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    System, method and apparatus for coordinating pressure pulses and RF modulation in a small volume confined process reactor
    11.
    发明授权
    System, method and apparatus for coordinating pressure pulses and RF modulation in a small volume confined process reactor 有权
    用于在小体积密闭过程反应器中协调压力脉冲和RF调制的系统，方法和装置

    公开(公告)号：US09184029B2

    公开(公告)日：2015-11-10

    申请号：US14016994

    申请日：2013-09-03

    Applicant: Lam Research Corporation

    Inventor： Rajinder Dhindsa ,  Harmeet Singh

    IPC: G01L21/30 ,  H01J37/32

    CPC classification number: H01J37/32137 ,  H01J37/32082 ,  H01J37/32449 ,  H01J37/32532 ,  H01J37/32623 ,  H01J37/32633 ,  H01J37/32816 ,  H01J37/32834

    Abstract: A plasma processing system and method includes a processing chamber, and a plasma processing volume included therein. The plasma processing volume having a volume less than the processing chamber. The plasma processing volume being defined by a top electrode, a substrate support surface opposing the surface of the top electrode and a plasma confinement structure including at least one outlet port. A conductance control structure is movably disposed proximate to the at least one outlet port and capable of controlling an outlet flow through the at least one outlet port between a first flow rate and a second flow rate, wherein the conductance control structure controls the outlet flow rate and an at least one RF source is modulated and at least one process gas flow rate is modulated corresponding to a selected processing state set by the controller during a plasma process.

    Abstract translation: 等离子体处理系统和方法包括处理室和其中包括的等离子体处理体积。 等离子体处理体积的体积小于处理室。 等离子体处理体积由顶部电极，与顶部电极的表面相对的衬底支撑表面和包括至少一个出口的等离子体限制结构限定。 导电控制结构可移动地设置在靠近所述至少一个出口端口处并且能够控制通过所述至少一个出口端口的出口流在第一流量和第二流量之间，其中所述电导控制结构控制所述出口流量 并且至少一个RF源被调制，并且至少一个处理气体流量是在等离子体处理期间由控制器设定的选择的处理状态调制的。

    Electrostatic chuck including declamping electrode and method of declamping
    12.
    发明授权
    Electrostatic chuck including declamping electrode and method of declamping 有权
    静电吸盘，包括电极和放电方法

    公开(公告)号：US09101038B2

    公开(公告)日：2015-08-04

    申请号：US14136826

    申请日：2013-12-20

    Applicant: Lam Research Corporation

    Inventor： Harmeet Singh ,  Christopher Kimball ,  Keith Gaff ,  Tyler Gloski

    IPC: H01L21/683 ,  H01T23/00 ,  H05F3/02

    CPC classification number: H01L21/6833

    Abstract: A semiconductor wafer processing apparatus for processing semiconductor wafers comprises a semiconductor wafer processing chamber in which a semiconductor wafer is processed, a process gas source in fluid communication with the processing chamber adapted to supply process gas into the processing chamber, a vacuum source adapted to exhaust process gas and byproducts of the processing from the processing chamber, and an electrostatic chuck assembly. The electrostatic chuck assembly comprises a support surface in a layer of ceramic material on which the semiconductor wafer is supported during processing of the wafer in the chamber, at least one electrostatic clamping electrode embedded in the layer of ceramic material, the at least one electrostatic clamping electrode operable to apply an electrostatic clamping force to the wafer on the support surface when an electrostatic clamping voltage is applied to the clamping electrode, and at least one declamping electrode embedded in the layer of ceramic material above the at least one electrostatic clamping electrode operable to provide a path for draining any residual charge between the wafer and the support surface when the electrostatic clamping voltage is no longer applied to the clamping electrode.

    Abstract translation: 一种用于处理半导体晶片的半导体晶片处理装置，包括处理半导体晶片的半导体晶片处理室，与处理室流体连通的处理气体源，其适于将处理气体供应到处理室中，适于排出的真空源 来自处理室的处理气体和副产物以及静电吸盘组件。 静电卡盘组件包括在陶瓷材料层中的支撑表面，其中半导体晶片在腔室中的晶片处理期间被支撑，至少一个静电夹持电极嵌入在陶瓷材料层中，该至少一个静电夹持 电极，其可操作以当静电钳位电压施加到所述夹持电极时将静电夹持力施加到所述支撑表面上的所述晶片;以及至少一个在所述至少一个静电夹持电极上方的陶瓷材料层中的所述电极， 当静电钳位电压不再施加到夹紧电极时，提供用于在晶片和支撑表面之间排出任何残留电荷的路径。

    Controlling ion energy within a plasma chamber
    16.
    发明授权
    Controlling ion energy within a plasma chamber 有权

    公开(公告)号：US10424461B2

    公开(公告)日：2019-09-24

    申请号：US16189329

    申请日：2018-11-13

    Applicant: Lam Research Corporation

    Inventor： Thorsten Lill ,  Harmeet Singh ,  Alex Paterson ,  Gowri Kamarthy

    IPC: H01J37/32

    Abstract: Systems and methods controlling ion energy within a plasma chamber are described. One of the systems includes an upper electrode coupled to a sinusoidal RF generator for receiving a sinusoidal signal and a nonsinusoidal RF generator for generating a nonsinusoidal signal. The system further includes a power amplifier coupled to the nonsinusoidal RF generator. The power amplifier is used for amplifying the nonsinusoidal signal to generate an amplified signal. The system includes a filter coupled to the power amplifier. The filter is used for filtering the amplified signal using a filtering signal to generate a filtered signal. The system includes a chuck coupled to the filter. The chuck faces at least a portion of the upper electrode and includes a lower electrode. The lower electrode is used for receiving the filtered signal to facilitate achieving ion energy at the chuck to be between a lower threshold and an upper threshold.

    Internal plasma grid for semiconductor fabrication
    17.
    发明授权
    Internal plasma grid for semiconductor fabrication 有权

    公开(公告)号：US10224221B2

    公开(公告)日：2019-03-05

    申请号：US15055439

    申请日：2016-02-26

    Applicant: Lam Research Corporation

    Inventor： Harmeet Singh ,  Thorsten Lill ,  Vahid Vahedi ,  Alex Paterson ,  Monica Titus ,  Gowri Kamarthy

    IPC: H01L21/3065 ,  H01L21/311 ,  H01L21/3213 ,  H01L21/67 ,  H01J37/32

    Abstract: The embodiments disclosed herein pertain to improved methods and apparatus for etching a semiconductor substrate. A plasma grid assembly is positioned in a reaction chamber to divide the chamber into upper and lower sub-chambers. The plasma grid assembly may include one or more plasma grids having slots of a particular aspect ratio, which allow certain species to pass through from the upper sub-chamber to the lower sub-chamber. Where multiple plasma grids are used, one or more of the grids may be movable, allowing for tenability of the plasma conditions in at least the lower sub-chamber. In some cases, an electron-ion plasma is generated in the upper sub-chamber. Electrons that make it through the grid to the lower sub-chamber are cooled as they pass through. In some cases, this results in an ion-ion plasma in the lower sub-chamber.

    Controlling ion energy within a plasma chamber
    19.
    发明授权
    Controlling ion energy within a plasma chamber 有权

    公开(公告)号：US10141163B2

    公开(公告)日：2018-11-27

    申请号：US15261738

    申请日：2016-09-09

    Applicant: Lam Research Corporation

    Inventor： Thorsten Lill ,  Harmeet Singh ,  Alex Paterson ,  Gowri Kamarthy

    IPC: H01J37/32

    Abstract: Systems and methods controlling ion energy within a plasma chamber are described. One of the systems includes an upper electrode coupled to a sinusoidal RF generator for receiving a sinusoidal signal and a nonsinusoidal RF generator for generating a nonsinusoidal signal. The system further includes a power amplifier coupled to the nonsinusoidal RF generator. The power amplifier is used for amplifying the nonsinusoidal signal to generate an amplified signal. The system includes a filter coupled to the power amplifier. The filter is used for filtering the amplified signal using a filtering signal to generate a filtered signal. The system includes a chuck coupled to the filter. The chuck faces at least a portion of the upper electrode and includes a lower electrode. The lower electrode is used for receiving the filtered signal to facilitate achieving ion energy at the chuck to be between a lower threshold and an upper threshold.

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