公开(公告)号：US20150107513A1

公开(公告)日：2015-04-23

申请号：US14580965

申请日：2014-12-23

申请人： Novellus Systems, Inc.

发明人： Shankar Swaminathan ,  Hu Kang ,  Adrien LaVoie

IPC分类号： C23C16/52 ,  C23C16/455 ,  C23C16/505

CPC分类号： C23C16/52 ,  C23C16/045 ,  C23C16/455 ,  C23C16/45523 ,  C23C16/505

摘要： A system for processing a substrate include a processing chamber including a pedestal to support a substrate and a controller configured to a) supply precursor to the processing chamber; b) purge the processing chamber; c) perform radio frequency (RF) plasma activation; d) purge the processing chamber; and e) prior to purging the processing chamber in at least one of (b) or (d), set a vacuum pressure of the processing chamber to a first predetermined pressure that is less than a vacuum pressure during at least one of (a) or (c) for a first predetermined period.

摘要翻译： 一种用于处理衬底的系统包括：处理室，包括用于支撑衬底的基座和被配置为a）将前体供给到处理室的处理室; b）吹扫处理室; c）执行射频（RF）等离子体激活; d）吹扫处理室; 以及e）在（b）或（d）中的至少一个中清洗处理室之前，将处理室的真空压力设定为在（a）中的至少一个期间小于真空压力的第一预定压力， 或（c）第一预定期间。

公开(公告)号：US20140209026A1

公开(公告)日：2014-07-31

申请号：US14243493

申请日：2014-04-02

申请人： Novellus Systems, Inc.

发明人： Adrien LaVoie ,  Mark J. Saly ,  Daniel Moser ,  Rajesh Odedra ,  Ravi Konjolia

IPC分类号： C23C16/52

CPC分类号： C23C16/52 ,  C23C16/045 ,  C23C16/345 ,  C23C16/4554 ,  C23C16/45553 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02211 ,  H01L21/02219 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/0234 ,  H01L21/02348 ,  H01L21/31116 ,  H01L21/76826 ,  H01L21/76829 ,  H01L21/76837 ,  H01L21/76898

摘要： An apparatus deposits a film on a substrate including a reaction chamber arranged on a substrate support. An inlet port delivers gas phase reactants to the reaction chamber. A plasma generator provides plasma to the reaction chamber. A controller is configured to flow a silicon-containing reactant from a precursor group consisting of di-tert-butyl diazidosilane, tris(dimethylamido)silylazide, and bis(tert-butylhydrazido)diethyl silane. The silicon-containing reactant is introduced in vapor phase into the reaction chamber. The controller flows a second reactant in vapor phase into the reaction chamber.

摘要翻译： 一种装置在包括布置在基板支撑件上的反应室的基板上沉积膜。 入口将气相反应物输送到反应室。 等离子体发生器将等离子体提供给反应室。 控制器被配置为使含硅反应物从由二叔丁基重氮基硅烷，三（二甲基氨基）甲硅烷基叠氮化物和双（叔丁基肼基）二乙基硅烷组成的前体基团流动。 将含硅反应物以气相导入反应室。 控制器将气相中的第二反应物流入反应室。

公开(公告)号：US10741458B2

公开(公告)日：2020-08-11

申请号：US15965628

申请日：2018-04-27

申请人： Novellus Systems, Inc.

发明人： Hu Kang ,  Shankar Swaminathan ,  Adrien LaVoie ,  Jon Henri

IPC分类号： H01L21/66 ,  H01L21/02 ,  C23C16/34 ,  C23C16/40 ,  C23C16/455

摘要： Methods and apparatus to form films on sensitive substrates while preventing damage to the sensitive substrate are provided herein. In certain embodiments, methods involve forming a bilayer film on a sensitive substrate that both protects the underlying substrate from damage and possesses desired electrical properties. Also provided are methods and apparatus for evaluating and optimizing the films, including methods to evaluate the amount of substrate damage resulting from a particular deposition process and methods to determine the minimum thickness of a protective layer. The methods and apparatus described herein may be used to deposit films on a variety of sensitive materials such as silicon, cobalt, germanium-antimony-tellerium, silicon-germanium, silicon nitride, silicon carbide, tungsten, titanium, tantalum, chromium, nickel, palladium, ruthenium, or silicon oxide.

公开(公告)号：US20180247875A1

公开(公告)日：2018-08-30

申请号：US15965628

申请日：2018-04-27

申请人： Novellus Systems, Inc.

发明人： Hu Kang ,  Shankar Swaminathan ,  Adrien LaVoie ,  Jon Henri

IPC分类号： H01L21/66 ,  H01L21/02 ,  C23C16/455 ,  C23C16/40 ,  C23C16/34

摘要： Methods and apparatus to form films on sensitive substrates while preventing damage to the sensitive substrate are provided herein. In certain embodiments, methods involve forming a bilayer film on a sensitive substrate that both protects the underlying substrate from damage and possesses desired electrical properties. Also provided are methods and apparatus for evaluating and optimizing the films, including methods to evaluate the amount of substrate damage resulting from a particular deposition process and methods to determine the minimum thickness of a protective layer. The methods and apparatus described herein may be used to deposit films on a variety of sensitive materials such as silicon, cobalt, germanium-antimony-tellerium, silicon-germanium, silicon nitride, silicon carbide, tungsten, titanium, tantalum, chromium, nickel, palladium, ruthenium, or silicon oxide.

公开(公告)号：US20170316988A1

公开(公告)日：2017-11-02

申请号：US15650662

申请日：2017-07-14

申请人： Novellus Systems, Inc.

发明人： Hu Kang ,  Shankar Swaminathan ,  Adrien LaVoie ,  Jon Henri

IPC分类号： H01L21/66 ,  H01L21/02 ,  C23C16/34 ,  C23C16/455 ,  C23C16/40

CPC分类号： H01L22/26 ,  C23C16/345 ,  C23C16/401 ,  C23C16/4554 ,  C23C16/45542 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02219 ,  H01L21/02274 ,  H01L21/0228 ,  H01L22/12 ,  H01L22/20

摘要： Methods and apparatus to form films on sensitive substrates while preventing damage to the sensitive substrate are provided herein. In certain embodiments, methods involve forming a bilayer film on a sensitive substrate that both protects the underlying substrate from damage and possesses desired electrical properties. Also provided are methods and apparatus for evaluating and optimizing the films, including methods to evaluate the amount of substrate damage resulting from a particular deposition process and methods to determine the minimum thickness of a protective layer. The methods and apparatus described herein may be used to deposit films on a variety of sensitive materials such as silicon, cobalt, germanium-antimony-tellerium, silicon-germanium, silicon nitride, silicon carbide, tungsten, titanium, tantalum, chromium, nickel, palladium, ruthenium, or silicon oxide.

公开(公告)号：US09390909B2

公开(公告)日：2016-07-12

申请号：US14194324

申请日：2014-02-28

申请人： Novellus Systems, Inc.

发明人： Frank L. Pasquale ,  Shankar Swaminathan ,  Adrien LaVoie ,  Nader Shamma ,  Girish Dixit

IPC分类号： H01L21/00 ,  H01L21/02 ,  C23C16/34 ,  C23C16/40 ,  C23C16/455 ,  H01L21/66 ,  H01L21/033

CPC分类号： H01L21/0337 ,  C23C16/345 ,  C23C16/401 ,  C23C16/402 ,  C23C16/405 ,  C23C16/4554 ,  C23C16/45542 ,  C23C16/505 ,  C23C16/56 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02186 ,  H01L21/02219 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/0273 ,  H01L21/0332 ,  H01L21/31144 ,  H01L22/12 ,  H01L22/20

摘要： Methods for depositing nanolaminate protective layers over a core layer to enable deposition of high quality conformal films over the core layer for use in advanced multiple patterning schemes are provided. In certain embodiments, the methods involve depositing a thin silicon oxide or titanium oxide film using plasma-based atomic layer deposition techniques with a low high frequency radio frequency (HFRF) plasma power, followed by depositing a conformal titanium oxide film or spacer with a high HFRF plasma power.

摘要翻译： 提供了在芯层上沉积纳米级保护层的方法，以使得能够在核心层上沉积高质量的保形膜以用于高级多重图案化方案。 在某些实施方案中，所述方法包括使用具有低高频射频（HFRF）等离子体功率的等离子体原子层沉积技术沉积薄氧化硅或氧化钛膜，然后沉积具有高的高分子量的共形氧化钛膜或间隔物 HFRF等离子体功率。

公开(公告)号：US09343296B2

公开(公告)日：2016-05-17

申请号：US14631637

申请日：2015-02-25

申请人： Novellus Systems, Inc.

发明人： Adrien LaVoie

IPC分类号： H01L21/205 ,  H01L21/02 ,  C23C16/32 ,  C23C16/36 ,  C23C16/455

CPC分类号： H01L21/0228 ,  C23C16/325 ,  C23C16/36 ,  C23C16/45525 ,  C23C16/45529 ,  C23C16/4554 ,  C23C16/45542 ,  C23C16/45553 ,  C23C16/52 ,  H01L21/02167 ,  H01L21/0217 ,  H01L21/02211 ,  H01L21/0226 ,  H01L21/02274

摘要： Disclosed herein are methods of forming SiC/SiCN film layers on surfaces of semiconductor substrates. The methods may include introducing a silicon-containing film-precursor and an organometallic ligand transfer reagent into a processing chamber, adsorbing the silicon-containing film-precursor, the organometallic ligand transfer reagent, or both onto a surface of a semiconductor substrate under conditions whereby either or both form an adsorption-limited layer, and reacting the silicon-containing film-precursor with the organometallic ligand transfer reagent, after either or both have formed the adsorption-limited layer. The reaction results in the forming of the film layer. In some embodiments, a byproduct is also formed which contains substantially all of the metal of the organometallic ligand transfer reagent, and the methods may further include removing the byproduct from the processing chamber. Also disclosed herein are semiconductor processing apparatuses for forming SiC/SiCN film layers.

公开(公告)号：US20150170900A1

公开(公告)日：2015-06-18

申请号：US14631637

申请日：2015-02-25

申请人： Novellus Systems, Inc.

发明人： Adrien LaVoie

IPC分类号： H01L21/02 ,  C23C16/36 ,  C23C16/32 ,  C23C16/455

CPC分类号： H01L21/0228 ,  C23C16/325 ,  C23C16/36 ,  C23C16/45525 ,  C23C16/45529 ,  C23C16/4554 ,  C23C16/45542 ,  C23C16/45553 ,  C23C16/52 ,  H01L21/02167 ,  H01L21/0217 ,  H01L21/02211 ,  H01L21/0226 ,  H01L21/02274

摘要： Disclosed herein are methods of forming SiC/SiCN film layers on surfaces of semiconductor substrates. The methods may include introducing a silicon-containing film-precursor and an organometallic ligand transfer reagent into a processing chamber, adsorbing the silicon-containing film-precursor, the organometallic ligand transfer reagent, or both onto a surface of a semiconductor substrate under conditions whereby either or both form an adsorption-limited layer, and reacting the silicon-containing film-precursor with the organometallic ligand transfer reagent, after either or both have formed the adsorption-limited layer. The reaction results in the forming of the film layer. In some embodiments, a byproduct is also formed which contains substantially all of the metal of the organometallic ligand transfer reagent, and the methods may further include removing the byproduct from the processing chamber. Also disclosed herein are semiconductor processing apparatuses for forming SiC/SiCN film layers.

摘要翻译： 这里公开了在半导体衬底的表面上形成SiC / SiCN膜层的方法。 该方法可以包括将含硅膜前体和有机金属配体转移试剂引入到处理室中，在半导体衬底的表面上将含硅膜前体，有机金属配体转移试剂或两者吸附到半导体衬底的表面上， 在形成吸附限制层之后，或两者之一或两者形成吸附限制层，并使含硅膜前体与有机金属配体转移试剂反应。 反应导致膜层的形成。 在一些实施方案中，还形成副产物，其含有基本上所有的有机金属配体转移试剂的金属，并且所述方法还可以包括从处理室除去副产物。 本文还公开了用于形成SiC / SiCN膜层的半导体处理装置。

公开(公告)号：US10008428B2

公开(公告)日：2018-06-26

申请号：US15650662

申请日：2017-07-14

申请人： Novellus Systems, Inc.

发明人： Hu Kang ,  Shankar Swaminathan ,  Adrien LaVoie ,  Jon Henri

IPC分类号： H01L21/66 ,  H01L21/02 ,  C23C16/455 ,  C23C16/34 ,  C23C16/40

CPC分类号： H01L22/26 ,  C23C16/345 ,  C23C16/401 ,  C23C16/4554 ,  C23C16/45542 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02219 ,  H01L21/02274 ,  H01L21/0228 ,  H01L22/12 ,  H01L22/20

摘要： Methods and apparatus to form films on sensitive substrates while preventing damage to the sensitive substrate are provided herein. In certain embodiments, methods involve forming a bilayer film on a sensitive substrate that both protects the underlying substrate from damage and possesses desired electrical properties. Also provided are methods and apparatus for evaluating and optimizing the films, including methods to evaluate the amount of substrate damage resulting from a particular deposition process and methods to determine the minimum thickness of a protective layer. The methods and apparatus described herein may be used to deposit films on a variety of sensitive materials such as silicon, cobalt, germanium-antimony-tellerium, silicon-germanium, silicon nitride, silicon carbide, tungsten, titanium, tantalum, chromium, nickel, palladium, ruthenium, or silicon oxide.

公开(公告)号：US20180158683A1

公开(公告)日：2018-06-07

申请号：US15874766

申请日：2018-01-18

申请人： Novellus Systems, Inc.

发明人： Frank L. Pasquale ,  Shankar Swaminathan ,  Adrien LaVoie ,  Nader Shamma ,  Girish A. Dixit

IPC分类号： H01L21/033 ,  H01L21/66 ,  C23C16/34 ,  H01L21/311 ,  H01L21/027 ,  H01L21/02 ,  C23C16/56 ,  C23C16/505 ,  C23C16/455 ,  C23C16/40

CPC分类号： H01L21/0337 ,  C23C16/345 ,  C23C16/401 ,  C23C16/402 ,  C23C16/405 ,  C23C16/4554 ,  C23C16/45542 ,  C23C16/505 ,  C23C16/56 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02186 ,  H01L21/02219 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/0273 ,  H01L21/0332 ,  H01L21/31144 ,  H01L22/12 ,  H01L22/20

摘要： Methods for depositing nanolaminate protective layers over a core layer to enable deposition of high quality conformal films over the core layer for use in advanced multiple patterning schemes are provided. In certain embodiments, the methods involve depositing a thin silicon oxide or titanium oxide film using plasma-based atomic layer deposition techniques with a low high frequency radio frequency (HFRF) plasma power, followed by depositing a conformal titanium oxide film or spacer with a high HFRF plasma power.