Feed Forward of Metrology Data in a Metrology System
    11.
    发明申请
    Feed Forward of Metrology Data in a Metrology System 有权
    计量系统中计量数据的前馈

    公开(公告)号:US20160290796A1

    公开(公告)日:2016-10-06

    申请号:US15090389

    申请日:2016-04-04

    Abstract: A metrology performance analysis system includes a metrology tool including one or more detectors and a controller communicatively coupled to the one or more detectors. The controller is configured to receive one or more metrology data sets associated with a metrology target from the metrology tool in which the one or more metrology data sets include one or more measured metrology metrics and the one or more measured metrology metrics indicate deviations from nominal values. The controller is further configured to determine relationships between the deviations from the nominal values and one or more selected semiconductor process variations, and determine one or more root causes of the deviations from the nominal values based on the relationships between values of the one or more metrology metrics and the one or more selected semiconductor process variations.

    Abstract translation: 计量性能分析系统包括包括一个或多个检测器的计量工具和通信地耦合到所述一个或多个检测器的控制器。 所述控制器被配置为从所述计量工具接收与度量目标相关联的一个或多个度量数据集,其中所述一个或多个测量数据集包括一个或多个测量的度量度量,并且所述一个或多个测量的度量度量指示与标称值的偏差 。 控制器还被配置为确定与标称值和一个或多个所选择的半导体工艺变化的偏差之间的关系,并且基于一个或多个测量值的值之间的关系确定偏离标称值的一个或多个根本原因 度量和一个或多个所选择的半导体工艺变化。

    Method for measuring positions of structures on a mask and thereby determining mask manufacturing errors
    12.
    发明授权
    Method for measuring positions of structures on a mask and thereby determining mask manufacturing errors 有权
    用于测量掩模上结构位置的方法,从而确定掩模制造误差

    公开(公告)号:US09424636B2

    公开(公告)日:2016-08-23

    申请号:US14643610

    申请日:2015-03-10

    CPC classification number: G06T7/001 G03F1/84 G06T2207/30148

    Abstract: The invention discloses a method for measuring positions of structures on a mask and thereby determining mask manufacturing errors. It is shown, that from a plurality measurement sites an influence of an optical proximity effect on a position measurement of structures on the mask, is determined with a metrology tool. A rendered image of the data representation of the structures is obtained. Additionally, at least one optical image of the pattern within the area on the mask is captured with the imaging system of the metrology tool. The field of view of the metrology tool is approximately identical to the size of the selected area of the mask design data. Finally, a residual is determined, which shows the manufacturing based proximity effect.

    Abstract translation: 本发明公开了一种用于测量掩模上结构位置的方法,从而确定掩模制造误差。 示出了从多个测量位置,使用计量工具确定光学邻近效应对掩模上的结构的位置测量的影响。 获得结构的数据表示的渲染图像。 另外,用计量工具的成像系统捕获掩模区域内的图案的至少一个光学图像。 计量工具的视野与掩模设计数据的选定区域的大小大致相同。 最后,确定残差,显示了基于制造的邻近效应。

    Method and System for Universal Target Based Inspection and Metrology
    13.
    发明申请
    Method and System for Universal Target Based Inspection and Metrology 有权
    通用目标检测和计量方法与系统

    公开(公告)号:US20140199791A1

    公开(公告)日:2014-07-17

    申请号:US14083126

    申请日:2013-11-18

    CPC classification number: H01L22/12 G06F17/5081

    Abstract: Universal target based inspection drive metrology includes designing a plurality of universal metrology targets measurable with an inspection tool and measurable with a metrology tool, identifying a plurality of inspectable features within at least one die of a wafer using design data, disposing the plurality of universal targets within the at least one die of the wafer, each universal target being disposed at least proximate to one of the identified inspectable features, inspecting a region containing one or more of the universal targets with an inspection tool, identifying one or more anomalistic universal targets in the inspected region with an inspection tool and, responsive to the identification of one or more anomalistic universal targets in the inspected region, performing one or more metrology processes on the one or more anomalistic universal metrology targets with the metrology tool.

    Abstract translation: 通用的基于目标的检测驱动度量包括设计多个通过检测工具测量的通用度量目标并且可以用计量工具测量,使用设计数据识别晶片的至少一个管芯内的多个检查特征,将多个通用目标 在晶片的至少一个模具内,每个通用目标被设置为至少接近所识别的可检查特征之一,用检查工具检查包含一个或多个通用目标的区域,以识别一个或多个异常通用目标 检查区域具有检查工具,并且响应于在被检查区域中识别一个或多个异常通用目标,对所述一个或多个异常通用度量目标与计量工具执行一个或多个计量过程。

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