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公开(公告)号：US11888293B2
公开(公告)日：2024-01-30
申请号：US17247659
申请日：2020-12-18
Applicant: Lumentum Operations LLC
Inventor： Ajit Vijay Barve , Eric R. Hegblom
CPC classification number: H01S5/423 , H01S5/04257 , H01S5/18305 , H01S5/18361 , H01S5/18386 , H01S5/18394
Abstract: In some implementations, an emitter array may include a substrate, an epitaxial structure on the substrate, a plurality of bottom-emitting emitters defined in the epitaxial structure, a first electrical contact positioned at a top side of the epitaxial structure, a second electrical contact positioned at the top side of the epitaxial structure, and a metal layer disposed on a bottom side of the substrate. The metal layer may be electrically connected to the second electrical contact. The metal layer may include one or more openings for light emission of the plurality of bottom-emitting emitters.
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公开(公告)号：US11616343B2
公开(公告)日：2023-03-28
申请号：US16948763
申请日：2020-09-30
Applicant: Lumentum Operations LLC
Inventor： Jun Yang , Guowei Zhao , Matthew Glenn Peters , Eric R. Hegblom , Ajit Vijay Barve , Benjamin Kesler
Abstract: A VCSEL may include an n-type substrate layer and an n-type bottom mirror on a surface of the n-type substrate layer. The VCSEL may include an active region on the n-type bottom mirror and a p-type layer on the active region. The VCSEL may include an oxidation layer over the active region to provide optical and electrical confinement of the VCSEL. The VCSEL may include a tunnel junction over the p-type layer to reverse a carrier type of an n-type top mirror. Either the oxidation layer is on or in the p-type layer and the tunnel junction is on the oxidation layer, or the tunnel junction is on the p-type layer and the oxidation layer is on the tunnel junction. The VCSEL may include the n-type top mirror over the tunnel junction, a top contact layer over the n-type top mirror, and a top metal on the top contact layer.
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公开(公告)号：US11088508B2
公开(公告)日：2021-08-10
申请号：US15688218
申请日：2017-08-28
Applicant: Lumentum Operations LLC
Inventor： Albert Yuen , Ajit Vijay Barve , Guowei Zhao , Eric R. Hegblom
Abstract: In some implementations, a vertical cavity surface emitting laser (VCSEL) includes a substrate layer and epitaxial layers on the substrate layer. The epitaxial layers may include an active layer, a first mirror, a second mirror, and one or more oxidation layers. The active layer may be between the first mirror and the second mirror, and the one or more oxidation layers may be proximate to the active layer. The one or more oxidation layers may be configured to control beam divergence of a laser beam emitted by the VCSEL based on at least one of: a quantity of the one or more oxidation layers, a shape of the one or more oxidation layers, a thickness of the one or more oxidation layers, or a proximity of the one or more oxidation layers to the active layer.
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公开(公告)号：US10714903B2
公开(公告)日：2020-07-14
申请号：US16456480
申请日：2019-06-28
Applicant: Lumentum Operations LLC
Inventor： Albert Yuen , Ajit Vijay Barve
Abstract: In some implementations, a VCSEL array may include a plurality of VCSELs that each operates concurrently and emits light at a same wavelength. A first distance between a first pair of adjacent VCSELs, of the plurality of VCSELs, may be different from a second distance between a second pair of adjacent VCSELs of the plurality of VCSELs. The first pair of adjacent VCSELs may be located closer to a center of the VCSEL array than the second pair of adjacent VCSELs. At least one of temperature non-uniformity or optical power non-uniformity among the plurality of VCSELs may be reduced as compared to another VCSEL array, with a same physical footprint as the VCSEL array, comprising uniformly spaced VCSELs.
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公开(公告)号：US10574031B2
公开(公告)日：2020-02-25
申请号：US15638813
申请日：2017-06-30
Applicant: Lumentum Operations LLC
Inventor： Ajit Vijay Barve , Albert Yuen
Abstract: A surface emitting laser may include an isolation layer including a first center portion and a first plurality of outer portions extending from the first center portion, and a metal layer including a second center portion and a second plurality of outer portions extending from the second center portion. The metal layer may be formed on the isolation layer such that a first outer portion, of the second plurality of outer portions, is formed over one of the first plurality of outer portions. The surface emitting laser may include a passivation layer including a plurality of openings. An opening may be formed over the first outer portion. The surface emitting laser may include a plurality of oxidation trenches. An oxidation trench may be positioned at least partially between the first outer portion and a second outer portion of the second plurality of outer portions.
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Patent Agency Ranking
16.发明授权公开(公告)号：US11831129B2
公开(公告)日：2023-11-28
申请号：US17188701
申请日：2021-03-01
Applicant: Lumentum Operations LLC
Inventor： Ajit Vijay Barve , Mohammad Ali Shirazi Hosseini Dokht
CPC classification number: H01S5/18313 , H01S5/04254 , H01S5/04256 , H01S5/1071 , H01S5/18327 , H01S5/18347 , H01S5/423
Abstract: In some implementations, a surface emitting laser may have an emitter design with a short oxidation length and/or a large number of trenches. For example, the surface emitting laser may comprise a metallization layer comprising multiple extended portions extending outwards from a circumference of an inner ring portion, and multiple tabs extending laterally from the multiple extended portions in a partial ring shape. The surface emitting laser may further comprise multiple via openings connecting the metallization layer to a plating metal, where each via opening is positioned over a corresponding tab, of the multiple tabs. The surface emitting laser may comprise multiple oxidation trenches that are each formed in an angular gap between a pair of extended portions, of the multiple extended portions, such that the multiple tabs and the multiple via openings are exclusively outside outer radii of the multiple oxidation trenches.
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公开(公告)号：US11804695B2
公开(公告)日：2023-10-31
申请号：US17247660
申请日：2020-12-18
Applicant: Lumentum Operations LLC
Inventor： John Michael Miller , Lijun Zhu , Huanlin Zhu , Benjamin Kesler , Ajit Vijay Barve
IPC: H01S5/183 , F21S8/00 , F21Y115/30
CPC classification number: H01S5/18302 , F21S8/003 , F21Y2115/30
Abstract: In some implementations, an emitter module may include an emitter layer including a first emitter array configured to produce a first beam that provides flood illumination, and a second emitter array configured to produce a second beam that provides spot illumination. The emitter module may include a first optics layer, positioned in front of the emitter layer, that includes a first collimating lens positioned in front of the first emitter array, and a second collimating lens positioned in front of the second emitter array. The emitter module may include a second optics layer, positioned in front of the first optics layer, that includes an optical diffuser positioned in front of the first collimating lens, and a beamsplitter grating positioned in front of the second collimating lens.
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公开(公告)号：US11522344B2
公开(公告)日：2022-12-06
申请号：US16684097
申请日：2019-11-14
Applicant: Lumentum Operations LLC
Inventor： Ajit Vijay Barve , Benjamin Kesler , Matthew Glenn Peters
Abstract: A closely spaced emitter array may include a first emitter comprising a first plurality of structures and a second emitter, adjacent to the first emitter, comprising a second plurality of structures. The first emitter and the second emitter may be configured in the closely spaced emitter array such that different types of structures between the first plurality of structures and the second plurality of structures do not overlap while maintaining close spacing between the first emitter and the second emitter.
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公开(公告)号：US11482839B2
公开(公告)日：2022-10-25
申请号：US16366458
申请日：2019-03-27
Applicant: Lumentum Operations LLC
Inventor： Ajit Vijay Barve , Eric R. Hegblom
Abstract: A vertical cavity surface emitting laser (VCSEL) array may include a plurality of VCSELs. A size of an emission area of a first VCSEL, of the plurality of VCSELs, may be different from a size of an emission area of a second VCSEL of the plurality of VCSELs. The first VCSEL may be located closer to a center of the VCSEL array than the second VCSEL. A difference between the size of the emission area of the first VCSEL and the size of the emission area of the second VCSEL may be associated with reducing a difference in operating temperature between the first VCSEL and the second VCSEL, or reducing a difference in optical power output between the first VCSEL and the second VCSEL.
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公开(公告)号：US11239638B2
公开(公告)日：2022-02-01
申请号：US16244842
申请日：2019-01-10
Applicant: Lumentum Operations LLC
Inventor： Benjamin Kesler , Ajit Vijay Barve , Guowei Zhao
Abstract: A wafer may comprise a substrate layer and a plurality of vertical cavity surface emitting lasers (VCSELs) formed on or within the substrate layer. A respective trench-to-trench distance associated with the plurality of VCSELs may vary across the wafer based on a predicted variation of an oxidation rate of an oxidation layer across the wafer.
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