Methods and systems for compact, small spot size soft x-ray scatterometry

    公开(公告)号:US12013355B2

    公开(公告)日:2024-06-18

    申请号:US17411030

    申请日:2021-08-24

    Abstract: Methods and systems for performing measurements of semiconductor structures based on high-brightness, Soft X-Ray (SXR) illumination over a small illumination spot size with a small physical footprint are presented herein. In one aspect, the focusing optics of an SXR based metrology system project an image of the illumination source onto a specimen under measurement with a demagnification of at least 1.25. In a further aspect, an illumination beam path from the x-ray illumination source to the specimen under measurement is less than 2 meters. In another aspect, SXR based measurements are performed with x-ray radiation in the soft x-ray region (i.e., 80-3000 eV). In some embodiments, SXR based measurements are performed at grazing angles of incidence in a range from near zero degrees to 90 degrees. In some embodiments, the illumination optics project an image of an illumination source onto a specimen under measurement with a demagnification of 50, or less.

    MONOLITHIC OPTICAL RETARDER
    12.
    发明申请

    公开(公告)号:US20230131913A1

    公开(公告)日:2023-04-27

    申请号:US17541037

    申请日:2021-12-02

    Abstract: A monolithic optical retarder formed from a monolithic prism may include an input face for receiving a light beam, an output face aligned with an optical axis of the light beam prior to entering the input face, and three or more reflection faces. The three or more reflection faces may be oriented to provide an optical path for the light beam from the input face to the output face via reflection by the three or more reflection faces, where the monolithic optical retarder imparts a selected optical retardation on the light beam based on total internal reflection on at least one of the reflection faces. Further, the input face, the output face, and the three or more reflection faces may be oriented such that an optical axis of the light beam exiting the output face is equal to the optical axis of the light beam entering the input face.

    OPTICAL METROLOGY TOOL EQUIPPED WITH MODULATED ILLUMINATION SOURCES

    公开(公告)号:US20210223166A1

    公开(公告)日:2021-07-22

    申请号:US17222330

    申请日:2021-04-05

    Abstract: The system includes a modulatable illumination source configured to illuminate a surface of a sample disposed on a sample stage, a detector configured to detect illumination emanating from a surface of the sample, illumination optics configured to direct illumination from the modulatable illumination source to the surface of the sample, collection optics configured to direct illumination from the surface of the sample to the detector, and a modulation control system communicatively coupled to the modulatable illumination source, wherein the modulation control system is configured to modulate a drive current of the modulatable illumination source at a selected modulation frequency suitable for generating illumination having a selected coherence feature length. In addition, the present invention includes the time-sequential interleaving of outputs of multiple light sources to generate periodic pulse trains for use in multi-wavelength time-sequential optical metrology.

    Optics For Measurement Of Thick Films And High Aspect Ratio Structures

    公开(公告)号:US20240418635A1

    公开(公告)日:2024-12-19

    申请号:US18210558

    申请日:2023-06-15

    Abstract: Methods and systems for performing spectroscopic ellipsometry measurements of semiconductor structures with reflective collection relay optics having demagnification from the spectrometer slit to the detector are presented herein. The demagnification effectively increases the NA at the detector and reduces the measurement spot size at the wafer imaged onto the detector. In this manner, the demagnification maintains high spectral resolution at the detector, particularly in the ultraviolet wavelength range, e.g., 120-400 nanometers, while maintaining a small collection NA at the wafer, e.g., collection NA less than 0.05. The small collection NA enables high fringe contrast, signal fidelity, and sensitivity, when measuring thick, multiple layer stacks, e.g., 200-300 layers.

    ANGLE RESOLVED REFLECTOMETRY FOR THICK FILMS AND HIGH ASPECT RATIO STRUCTURES

    公开(公告)号:US20240280484A1

    公开(公告)日:2024-08-22

    申请号:US18467371

    申请日:2023-09-14

    CPC classification number: G01N21/55 G01B11/06 G01N21/21 H01L22/12

    Abstract: The system includes a light source configured to emit light at one or more wavelengths, one or more angles of incidence (AOI), and one or more azimuths; a polarization assembly configured to produce one or more polarization states of the light; a main objective configured to focus the light in the one or more polarization states onto a target that reflects the light; an analyzer assembly configured to analyze one or more polarization states of the light reflected from the target; a detector configured to detect the light reflected from the target and generate an output signal based on the detected light; and a processor configured to generate a measurement of the target based on the output signal produced at the one or more polarization states, the one or more wavelengths, the one or more AOIs, and the one or more azimuths.

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