公开(公告)号：US20150123667A1

公开(公告)日：2015-05-07

申请号：US14589728

申请日：2015-01-05

Applicant: KLA-Tencor Corporation

Inventor： Richard W. Solarz

IPC: G01R31/44 ,  H01L33/44 ,  H01L33/32 ,  G01N21/66 ,  G01N21/71

CPC classification number: G01R31/44 ,  G01N21/66 ,  G01N21/71 ,  H01L33/32 ,  H01L33/44 ,  H05B33/10

Abstract: A method of performing a hot test of a packaged phosphor converted light-emitting diode (pc-LED) includes selectively heating portions of the phosphor layer using a laser to provide a predetermined temperature gradient in the phosphor layer. The selective heating can directly heat the silicone in a silicone-based phosphor layer, or directly heat the active ion(s) of the phosphor in a Lumiramic™-based phosphor or even the active ion(s) of a silicone-based phosphor layer. A current is applied to the InGaN film to establish a predetermined temperature at the InGaN film junction, the film junction being adjacent to the phosphor layer. Photometric measurements are performed on the LED after the selective heating and during the applied electroluminescent current. This method quickly establishes the temperatures and temperature gradients in the LED consistent with those of an operating, product-level LED, thereby ensuring accurate binning of the LED.

Abstract translation: 包装的磷光体转换发光二极管（pc-LED）的热测试方法包括使用激光选择性地加热荧光体层的一部分，以在荧光体层中提供预定的温度梯度。 选择性加热可以直接加热硅氧烷基荧光体层中的硅氧烷，或直接加热基于Lumiramic TM的荧光体中的荧光体的活性离子，或甚至加热硅氧烷基荧光体层的活性离子 。 对InGaN膜施加电流以在InGaN膜结处建立预定温度，膜结与磷光体层相邻。 在选择性加热和施加的电致发光电流之后，对LED进行光度测量。 该方法快速地将LED的温度和温度梯度与操作的产品级LED的温度梯度相一致，从而确保了LED的精确的分级。

公开(公告)号：US20140217299A1

公开(公告)日：2014-08-07

申请号：US14242802

申请日：2014-04-01

Applicant: KLA-Tencor Corporation

Inventor： Yung-Ho Chuang ,  Richard W. Solarz ,  David R. Shafer ,  Bin-Ming Benjamin Tsai ,  David L. Brown

IPC: G01N21/95

CPC classification number: G01N21/95 ,  G01N21/8806 ,  G01N21/9501 ,  G01N21/956 ,  G01N2021/95676 ,  G01N2201/068 ,  G03F1/84 ,  G03F7/70616 ,  H05G2/008

Abstract: Inspection of EUV patterned masks, blank masks, and patterned wafers generated by EUV patterned masks requires high magnification and a large field of view at the image plane. An EUV inspection system can include a light source directed to an inspected surface, a detector for detecting light deflected from the inspected surface, and an optic configuration for directing the light from the inspected surface to the detector. In particular, the detector can include a plurality of sensor modules. Additionally, the optic configuration can include a plurality of mirrors that provide magnification of at least 100× within an optical path less than 5 meters long. In one embodiment, the optical path is approximately 2-3 meters long.

Abstract translation: 对EUV图案化掩模，空白掩模和由EUV图案化掩模生成的图案化晶片的检查需要高倍率和在图像平面上的大视场。 EUV检查系统可以包括指向检查表面的光源，用于检测从被检查表面偏转的光的检测器和用于将来自被检查表面的光引导到检测器的光学配置。 特别地，检测器可以包括多个传感器模块。 另外，光学配置可以包括在小于5米长的光路内提供至少100倍的放大倍数的多个反射镜。 在一个实施例中，光路大约2-3米长。

公开(公告)号：US20140001370A1

公开(公告)日：2014-01-02

申请号：US14014142

申请日：2013-08-29

Applicant: KLA-Tencor Corporation

Inventor： Yung-Ho Chuang ,  Richard W. Solarz ,  David R. Shafer ,  Bin-Ming Benjamin Tsai ,  David L. Brown

IPC: G01N21/88

CPC classification number: G01N21/95 ,  G01N21/8806 ,  G01N21/9501 ,  G01N21/956 ,  G01N2021/95676 ,  G01N2201/068 ,  G03F1/84 ,  G03F7/70616 ,  H05G2/008

Abstract: Inspection of EUV patterned masks, blank masks, and patterned wafers generated by EUV patterned masks requires high magnification and a large field of view at the image plane. An EUV inspection system can include a light source directed to an inspected surface, a detector for detecting light deflected from the inspected surface, and an optic configuration for directing the light from the inspected surface to the detector. In particular, the detector can include a plurality of sensor modules. Additionally, the optic configuration can include a plurality of mirrors that provide magnification of at least 100× within an optical path less than 5 meters long. In one embodiment, the optical path is approximately 2-3 meters long.