公开(公告)号：US20160028359A1

公开(公告)日：2016-01-28

申请号：US14874888

申请日：2015-10-05

Applicant: MediaTek Inc.

Inventor： Ming-Tzong YANG ,  Cheng-Chou HUNG ,  Tung-Hsing LEE ,  Wei-Che HUANG

IPC: H03H7/01

CPC classification number: H03H7/0115 ,  H01P1/20381 ,  H01P7/082 ,  H03H3/00

Abstract: An implementation of the invention is directed to a passive device cell having a substrate layer, and intermediary layer formed above the substrate layer, and a passive device formed above the intermediary layer. The intermediary layer includes a plurality of LC resonators and a plurality of segmented conductive lines, wherein the plurality of segmented conductive lines are disposed between the plurality of LC resonators.

Abstract translation: 本发明的实施例涉及一种无源器件单元，其具有衬底层，以及形成在衬底层上方的中间层，以及形成在中间层上方的无源器件。 中间层包括多个LC谐振器和多个分段导电线，其中多个分段导线设置在多个LC谐振器之间。

公开(公告)号：US20150115406A1

公开(公告)日：2015-04-30

申请号：US14284199

申请日：2014-05-21

Applicant: MediaTek Inc.

Inventor： Tzu-Hung LIN ,  Cheng-Chou HUNG

IPC: H01L49/02

CPC classification number: H01L28/10 ,  H01L23/5227 ,  H01L23/53238 ,  H01L23/66 ,  H01L24/03 ,  H01L24/05 ,  H01L24/08 ,  H01L24/11 ,  H01L24/13 ,  H01L24/45 ,  H01L24/48 ,  H01L2223/6677 ,  H01L2224/02181 ,  H01L2224/0345 ,  H01L2224/03912 ,  H01L2224/03914 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05009 ,  H01L2224/05022 ,  H01L2224/05124 ,  H01L2224/05166 ,  H01L2224/05181 ,  H01L2224/05186 ,  H01L2224/05572 ,  H01L2224/05582 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/08123 ,  H01L2224/08265 ,  H01L2224/11019 ,  H01L2224/1134 ,  H01L2224/11462 ,  H01L2224/1147 ,  H01L2224/11849 ,  H01L2224/13022 ,  H01L2224/1308 ,  H01L2224/13083 ,  H01L2224/131 ,  H01L2224/13147 ,  H01L2224/4502 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48463 ,  H01L2224/48824 ,  H01L2224/48839 ,  H01L2224/48844 ,  H01L2224/48847 ,  H01L2224/85007 ,  H01L2924/19011 ,  H01L2924/19042 ,  H01L2924/19051 ,  H01L2924/19103 ,  H01L2924/19104 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/014

Abstract: The invention provides a semiconductor structure. The semiconductor structure includes a substrate. A first passivation layer is disposed on the substrate. A conductive pad is disposed on the first passivation layer. A second passivation layer is disposed on the first passivation layer. A passive device is disposed on the conductive pad, passing through the second passivation layer. An organic solderability preservative film covers the passive device.

Abstract translation: 本发明提供一种半导体结构。 半导体结构包括基板。 第一钝化层设置在基板上。 导电焊盘设置在第一钝化层上。 第二钝化层设置在第一钝化层上。 无源器件设置在导电焊盘上，穿过第二钝化层。 有机可焊性防腐膜覆盖无源器件。

公开(公告)号：US20140312470A1

公开(公告)日：2014-10-23

申请号：US14320725

申请日：2014-07-01

Applicant: MediaTek Inc.

Inventor： Cheng-Chou HUNG ,  Tung-Hsing LEE ,  Yu-Hua HUANG ,  Ming-Tzong YANG

IPC: H01L23/00

CPC classification number: H01L23/562 ,  H01L23/564 ,  H01L23/585 ,  H01L27/0805 ,  H01L29/94 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A semiconductor device includes a semiconductor substrate of a first conductivity type having a chip region enclosed by a seal ring region. An insulating layer is on the semiconductor substrate. A seal ring structure is embedded in the insulating layer corresponding to the seal ring region. And, a plurality of doping regions are located beneath the first seal ring structure.

Abstract translation: 半导体器件包括具有由密封环区域包围的芯片区域的第一导电类型的半导体衬底。 绝缘层位于半导体衬底上。 密封环结构埋设在对应于密封圈区域的绝缘层中。 并且，多个掺杂区域位于第一密封环结构下方。