公开(公告)号：US11205466B2

公开(公告)日：2021-12-21

申请号：US17091103

申请日：2020-11-06

Applicant: KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Byong Guk Park ,  Seung Heon Baek ,  Kyung Woong Park

IPC: G11C11/00 ,  G11C11/16 ,  G11C11/18 ,  G11C11/56 ,  H01L27/22 ,  H01L43/08 ,  H03K19/18 ,  H01L43/06 ,  H03K19/20

Abstract: The present invention relates to a semiconductor device. The semiconductor device based on the spin orbit torque (SOT) effect, according to an example of the present invention, comprises the first electrode; and the first cell and the second cell connected to the first electrode, wherein the first and the second cells are arranged on the first electrode separately; the magnetic tunnel junction (MTJ) having a free magnetic layer and a pinned magnetic layer with a dielectric layer in between them; the magnetization direction of the free magnetic layer is changed when the current applied on the first electrode exceeds critical current value of each cell; and the critical current value of the first cell is different from that of the second cell.

公开(公告)号：US10861526B2

公开(公告)日：2020-12-08

申请号：US16285948

申请日：2019-02-26

Applicant: KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Byong Guk Park ,  Seung Heon Baek ,  Kyung Woong Park

IPC: G11C11/00 ,  G11C11/16 ,  G11C11/18 ,  G11C11/56 ,  H01L27/22 ,  H01L43/08 ,  H03K19/18 ,  H01L43/06 ,  H03K19/20

Abstract: The present invention relates to a semiconductor device. The semiconductor device based on the spin orbit torque (SOT) effect, according to an example of the present invention, comprises the first electrode; and the first cell and the second cell connected to the first electrode, wherein the first and the second cells are arranged on the first electrode separately; the magnetic tunnel junction (MTJ) having a free magnetic layer and a pinned magnetic layer with a dielectric layer in between them; the magnetization direction of the free magnetic layer is changed when the current applied on the first electrode exceeds critical current value of each cell; and the critical current value of the first cell is different from that of the second cell.