公开(公告)号：US20200058853A1

公开(公告)日：2020-02-20

申请号：US16554492

申请日：2019-08-28

Applicant: Newport Fab, LLC dba Jazz Semiconductor

Inventor： Gregory P. Slovin ,  Nabil EI-Hinnawy ,  David J. Howard ,  Jefferson E. Rose

IPC: H01L45/00

Abstract: A radio frequency (RF) switch includes a heating element, an aluminum nitride layer situated over the heating element, and a phase-change material (PCM) situated over the aluminum nitride layer. An inside segment of the heating element underlies an active segment of the PCM, and an intermediate segment of the heating element is situated between a terminal segment of the heating element and the inside segment of the heating element. The aluminum nitride layer situated over the inside segment of the heating element provides thermal conductivity and electrical insulation between the heating element and the active segment of the PCM. The aluminum, nitride layer extends into the intermediate segment of the heating element and provides chemical protection to the intermediate segment of the heating element, such that the intermediate segment of the heating element remains substantially unetched and with substantially same thickness as the inside segment.

公开(公告)号：US10566528B1

公开(公告)日：2020-02-18

申请号：US16221252

申请日：2018-12-14

Applicant: Newport Fab, LLC

Inventor： Nabil El-Hinnawy ,  Gregory P. Slovin ,  Michael J. DeBar ,  Jefferson E. Rose ,  David J. Howard

IPC: H01L21/00 ,  H01L45/00

Abstract: A radio frequency (RF) switch includes a heating element, a phase-change material (PCM) situated over the heating element, and PCM contacts situated over passive segments of the PCM. The heating element extends transverse to the PCM. The heating element can have a heater line underlying an active segment of the PCM. Alternatively, the heating element can have a split heater lines underlying an active segment of the PCM. The split heater lines increase an area of the active segment of the PCM and reduce a heater-to-PCM parasitic capacitance. A fan-out structure having fan-out metal can connect the heater line to a heater contact. The fan-out structure reduces heat generation outside the active segment of the PCM and reduces a heater contact-to-PCM parasitic capacitance. The fan-out structure can have dielectric segments interspersed between the fan-out metal to reduce dishing.

公开(公告)号：US10937960B2

公开(公告)日：2021-03-02

申请号：US16271505

申请日：2019-02-08

Applicant: Newport Fab, LLC

Inventor： Gregory P. Slovin ,  Nabil El-Hinnawy ,  Jefferson E. Rose ,  David J. Howard

IPC: H01L45/00

Abstract: A radio frequency (RF) switch includes a phase-change material (PCM), a heating element underlying an active segment of the PCM and extending outward and transverse to the PCM, a capacitive RF terminal, and an ohmic RF terminal. The capacitive RF terminal can include a first trench metal liner situated on a first passive segment of the PCM, and a dielectric liner separating the first trench metal liner from a first trench metal plug. The ohmic RF terminal can include a second trench metal liner situated on a second passive segment of the PCM, and a second trench metal plug ohmically connected to the second trench metal liner. Alternatively, the capacitive RF terminal and the ohmic RF terminal can include lower metal portions and upper metal portions. A MIM capacitor can be formed by the upper metal portion of the capacitive RF terminal, an insulator, and a patterned top plate.

公开(公告)号：US10833260B2

公开(公告)日：2020-11-10

申请号：US16709823

申请日：2019-12-10

Applicant: Newport Fab, LLC

Inventor： Jefferson E. Rose ,  Gregory P. Slovin ,  David J. Howard ,  Michael J. DeBar ,  Nabil El-Hinnawy

IPC: H01L47/00 ,  H01L45/00 ,  H01L23/66 ,  H01L23/525 ,  H01L21/768 ,  H01L23/522

Abstract: In fabricating a radio frequency (RF) switch, a phase-change material (PCM) and a heating element, underlying an active segment of the PCM and extending outward and transverse to the PCM, are provided. Lower portions of PCM contacts for connection to passive segments of the PCM are formed, wherein the passive segments extend outward and are transverse to the heating element. Upper portions of the PCM contacts are formed from a lower interconnect metal. Heating element contacts are formed cross-wise to the PCM contacts. The heating element contacts can comprise a top interconnect metal directly connecting with terminal segments of the heating element. The heating element contacts can comprise a top interconnect metal and intermediate metal segments for connecting with the terminal segments of the heating element.

公开(公告)号：US10811606B2

公开(公告)日：2020-10-20

申请号：US16732543

申请日：2020-01-02

Applicant: Newport Fab, LLC

Inventor： David J. Howard ,  Jefferson E. Rose ,  Gregory P. Slovin ,  Nabil El-Hinnawy ,  Michael J. DeBar

IPC: H01L45/00

Abstract: A radio frequency (RF) switch includes a phase-change material (PCM) and a heating element underlying an active segment of the PCM, the PCM and heating element being situated over a substrate. A contact dielectric is over the PCM. PCM contacts have upper portions and uniform plate slot lower portions. The uniform plate slot lower portions have a total plate resistance RPLATE, and a total plate slot interface resistance RPLATE-INT. The upper portions have a total capacitance CUPPER to the uniform plate slot lower portions, and the PCM has a total capacitance CPCM to the substrate. The uniform plate slot lower portions significantly reduce a product of (RPLATE+RPLATE-INT) and (CUPPER+CPCM). As an alternative to the uniform plate slot lower portions, PCM contacts have segmented lower portions. The segmented lower portions significantly reduce CUPPER.

公开(公告)号：US10686128B2

公开(公告)日：2020-06-16

申请号：US16274998

申请日：2019-02-13

Applicant: Newport Fab, LLC

Inventor： Nabil El-Hinnawy ,  Gregory P. Slovin ,  Jefferson E. Rose ,  David J. Howard

IPC: H01L45/00 ,  H01L23/48 ,  H01L23/522 ,  H01L23/525 ,  H01L23/66 ,  H01L23/00

Abstract: A semiconductor device includes a substrate and a phase-change material (PCM) radio frequency (RF) switch, having a heating element, a PCM situated over the heating element, and PCM contacts situated over passive segments of the PCM. The heating element extends transverse to the PCM and underlies an active segment of the PCM. In one approach, the PCM RF switch is situated over the substrate, and the substrate is a heat spreader for the PCM RF switch. An integrated passive device (IPD) is disposed in an interlayer dielectric above the PCM RF switch, and is a metal resistor, a metal-oxide-metal (MOM) capacitor, and/or and inductor. In another approach, the PCM RF switch is disposed in an interlayer dielectric above the IPD, and the IPD is a poly resistor and/or a capacitor.

公开(公告)号：US20200119266A1

公开(公告)日：2020-04-16

申请号：US16712752

申请日：2019-12-12

Applicant: Newport Fab, LLC dba Jazz Semiconductor

Inventor： Jefferson E. Rose ,  Gregory P. Slovin ,  David J. Howard ,  Michael J. DeBar ,  Nabil El-Hinnawy

IPC: H01L45/00 ,  H01L23/66

Abstract: In fabricating a radio frequency (RF) switch, a phase-change material (PCM) and a heating element, underlying an active segment of the PCM and extending outward and transverse to the PCM, are provided. Lower portions of PCM contacts for connection to passive segments of the PCM are formed, wherein the passive segments extend outward and are transverse to the heating element. Upper portions of the PCM contacts are formed from a lower interconnect metal. Heating element contacts are formed cross-wise to the PCM contacts. The heating element contacts can comprise a top interconnect metal directly connecting with terminal segments of the heating element. The heating element contacts can comprise a top interconnect metal and intermediate metal segments for connecting with the terminal segments of the heating element.

公开(公告)号：US20200083161A1

公开(公告)日：2020-03-12

申请号：US16685121

申请日：2019-11-15

Applicant: Newport Fab, LLC dba Jazz Semiconductor

Inventor： Nabil El-Hinnawy ,  Gregory P. Slovin ,  Jefferson E. Rose ,  David J. Howard

IPC: H01L23/522 ,  H01L45/00 ,  H01L23/66

Abstract: A radio frequency (RF) switch includes a phase-change material (PCM), a heating element underlying an active segment of the PCM and extending outward and transverse to the PCM, and RF terminals having lower metal portions and upper metal portions. At least one of the lower metal portions can be ohmically separated from and capacitively coupled to passive segments of the PCM, while the upper metal portions are ohmically connected to the lower metal portions. Alternatively, the lower metal portions can be ohmically connected to passive segments of the PCM, while a capacitor is formed in part by at least one of the upper metal portions. Alternatively, at least one of the RF terminals can have a trench metal liner separated from a trench metal plug by a dielectric liner. The trench metal liner can be ohmically connected to passive segments of the PCM, while the trench metal plug is ohmically separated from, but capacitively coupled to, the trench metal liner.

公开(公告)号：US20200083160A1

公开(公告)日：2020-03-12

申请号：US16683713

申请日：2019-11-14

Applicant: Newport Fab, LLC dba Jazz Semiconductor

Inventor： Nabil El-Hinnawy ,  Gregory P. Slovin ,  Jefferson E. Rose ,  David J. Howard

IPC: H01L23/522 ,  H01L45/00 ,  H01L23/66

Abstract: A radio frequency (RF) switch includes a phase-change material (PCM), a heating element underlying an active segment of the PCM and extending outward and transverse to the PCM, and RF terminals having lower metal portions and upper metal portions. At least one of the lower metal portions can be ohmically separated from and capacitively coupled to passive segments of the PCM, while the upper metal portions are ohmically connected to the lower metal portions. Alternatively, the lower metal portions can be ohmically connected to passive segments of the PCM, while a capacitor is formed in part by at least one of the upper metal portions. Alternatively, at least one of the RF terminals can have a trench metal liner separated from a trench metal plug by a dielectric liner. The trench metal liner can be ohmically connected to passive segments of the PCM, while the trench metal plug is ohmically separated from, but capacitively coupled to, the trench metal liner.

公开(公告)号：US20200083159A1

公开(公告)日：2020-03-12

申请号：US16681007

申请日：2019-11-12

Applicant: Newport Fab, LLC dba Jazz Semiconductor

Inventor： Nabil El-Hinnawy ,  Gregory P. Slovin ,  Jefferson E. Rose ,  David J. Howard

IPC: H01L23/522 ,  H01L45/00 ,  H01L23/66

Abstract: A radio frequency (RF) switch includes a phase-change material (PCM), a heating element underlying an active segment of the PCM and extending outward and transverse to the PCM, and RF terminals having lower metal portions and upper metal portions. At least one of the lower metal portions can be ohmically separated from and capacitively coupled to passive segments of the PCM, while the upper metal portions are ohmically connected to the lower metal portions. Alternatively, the lower metal portions can be ohmically connected to passive segments of the PCM, while a capacitor is formed in part by at least one of the upper metal portions. Alternatively, at least one of the RF terminals can have a trench metal liner separated from a trench metal plug by a dielectric liner. The trench metal liner can be ohmically connected to passive segments of the PCM, while the trench metal plug is ohmically separated from, but capacitively coupled to, the trench metal liner.