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1.发明申请公开(公告)号：US20140187409A1
公开(公告)日：2014-07-03
申请号：US14140667
申请日：2013-12-26
Applicant: MITSUBISHI MATERIALS CORPORATION
Inventor： Fumitake Kikuchi , Yoshinobu Nakada
IPC: H01J37/32
CPC classification number: H01J37/32798 , C01B33/02 , H01J37/32467 , H01J37/32495 , H01J37/3255
Abstract: The present invention relates to a silicon part and a method of producing the silicon part. The silicon part is not worn quickly and particle formation is suppressed even if it is positioned in the reaction chamber of a plasma etching apparatus. The silicon part for the plasma etching apparatus is made of any one selected from a group consisting of poly-crystalline silicon, mono-like silicon, and single-crystalline silicon. Also, the silicon part includes boron as a dopant in a range from 1×1018 atoms/cc or higher to 1×1020 atoms/cc or lower.
Abstract translation: 硅部件及其制造方法技术领域本发明涉及硅部件及其制造方法。 即使硅等离子体蚀刻装置的反应室内部位置，硅部分也不会很快磨损并且颗粒形成被抑制。 用于等离子体蚀刻装置的硅部分由从多晶硅，单晶硅和单晶硅组成的组中选择的任意一种制成。 此外，硅部分包括硼作为掺杂剂，范围为1×1018原子/ cc或更高至1×1020原子/ cc或更低。
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公开(公告)号：US20230135532A1
公开(公告)日：2023-05-04
申请号：US17911543
申请日：2021-02-02
Applicant: MITSUBISHI MATERIALS CORPORATION
Inventor： Fumitake Kikuchi , Kanji Kuba
IPC: C01B17/26
Abstract: A method for producing lithium sulfide includes: a preparation process (step S12) at which a raw material and a reducing agent are charged into a furnace, the raw material being mainly composed of lithium sulfate having a property of weight loss of 5% or more to 25% or less upon heating to 120° C.; and a temperature raising process (step S14) at which the raw material and the reducing agent are heated in the furnace to raise the temperature.
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Patent Agency Ranking
3.发明授权公开(公告)号：US09472380B2
公开(公告)日：2016-10-18
申请号：US14140667
申请日：2013-12-26
Applicant: MITSUBISHI MATERIALS CORPORATION
Inventor： Fumitake Kikuchi , Yoshinobu Nakada
CPC classification number: H01J37/32798 , C01B33/02 , H01J37/32467 , H01J37/32495 , H01J37/3255
Abstract: The present invention relates to a silicon part and a method of producing the silicon part. The silicon part is not worn quickly and particle formation is suppressed even if it is positioned in the reaction chamber of a plasma etching apparatus. The silicon part for the plasma etching apparatus is made of any one selected from a group consisting of poly-crystalline silicon, mono-like silicon, and single-crystalline silicon. Also, the silicon part includes boron as a dopant in a range from 1×1018 atoms/cc or higher to 1×1020 atoms/cc or lower.
Abstract translation: 硅部件及其制造方法技术领域本发明涉及硅部件及其制造方法。 即使硅等离子体蚀刻装置的反应室内部位置，硅部分也不会很快磨损并且颗粒形成被抑制。 用于等离子体蚀刻装置的硅部分由从多晶硅，单晶硅和单晶硅组成的组中选择的任意一种制成。 此外，硅部分包括硼作为掺杂剂，范围为1×1018原子/ cc或更高至1×1020原子/ cc或更低。
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公开(公告)号：US10889889B2
公开(公告)日：2021-01-12
申请号：US15754403
申请日：2016-08-03
Applicant: MITSUBISHI MATERIALS CORPORATION
Inventor： Satoru Mori , U Tani , Yuuji Sato , Fumitake Kikuchi , Isao Arai
Abstract: A high purity copper sputtering target material includes Cu at a purity of 99.99998 mass % or more excluding O, H, N and C, wherein an Al content is 0.005 mass ppm or less, a Si content is 0.05 mass ppm or less, an Fe content is 0.02 mass ppm or less, a S content is 0.03 mass ppm or less, Cl content is 0.1 mass ppm or less, n O content is 1 mass ppm or less, H content is 1 mass ppm or less, a N content is 1 mass ppm or less, and a C content is 1 mass ppm or less.
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公开(公告)号：US20180237901A1
公开(公告)日：2018-08-23
申请号：US15754403
申请日：2016-08-03
Applicant: MITSUBISHI MATERIALS CORPORATION
Inventor： Satoru Mori , U Tani , Yuuji Sato , Fumitake Kikuchi , Isao Arai
CPC classification number: C23C14/3414 , C22C9/00 , C22F1/08 , C25C1/12 , C25C7/02
Abstract: A high purity copper sputtering target material includes Cu at a purity of 99.99998 mass % or more excluding O, H, N and C, wherein an Al content is 0.005 mass ppm or less, a Si content is 0.05 mass ppm or less, an Fe content is 0.02 mass ppm or less, a S content is 0.03 mass ppm or less, Cl content is 0.1 mass ppm or less, n O content is 1 mass ppm or less, H content is 1 mass ppm or less, a N content is 1 mass ppm or less, and a C content is 1 mass ppm or less.
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公开(公告)号：US20240228281A9
公开(公告)日：2024-07-11
申请号：US18278866
申请日：2022-03-04
Applicant: MITSUBISHI MATERIALS CORPORATION
Inventor： Fumitake Kikuchi , Kanji Kuba , Shotaro Kakuki
IPC: C01B17/26 , H01M10/0562
CPC classification number: C01B17/26 , H01M10/0562 , C01P2002/72 , C01P2002/74 , C01P2006/40 , H01M2300/0068
Abstract: Provided is a more appropriate method of producing lithium sulfide having high ionic conductivity and no by-products generated. The method of producing lithium sulfide includes a temperature rising step (Step S14) of reducing lithium sulfate fed into a furnace in a state of heating to a temperature of more than 700° C. under an atmosphere of a reduced pressure of 0.05 MPa or less.
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公开(公告)号：US20240132351A1
公开(公告)日：2024-04-25
申请号：US18278866
申请日：2022-03-04
Applicant: MITSUBISHI MATERIALS CORPORATION
Inventor： Fumitake Kikuchi , Kanji Kuba , Shotaro Kakuki
IPC: C01B17/26 , H01M10/0562
CPC classification number: C01B17/26 , H01M10/0562 , C01P2002/72 , C01P2002/74 , C01P2006/40 , H01M2300/0068
Abstract: Provided is a more appropriate method of producing lithium sulfide having high ionic conductivity and no by-products generated. The method of producing lithium sulfide includes a temperature rising step (Step S14) of reducing lithium sulfate fed into a furnace in a state of heating to a temperature of more than 700° C. under an atmosphere of a reduced pressure of 0.05 MPa or less.
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