公开(公告)号：US20180235110A1

公开(公告)日：2018-08-16

申请号：US15435178

申请日：2017-02-16

Applicant: Lam Research Corporation

Inventor： Sudhakar GOPALAKRISHNAN ,  Peter REIMER ,  John HARUFF ,  John DAUGHERTY

IPC: H05K7/20 ,  H01L21/673 ,  H01L21/683 ,  H01L21/67

CPC classification number: H01L21/67248 ,  H01L21/67017 ,  H01L21/67109 ,  H01L21/6831

Abstract: A cooling apparatus is provided. At least one power electronic component is provided. A fluid tight enclosure surrounds the at least one power electronic component. An inert dielectric fluid at least partially fills the fluid tight container and is in contact with the at least one power electronic component.

公开(公告)号：US20180233387A1

公开(公告)日：2018-08-16

申请号：US15951333

申请日：2018-04-12

Applicant: LAM RESEARCH CORPORATION

Inventor： John DAUGHERTY ,  David TRUSSELL ,  Michael KELLOGG ,  Christopher PENA ,  Richard H. GOULD ,  Klay KUNKEL

IPC: H01L21/67 ,  H01L21/677

Abstract: A wafer transport assembly includes a first wafer transport module and a second wafer transport module. A buffer module, arranged between the first wafer transport module and the second wafer transport module, includes a first buffer stack and a second buffer stack. Outer sides of the first wafer transport module are coupled to first and second process modules, respectively, and outer sides of the second wafer transport module are coupled to third and fourth process modules, respectively. The first wafer transport module, the second wafer transport module, and the buffer module define a continuous wafer transport volume providing a controlled environment within the wafer transport assembly.

公开(公告)号：US20230092570A1

公开(公告)日：2023-03-23

申请号：US17795509

申请日：2021-02-16

Applicant: Lam Research Corporation

Inventor： Lin XU ,  David Joseph WETZEL ,  John DAUGHERTY ,  Hong SHIH ,  Satish SRINIVASAN ,  Yuanping SONG ,  Johnny PHAM ,  Yiwei SONG ,  Christopher KIMBALL

IPC: C25D7/04 ,  H01J37/32 ,  H01L21/683 ,  C25D3/44 ,  C25D5/48 ,  C25D11/08

Abstract: A method for making a component for use in a semiconductor processing chamber is provided. A component body is formed from a conductive material having a coefficient of thermal expansion of less than 10.0×10−6/K. A metal oxide layer is then disposed over a surface of the component body.

公开(公告)号：US20230088848A1

公开(公告)日：2023-03-23

申请号：US17792109

申请日：2021-01-21

Applicant: Lam Research Corporation

Inventor： Lin XU ,  David Joseph WETZEL ,  Satish SRINIVASAN ,  Robin KOSHY ,  John Michael KERNS ,  John DAUGHERTY

IPC: C23C24/08 ,  C23C4/11 ,  C23C4/08 ,  C04B41/50

Abstract: A component of a plasma processing chamber having a coating on at least one surface that comprises yttrium aluminum. The coating is an aerosol deposited coating from a powder mixture of an yttrium oxide powder and an aluminum-containing powder and having an yttrium to aluminum ratio of 4:1 to 1:4 by molar number. The coating can be annealed to form a porous ternary oxide.

公开(公告)号：US20230020387A1

公开(公告)日：2023-01-19

申请号：US17777656

申请日：2020-11-19

Applicant: LAM RESEARCH CORPORATION

Inventor： David Joseph WETZEL ,  Lin XU ,  John DAUGHERTY ,  John Michael KERNS ,  Satish SRINIVASAN ,  Robin KOSHY ,  Michael LOPEZ ,  Douglas DETERT

IPC: C23C16/40 ,  C23C4/11 ,  H01J37/32 ,  C23C16/56 ,  C23C14/08 ,  C23C14/58

Abstract: A method for forming a coating on a component of a substrate processing system includes arranging the component in a processing chamber and applying a ceramic material to form the coating on one or more surfaces of the component. The ceramic material is comprised of a mixture including a rare earth oxide and having a grain size of less than 150 nm and is applied while a temperature within the processing chamber is less than 400° C. The coating has a thickness of less than 30 μm. A heat treatment process is performed on the coated component in a heat treatment chamber. The heat treatment process includes increasing a temperature of the heat treatment chamber from a first temperature to a second temperature that does not exceed a melting temperature of the mixture over a first period and maintaining the second temperature for a second period.

公开(公告)号：US20220246404A1

公开(公告)日：2022-08-04

申请号：US17617271

申请日：2020-06-10

Applicant: Lam Research Corporation

Inventor： Benjamin Philip HEINE ,  Darrell EHRLICH ,  Robin KOSHY ,  Slobodan MITROVIC ,  John DAUGHERTY

IPC: H01J37/32 ,  H01L21/683 ,  C23C14/12 ,  C23C14/58

Abstract: A component for use in a plasma processing chamber is provided. A metal containing component body is provided. A sealant coating is over a surface of the metal containing component body, wherein the sealant coating comprises at least one of a silicone sealant, an organic sealant, or epoxy sealant, wherein the sealant coating is not covered and directly exposed to plasma in the plasma processing chamber.

公开(公告)号：US20180144909A1

公开(公告)日：2018-05-24

申请号：US15874744

申请日：2018-01-18

Applicant: Lam Research Corporation

Inventor： Lihua Li HUANG ,  Hong SHIH ,  Lin XU ,  John DAUGHERTY

IPC: H01J37/32 ,  C23C16/30 ,  C23C14/06

CPC classification number: H01J37/32495 ,  C23C14/06 ,  C23C16/30 ,  H01J37/32119 ,  H01J37/3244 ,  H01J37/32477 ,  H01J37/32504 ,  H01J37/32642 ,  H01J37/32715

Abstract: A method for coating a part body for use in a plasma processing chamber is provided. The part body is received into a chamber. At least part of a surface of the part body is coated by physical vapor deposition or chemical vapor deposition with a coating with a thickness of no more than 30 microns consisting essentially of a Lanthanide series or Group III or Group IV element in an oxyfluoride.

公开(公告)号：US20150337450A1

公开(公告)日：2015-11-26

申请号：US14817742

申请日：2015-08-04

Applicant: LAM RESEARCH CORPORATION

Inventor： Hong SHIH ,  Lin XU ,  John Michael KERNS ,  William CHARLES ,  John DAUGHERTY ,  Sivakami RAMANATHAN ,  Russell ORMOND ,  Robert G. O'NEILL ,  Tom STEVENSON

IPC: C25D11/02 ,  H01L21/67 ,  C23C28/00 ,  C23C24/00 ,  C25D11/16 ,  C25D11/12

CPC classification number: C25D11/026 ,  C23C16/4404 ,  C23C24/00 ,  C23C28/322 ,  C23C28/345 ,  C25D11/04 ,  C25D11/12 ,  C25D11/16 ,  H01L21/02274 ,  H01L21/3065 ,  H01L21/67017 ,  H01L21/67069 ,  H01L21/78 ,  Y10T428/12479 ,  Y10T428/12549 ,  Y10T428/1259

Abstract: A method of forming a dense oxide coating on an aluminum component of semiconductor processing equipment comprises cold spraying a layer of pure aluminum on a surface of the aluminum component to a predetermined thickness. A dense oxide coating is then formed on the layer of pure aluminum using a plasma electrolytic oxidation process, wherein the plasma electrolytic oxidation process causes the layer of pure aluminum to undergo microplasmic discharges, thus forming the dense oxide coating on the layer of pure aluminum on the surface of the aluminum component.

Abstract translation: 在半导体加工设备的铝部件上形成致密氧化物涂层的方法包括在铝部件的表面上冷却一层纯铝至预定厚度。 然后使用等离子体电解氧化工艺在纯铝层上形成致密的氧化物涂层，其中等离子体电解氧化工艺使纯铝层发生微量放电，从而在纯铝层上形成致密的氧化物涂层 铝部件的表面。

公开(公告)号：US20220344183A1

公开(公告)日：2022-10-27

申请号：US17860736

申请日：2022-07-08

Applicant: LAM RESEARCH CORPORATION

Inventor： David TRUSSELL ,  John DAUGHERTY ,  Christopher J. PENA ,  Michael C. KELLOGG ,  Klay KUNKEL ,  Richard H. GOULD

IPC: H01L21/67

Abstract: A substrate processing system configured to process substrates includes a substrate transport assembly that encloses a controlled environment defined within a continuous transport volume and at least two process modules coupled to the substrate transport assembly. The substrate transport assembly is configured to transport substrates to and from the at least two process modules through the continuous transport volume. At least two gas boxes are configured to deliver gas mixtures to the at least two process modules. An exhaust duct configured to selectively evacuate the at least two process modules through the at least two gas boxes. Surfaces of the at least two gas boxes include perforations configured to allow gases to flow from the at least two gas boxes into the exhaust duct.

公开(公告)号：US20220186354A1

公开(公告)日：2022-06-16

申请号：US17600031

申请日：2020-04-13

Applicant: Lam Research Corporation

Inventor： Ann ERICKSON ,  John DAUGHERTY ,  Robin KOSHY

IPC: C23C4/11 ,  C23C28/04 ,  C25D11/18 ,  C23C16/455 ,  C23C16/44

Abstract: A component for use as part of a plasma processing chamber is provided. The component has a component body adapted for use as part of a plasma processing chamber. A first ceramic coating of a ceramic material is on a surface of the component body, wherein the first ceramic coating has a first side adjacent to the component body and a second side spaced apart from the component body and wherein the first ceramic coating has a porosity and density. A second ceramic coating of the ceramic material is on the second side of the first ceramic coating, wherein the second ceramic coating has a porosity that is less than the porosity of the first ceramic coating and the second ceramic coating has a density that is greater than the density of the first ceramic coating.