公开(公告)号：US20160201188A1

公开(公告)日：2016-07-14

申请号：US14914091

申请日：2014-10-10

Applicant: MITSUBISHI MATERIALS CORPORATION

Inventor： Satoru Mori ,  Shozo Komiyama

IPC: C23C14/34 ,  H01J37/34 ,  C22C9/00 ,  C22C9/06 ,  C22C9/01

Abstract: A sputtering target is provided for forming a protective film which is used for forming a protective film on a single surface or both surfaces of a Cu wiring film, the sputtering target including 5 to 15 mass % of Ni or Ni and Al in total (where the Ni content is 0.5 mass % or higher); 0.1 to 5.0 mass % of Mn; 0.5 to 7.0 mass % of Fe; and a balance including Cu and inevitable impurities

Abstract translation: 提供溅射靶，用于在Cu布线膜的单面或两面形成用于形成保护膜的保护膜，溅射靶总共包含5〜15质量％的Ni或Ni和Al（其中 Ni含量为0.5质量％以上） 0.1〜5.0质量％的Mn; 0.5〜7.0质量％的Fe; 余量包括Cu和不可避免的杂质

公开(公告)号：US20140227557A1

公开(公告)日：2014-08-14

申请号：US14090203

申请日：2013-11-26

Applicant: MITSUBISHI MATERIALS CORPORATION

Inventor： Satoru Mori ,  Souhei Nonaka

IPC: H01J37/34 ,  H05K1/09

CPC classification number: H01J37/3426 ,  H05K1/09 ,  H05K3/022 ,  H05K3/06 ,  H05K2201/0317 ,  H05K2201/0338 ,  Y10T428/1291

Abstract: A sputtering target for forming protective film according to the invention is used to form protective film on one surface or both surfaces of a Cu wiring film, and includes 8.0 to 11.0% by mass of Al, 3.0 to 5.0% by mass of Fe, 0.5 to 2.0% by mass of Ni and 0.5 to 2.0% by mass of Mn with a remainder of Cu and inevitable impurities. In addition, a laminated wiring film includes a Cu wiring film and protective film formed on one surface or both surfaces of the Cu wiring film, and the protective film is formed by using the above sputtering target.

Abstract translation: 根据本发明的用于形成保护膜的溅射靶用于在Cu布线膜的一个表面或两个表面上形成保护膜，并且包括8.0至11.0质量％的Al，3.0至5.0质量％的Fe，0.5 至2.0质量％的Ni和0.5〜2.0质量％的Mn，余量为Cu和不可避免的杂质。 此外，层叠布线膜包括Cu布线膜和形成在Cu布线膜的一个表面或两个表面上的保护膜，并且通过使用上述溅射靶形成保护膜。

公开(公告)号：US10889889B2

公开(公告)日：2021-01-12

申请号：US15754403

申请日：2016-08-03

Applicant: MITSUBISHI MATERIALS CORPORATION

Inventor： Satoru Mori ,  U Tani ,  Yuuji Sato ,  Fumitake Kikuchi ,  Isao Arai

IPC: C23C14/34 ,  C25C1/12 ,  C25C7/02 ,  C22F1/08 ,  C22C9/00

Abstract: A high purity copper sputtering target material includes Cu at a purity of 99.99998 mass % or more excluding O, H, N and C, wherein an Al content is 0.005 mass ppm or less, a Si content is 0.05 mass ppm or less, an Fe content is 0.02 mass ppm or less, a S content is 0.03 mass ppm or less, Cl content is 0.1 mass ppm or less, n O content is 1 mass ppm or less, H content is 1 mass ppm or less, a N content is 1 mass ppm or less, and a C content is 1 mass ppm or less.

公开(公告)号：US10351946B2

公开(公告)日：2019-07-16

申请号：US15027436

申请日：2013-10-07

Applicant: MITSUBISHI MATERIALS CORPORATION

Inventor： Kazunori Igarashi ,  Muneaki Watanabe ,  Yuuki Yoshida ,  Kouichi Ishiyama ,  Satoru Mori

IPC: C23C14/34 ,  H01J37/34 ,  C22C9/00 ,  B22F3/10 ,  C22C1/04 ,  B22F1/00 ,  C23C14/14

Abstract: Provided are a sputtering target composed of a Cu—Ga sintered compact that has a further reduced oxygen content and can suppress abnormal discharges, and a method for producing the same. The sintered compact has a component composition containing a Ga content of 20 at % or higher and less than 30 at % with the balance being Cu and inevitable impurities, and has an oxygen content of 100 ppm or lower and an average grain size of 100 μm or less, and exhibits the diffraction peaks assigned to the γ and ζ phases of CuGa as observed in X-ray diffraction, wherein the main peak intensity of the diffraction peaks assigned to the ζ phase is 10% or higher relative to that of the diffraction peaks assigned to the γ phase.

公开(公告)号：US10062552B2

公开(公告)日：2018-08-28

申请号：US14333812

申请日：2014-07-17

Applicant: MITSUBISHI MATERIALS CORPORATION

Inventor： Satoru Mori ,  Toshio Sakamoto ,  Kiyoyuki Ookubo

IPC: H01J37/34 ,  C23C14/34 ,  B22D7/00 ,  B22D11/108 ,  B22D11/00 ,  C22C1/02 ,  C22C9/00 ,  C22F1/08

CPC classification number: H01J37/3429 ,  B22D7/005 ,  B22D11/004 ,  B22D11/108 ,  C22C1/02 ,  C22C9/00 ,  C22F1/08 ,  C23C14/3414 ,  H01J37/3491

Abstract: A copper alloy sputtering target is formed by a copper alloy including the content of Ca being 0.3 to 1.7% by mass, the total content of Mg and Al being 5 ppm or less by mass, the content of oxygen being 20 ppm or less by mass, and the remainder is Cu and inevitable impurities. A manufacturing method of a copper alloy sputtering target comprises steps of: preparing a copper having purity of 99.99% or more by mass; melting the copper so as to obtain a molten copper; controlling components so as to obtain a molten metal having a predetermined component composition by the addition of Ca having a purity of 98.5% or more by mass into the molten copper and by melting the Ca; casting the molten metal so as to obtain an ingot; and performing stress relieving annealing after performing hot rolling to the ingot.

公开(公告)号：US20180237901A1

公开(公告)日：2018-08-23

申请号：US15754403

申请日：2016-08-03

Applicant: MITSUBISHI MATERIALS CORPORATION

Inventor： Satoru Mori ,  U Tani ,  Yuuji Sato ,  Fumitake Kikuchi ,  Isao Arai

IPC: C23C14/34 ,  C22C9/00 ,  C22F1/08 ,  C25C1/12 ,  C25C7/02

CPC classification number: C23C14/3414 ,  C22C9/00 ,  C22F1/08 ,  C25C1/12 ,  C25C7/02

Abstract: A high purity copper sputtering target material includes Cu at a purity of 99.99998 mass % or more excluding O, H, N and C, wherein an Al content is 0.005 mass ppm or less, a Si content is 0.05 mass ppm or less, an Fe content is 0.02 mass ppm or less, a S content is 0.03 mass ppm or less, Cl content is 0.1 mass ppm or less, n O content is 1 mass ppm or less, H content is 1 mass ppm or less, a N content is 1 mass ppm or less, and a C content is 1 mass ppm or less.

公开(公告)号：US20180066355A1

公开(公告)日：2018-03-08

申请号：US15560258

申请日：2016-03-10

Applicant: MITSUBISHI MATERIALS CORPORATION

Inventor： Yuki Yoshida ,  Toshiaki Ueda ,  Satoru Mori

IPC: C23C14/34 ,  C22C9/00 ,  B22F3/14

Abstract: A Cu—Ga alloy sputtering target of the present invention is made of a Cu—Ga alloy, in which a carbon concentration is 30 ppm by mass or lower. In an observed structure, an area ratio of crystal grains having a grain size of 10 μm or less is 5% to 50% and an area ratio of crystal grains having a grain size of 100 μm or more is 1% to 30%.

公开(公告)号：US11427888B2

公开(公告)日：2022-08-30

申请号：US17040654

申请日：2019-10-23

Applicant: MITSUBISHI MATERIALS CORPORATION

Inventor： Satoru Mori ,  Satoshi Kumagai ,  U Tani ,  Yuuji Sato

IPC: C23C14/14 ,  C22C9/00 ,  B22D7/00 ,  B22F3/16 ,  C23C14/34 ,  H01L21/285

Abstract: A sputtering target material contains one kind or two or more kinds selected from the group consisting of Ag, As, Pb, Sb, Bi, Cd, Sn, Ni, and Fe in a range of 5 massppm or more and 50 massppm or less, in terms of a total content; and a balance consisting of Cu and an inevitable impurity. In the sputtering target material, in a case in which an average crystal grain size calculated as an area average without twins is denoted by X1 (μm), and a maximum intensity of pole figure is denoted by X2, upon an observation with an electron backscatter diffraction method, Expression (1): 2500>19×X1+290×X2 is satisfied, a kernel average misorientation (KAM) of a crystal orientation measured by an electron backscatter diffraction method is 2.0° or less, and a relative density is 95% or more.

公开(公告)号：US10770274B2

公开(公告)日：2020-09-08

申请号：US15480733

申请日：2017-04-06

Applicant: MITSUBISHI MATERIALS CORPORATION

Inventor： Satoru Mori ,  Toshio Sakamoto ,  Kiyoyuki Ookubo

IPC: C23C14/34 ,  B22D7/00 ,  B22D11/108 ,  C22C1/02 ,  C22C9/00 ,  C22F1/08 ,  H01J37/34 ,  B22D11/00

Abstract: A copper alloy sputtering target is formed by a copper alloy including the content of Ca being 0.3 to 1.7% by mass, the total content of Mg and Al being 5 ppm or less by mass, the content of oxygen being 20 ppm or less by mass, and the remainder is Cu and inevitable impurities. A manufacturing method of a copper alloy sputtering target comprises steps of: preparing a copper having purity of 99.99% or more by mass; melting the copper so as to obtain a molten copper; controlling components so as to obtain a molten metal having a predetermined component composition by the addition of Ca having a purity of 98.5% or more by mass into the molten copper and by melting theCa; casting the molten metal so as to obtain an ingot; and performing stress relieving annealing after performing hot rolling to the ingot.

公开(公告)号：US10443113B2

公开(公告)日：2019-10-15

申请号：US14914091

申请日：2014-10-10

Applicant: MITSUBISHI MATERIALS CORPORATION

Inventor： Satoru Mori ,  Shozo Komiyama

IPC: C22C9/00 ,  C22C9/01 ,  C22C9/06 ,  C23C14/34 ,  H01J37/34 ,  C23C14/14 ,  C23C14/00 ,  C23C14/16 ,  C23C30/00 ,  C23C28/02 ,  C22C9/05

Abstract: A sputtering target is provided for forming a protective film which is used for forming a protective film on a single surface or both surfaces of a Cu wiring film, the sputtering target including 5 to 15 mass % of Ni or Ni and Al in total (where the Ni content is 0.5 mass % or higher); 0.1 to 5.0 mass % of Mn; 0.5 to 7.0 mass % of Fe; and a balance including Cu and inevitable impurities.