公开(公告)号：US07495482B2

公开(公告)日：2009-02-24

申请号：US11860123

申请日：2007-09-24

Applicant: Kenji Sakai ,  Yoshikazu Tanaka

Inventor： Kenji Sakai ,  Yoshikazu Tanaka

IPC: H03B1/00

CPC classification number: H02M1/08 ,  H03K17/162 ,  H03K17/284 ,  H03K17/6871 ,  H03K19/018507

Abstract: A semiconductor device according to the present invention is a semiconductor device for driving and controlling a power device in the high-potential side of two power devices connected in series between a main power source potential of a high potential and a main power source potential of a low potential, and is equipped with a pulse generating circuit for generating first and second pulse signals corresponding to the level transition to first and second states of input signals having a first state showing the conduction of the power device in the high-potential side and a second state showing the non-conduction of the power device in the high-potential side, respectively; a level shift circuit for obtaining first and second level-shifted pulse signals by level-shifting the first and second pulse signals to the high-potential side; an SR-type flip-flop circuit inputting the first level-shifted pulse signals from set input terminal and the second level-shifted pulse signals from reset input terminal; and a delay circuit for delaying the output of the SR-type flip-flop circuit by at least the pulse width of the first and second pulse signals.

Abstract translation: 根据本发明的半导体器件是用于驱动和控制在高电位的主电源电位和主电源电位之间串联连接的两个功率器件的高电位侧的功率器件的半导体器件 低电位，并且配备有脉冲发生电路，用于产生对应于具有第一状态的第一和第二状态的第一和第二状态的电平转变的第一和第二脉冲信号，该第一状态具有示出高电位侧的功率器件的导通和 分别表示高电位侧的功率器件的非导通的第二状态; 电平移位电路，用于通过将第一和第二脉冲信号电平移位到高电位侧来获得第一和第二电平移位脉冲信号; 输入来自设定输入端的第一电平移位脉冲信号和来自复位输入端的第二电平移位脉冲信号的SR型触发电路; 以及用于将SR型触发器电路的输出至少延迟第一和第二脉冲信号的脉冲宽度的延迟电路。

公开(公告)号：US07485162B2

公开(公告)日：2009-02-03

申请号：US10952672

申请日：2004-09-29

Applicant: Tsuyoshi Matsuda ,  Tatsuhiko Hirano ,  Junhui Oh ,  Atsunori Kawamura ,  Kenji Sakai

Inventor： Tsuyoshi Matsuda ,  Tatsuhiko Hirano ,  Junhui Oh ,  Atsunori Kawamura ,  Kenji Sakai

IPC: B24D3/02 ,  C09C1/68 ,  C09K3/14

CPC classification number: H01L21/7684 ,  C09G1/02 ,  C09K3/1463 ,  C23F3/04 ,  H01L21/3212

Abstract: A polishing composition of the present invention, to be used in polishing for forming wiring in a semiconductor device, includes: a specific surfactant; a silicon oxide; at least one selected from the group consisting of carboxylic acid and alpha-amino acid; a corrosion inhibitor; an oxidant; and water. This polishing composition is capable of suppressing the occurrence of the dishing.

Abstract translation: 本发明的抛光组合物，用于在半导体器件中形成布线的抛光中，包括：特定的表面活性剂; 氧化硅; 选自羧酸和α-氨基酸的至少一种; 腐蚀抑制剂; 氧化剂 和水。 该抛光组合物能够抑制凹陷的发生。

公开(公告)号：US20050287053A1

公开(公告)日：2005-12-29

申请号：US11168309

申请日：2005-06-29

Applicant: Kenji Sakai ,  Kunio Hirotani

Inventor： Kenji Sakai ,  Kunio Hirotani

IPC: B01J8/00 ,  B01J8/06 ,  C01B3/26 ,  C01B3/38 ,  F28F9/02

CPC classification number: B01J8/067 ,  B01J8/008 ,  B01J8/065 ,  B01J2208/00176 ,  B01J2208/00203 ,  B01J2208/00212 ,  B01J2208/00221 ,  B01J2208/0053 ,  C01B3/384 ,  C01B2203/0233 ,  C01B2203/0805 ,  F28F9/0229 ,  F28F9/0241 ,  Y02P20/124

Abstract: A device to reform a raw material gas into a synthesis gas rich in hydrogen and carbon monoxide is disclosed. The device includes a vessel, a floating head, a plurality of reaction tubes, inlets and outlets for raw material and heating gases, and a cooled fixed tube plate.

Abstract translation: 公开了一种将原料气体重整成富氢和一氧化碳的合成气体的装置。 该装置包括容器，浮动头，多个反应管，用于原料和加热气体的入口和出口以及冷却的固定管板。

公开(公告)号：US20050215060A1

公开(公告)日：2005-09-29

申请号：US11085612

申请日：2005-03-21

Applicant: Junhui Oh ,  Atsunori Kawamura ,  Tsuyoshi Matsuda ,  Tatsuhiko Hirano ,  Kenji Sakai ,  Katsunobu Hori

Inventor： Junhui Oh ,  Atsunori Kawamura ,  Tsuyoshi Matsuda ,  Tatsuhiko Hirano ,  Kenji Sakai ,  Katsunobu Hori

IPC: B24B37/00 ,  C09G1/02 ,  C09K3/14 ,  H01L21/00 ,  H01L21/304 ,  H01L21/321 ,  H01L21/4763 ,  C09K13/00

CPC classification number: C09G1/02 ,  C09K3/1463 ,  H01L21/3212

Abstract: A polishing composition contains a deterioration inhibitor for inhibiting deterioration of polishing capability of the polishing composition, an abrasive, and water. The deterioration inhibitor is at least one selected from polysaccharide and polyvinyl alcohol. The polysaccharide is starch, amylopectin, glycogen, cellulose, pectin, hemicellulose, pullulan, or elsinan. Among them, pullulan is preferable. The abrasive is at least one selected from aluminum oxide and silicon dioxide, preferably at least one selected from fumed silica, fumed alumina, and colloidal silica. The polishing composition can be suitably used in polishing for forming wiring a semiconductor device.

Abstract translation: 抛光组合物包含用于抑制抛光组合物，研磨剂和水的抛光能力劣化的劣化抑制剂。 劣化抑制剂是选自多糖和聚乙烯醇中的至少一种。 多糖是淀粉，支链淀粉，糖原，纤维素，果胶，半纤维素，支链淀粉或elsinan。 其中优素兰是优选的。 研磨剂是选自氧化铝和二氧化硅中的至少一种，优选选自热解法二氧化硅，热解法氧化铝和胶体二氧化硅中的至少一种。 抛光组合物可以适用于用于形成半导体器件布线的抛光。

公开(公告)号：US06838016B2

公开(公告)日：2005-01-04

申请号：US09985490

申请日：2001-11-05

Applicant: Kenji Sakai ,  Hiroshi Asano ,  Tadahiro Kitamura ,  Koji Ohno ,  Katsuyoshi Ina

Inventor： Kenji Sakai ,  Hiroshi Asano ,  Tadahiro Kitamura ,  Koji Ohno ,  Katsuyoshi Ina

IPC: B24B37/00 ,  C09G1/02 ,  C09K3/14 ,  H01L21/304 ,  H01L21/321 ,  H01L21/768 ,  C09K13/00 ,  C09K13/06 ,  H01L21/302

CPC classification number: H01L21/3212 ,  C09G1/02 ,  C09K3/1463 ,  H01L21/7684

Abstract: A polishing composition comprising the following components (a) to (g): (a) an abrasive which is at least one member selected from the group consisting of silicon dioxide, aluminum oxide, cerium oxide, zirconium oxide and titanium oxide, (b) a polyalkyleneimine, (c) at least one member selected from the group consisting of guinaldic acid and its derivatives, (d) at least one member selected from the group consisting of glycine, α-alanine, histidine and their derivatives, (e) at least one member selected from the group consisting of benzotriazole and its derivatives, (f) hydrogen peroxide, and (g) water.

Abstract translation: 一种抛光组合物，其包含以下组分（a）至（g）：（a）至少一种选自二氧化硅，氧化铝，氧化铈，氧化锆和氧化钛的组分的研磨剂，（b） 聚亚烷基亚胺，（c）选自桂皮酸及其衍生物的至少一种，（d）选自甘氨酸，α-丙氨酸，组氨酸及其衍生物中的至少一种，（e） 选自苯并三唑及其衍生物的组中的至少一种，（f）过氧化氢和（g）水。

公开(公告)号：US06814766B2

公开(公告)日：2004-11-09

申请号：US10214176

申请日：2002-08-08

Applicant: Koji Ohno ,  Kenji Sakai ,  Katsuyoshi Ina

Inventor： Koji Ohno ,  Kenji Sakai ,  Katsuyoshi Ina

IPC: C09G102

CPC classification number: H01L21/31053 ,  C09G1/02 ,  C23F3/06 ,  H01L21/3212

Abstract: A polishing composition for polishing a semiconductor device having at least a tungsten film and an insulating film, which comprises the following components (a) to (d): (a) silicon dioxide, (b) periodic acid, (c) at least one pH controlling agent selected from the group consisting of ammonia, potassium hydroxide, sodium hydroxide, ammonium periodate, potassium periodate and sodium periodate, and (d) water.

Abstract translation: 一种用于研磨至少具有钨膜和绝缘膜的半导体器件的抛光组合物，其包含以下组分（a）至（d）：（a）二氧化硅，（b）高碘酸，（c）至少一种 选自氨，氢氧化钾，氢氧化钠，高碘酸铵，高碘酸钾和高碘酸钠的pH控制剂，和（d）水。

公开(公告)号：US06773476B2

公开(公告)日：2004-08-10

申请号：US10200173

申请日：2002-07-23

Applicant: Kenji Sakai ,  Kazusei Tamai ,  Tadahiro Kitamura ,  Tsuyoshi Matsuda ,  Katsuyoshi Ina

Inventor： Kenji Sakai ,  Kazusei Tamai ,  Tadahiro Kitamura ,  Tsuyoshi Matsuda ,  Katsuyoshi Ina

IPC: C09G102

CPC classification number: H01L21/3212 ,  C09G1/02 ,  C09K3/1463 ,  C23F3/06

Abstract: A polishing composition comprising: (a) at least one abrasive selected from the group consisting of silicon dioxide and aluminum oxide, (b) at least one organic compound selected from the group consisting of a polyethylene oxide, a polypropylene oxide, a polyoxyethylene alkyl ether, a polyoxypropylene alkyl ether, a polyoxyethylenepolyoxypropylene alkyl ether and a polyoxyalkylene addition polymer having a C≡C triple bond, represented by the formula (1): wherein each of R1 to R6 is H or a C1-10 alkyl group, each of X and Y is an ethyleneoxy group or a propyleneoxy group, and each of m and n is a positive number of from 1 to 20, (c) at least one polishing accelerating compound selected from the group consisting of citric acid, oxalic acid, tartaric acid, glycine, &agr;-alanine and histidine, (d) at least one anticorrosive selected from the group consisting of benzotriazole, benzimidazole, triazole, imidazole and tolyltriazole, (e) hydrogen peroxide, and (f) water.

Abstract translation: 一种抛光组合物，其包含：（a）至少一种选自二氧化硅和氧化铝的研磨剂，（b）至少一种选自聚环氧乙烷，聚环氧丙烷，聚氧乙烯烷基醚 ，聚氧亚丙基烷基醚，聚氧乙烯聚氧丙烯烷基醚和具有C = C三键的聚氧化烯加成聚合物，由式（1）表示：其中R 1至R 6各自为H或C 1-10烷基，X Y是乙烯氧基或丙烯氧基，m和n分别为1〜20的正数，（c）至少一种选自柠檬酸，草酸，酒石酸 ，甘氨酸，α-丙氨酸和组氨酸，（d）至少一种选自苯并三唑，苯并咪唑，三唑，咪唑和甲苯基三唑的防腐剂，（e）过氧化氢和（f）水。

公开(公告)号：US06492771B2

公开(公告)日：2002-12-10

申请号：US09765406

申请日：2001-01-22

Applicant: Hirosumi Cho ,  Kenji Sakai

Inventor： Hirosumi Cho ,  Kenji Sakai

IPC: H01J1718

CPC classification number: H01J9/247 ,  H01J61/368 ,  H01J61/70

Abstract: A bulb comprises an airtight envelope having a filling gas therein. A conductive wire extends outwardly from the airtight envelope. A conductive pipe pin has the conductive wire passed therethrough, a predetermined welding portion, and a welded portion including a smooth surface. An outer diameter of the welded portion is no greater than the outer diameter of the pin. The welded portion may be formed in the pipe pin by the fluid of the melted conductive wire and predetermined welding portion flowing into the pipe pin and hardening.

Abstract translation: 灯泡包括其中具有填充气体的气密封套。 导线从气密的外壳向外延伸。 导电管销具有穿过其中的导电线，预定焊接部分和包括光滑表面的焊接部分。 焊接部的外径不大于销的外径。 焊接部分可以通过熔融导电线的流体和流入管销的预定焊接部分形成在管销中并硬化。

公开(公告)号：US6027398A

公开(公告)日：2000-02-22

申请号：US131690

申请日：1998-08-10

Applicant: Minoru Numoto ,  Kenji Sakai ,  Manabu Satoh ,  Hisashi Terashita

Inventor： Minoru Numoto ,  Kenji Sakai ,  Manabu Satoh ,  Hisashi Terashita

IPC: B24B41/06 ,  B24B49/16 ,  B24B5/00 ,  B24B29/00

CPC classification number: B24B37/30 ,  B24B41/06 ,  B24B49/16

Abstract: A wafer is polished while it is pressed against a polishing cloth through a pressure air layer, and a polished surface adjustment ring as well as the wafer are pressed against the polishing cloth. The wafer is polished in the state wherein a collapsing position of the polished surface adjustment ring with respect to the polishing cloth is set in such a way that the polishing pressure which is applied from the polishing cloth to the wafer can be constant.

Abstract translation: 在通过压力空气层压在抛光布上的同时对晶片进行抛光，并将抛光的表面调节环以及晶片压在抛光布上。 在抛光表面调节环相对于抛光布的塌缩位置被设置成使得从抛光布施加到晶片的抛光压力可以是恒定的状态下，抛光晶片。

公开(公告)号：US5931725A

公开(公告)日：1999-08-03

申请号：US899759

申请日：1997-07-24

Applicant: Takao Inaba ,  Masaaki Oguri ,  Kenji Sakai ,  Minoru Numoto ,  Hisashi Terashita

Inventor： Takao Inaba ,  Masaaki Oguri ,  Kenji Sakai ,  Minoru Numoto ,  Hisashi Terashita

IPC: B24B37/005 ,  B24B37/04 ,  B24B37/30 ,  B24B37/32 ,  B24B53/00 ,  B24B53/017 ,  B24B57/02 ,  H01L21/304 ,  H01L21/306 ,  B24B7/22

CPC classification number: B24B53/017 ,  B24B37/04 ,  B24B57/02 ,  H01L21/30625

Abstract: A semiconductor wafer is held by a wafer mount plate, which is loosely inserted into a housing. An air chamber is formed between the wafer mount plate and the housing. A retainer ring encloses the semiconductor wafer, and the semiconductor wafer as well as the retainer ring contacts with a polishing pad. An roughness is formed at the bottom of the retainer ring so as to dress the polishing pad. Polishing liquid is supplied to the inside of the retainer ring. Thus, the polishing pressure can be uniformly applied and the polishing liquid can be uniformly supplied on the whole surface of the semiconductor wafer, and the polishing for the semiconductor wafer and the dressing for the polishing pad can be performed at the same time.

Abstract translation: 半导体晶片由松散地插入壳体中的晶片安装板保持。 在晶片安装板和壳体之间形成空气室。 保持环围绕半导体晶片，并且半导体晶片以及保持环与抛光垫接触。 在保持环的底部形成粗糙度，以便打磨抛光垫。 抛光液被供应到保持环的内部。 因此，可以均匀地施加抛光压力，并且可以在半导体晶片的整个表面上均匀地供应抛光液，并且可以同时执行用于半导体晶片的抛光和抛光垫的修整。