposed between the core material and the semiconductor material, and is also disposed between the insulating material and the core material.

公开(公告)号：US09986213B2

公开(公告)日：2018-05-29

申请号：US15197464

申请日：2016-06-29

Applicant: OmniVision Technologies, Inc.

Inventor： Gang Chen ,  Duli Mao ,  Dyson Hsin-Chih Tai

IPC: H04N9/083 ,  H01L27/146 ,  H04N5/369 ,  H04N9/04 ,  H04N5/225

CPC classification number: H04N9/083 ,  H01L27/14605 ,  H01L27/1462 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14645 ,  H04N5/2252 ,  H04N5/2253 ,  H04N5/2257 ,  H04N5/35563 ,  H04N5/3696 ,  H04N9/045

Abstract: An image sensor includes a substrate, a first set of sensor pixels formed on the substrate, and a second set of sensor pixels formed on the substrate. The sensor pixels of the first set are arranged in rows and columns and are configured to detect light within a first range of wavelengths (e.g., white light). The sensor pixels of the second set are arranged in rows and columns and are each configured to detect light within one of a set of ranges of wavelengths (e.g., red, green, and blue). Each range of wavelengths of the set of ranges of wavelengths is a subrange of said first range of wavelengths, and each pixel of the second set of pixels is smaller than each pixel of the first set of pixels.

公开(公告)号：US09967504B1

公开(公告)日：2018-05-08

申请号：US15480833

申请日：2017-04-06

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Sohei Manabe ,  Keiji Mabuchi ,  Takayuki Goto ,  Gang Chen

IPC: H04N5/374 ,  H04N5/378 ,  H01L27/146

CPC classification number: H04N5/378 ,  H01L27/14605 ,  H01L27/1463 ,  H01L27/14643 ,  H04N5/374

Abstract: A pixel circuit for use in an image sensor includes an unpinned photodiode disposed in a semiconductor material. The unpinned photodiode adapted to photogenerate charge carriers in response to incident light. A floating diffusion is disposed in the semiconductor and coupled to receive the charge carriers photogenerated in the unpinned photodiode. A transfer transistor is disposed in the semiconductor material and coupled between the unpinned photodiode and the floating diffusion. The transfer transistor is adapted to be switched on to transfer the charge carriers photogenerated in the unpinned photodiode to the floating diffusion. A boost capacitor is disposed over a surface of the semiconductor material proximate to the unpinned photodiode. The boost capacitor is coupled to receive a photodiode boost signal while the transfer transistor is switched on to further drive the charge carriers photogenerated in the unpinned photodiode to the floating diffusion.

公开(公告)号：US09966408B1

公开(公告)日：2018-05-08

申请号：US15791191

申请日：2017-10-23

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Duli Mao ,  Dajiang Yang ,  Gang Chen ,  Vincent Venezia ,  Dyson H. Tai

IPC: H01L21/00 ,  H01L27/146 ,  H01L21/265 ,  H01L29/10 ,  H01L29/08

CPC classification number: H01L27/14643 ,  H01L21/26513 ,  H01L27/14607 ,  H01L27/1461 ,  H01L27/14614 ,  H01L27/1463 ,  H01L27/14636 ,  H01L27/14689

Abstract: A method of image sensor fabrication includes forming a photodiode and a floating diffusion in a first semiconductor material, and removing part of an oxide layer disposed proximate to a seed area on a surface of the first semiconductor material. The method also includes depositing a second semiconductor material over the surface of the first semiconductor material, and annealing the first semiconductor material and second semiconductor material. A portion of the second semiconductor material is etched away to form part of a source follower transistor, and dopant is implanted into the second semiconductor material to form a first doped region, a third doped region, and a second doped region. The second doped region is laterally disposed between the first doped region and the third doped region, and the second doped region is a channel of the source follower transistor.