HYBRID PHOTONIC RING MODULATORS
    13.
    发明申请

    公开(公告)号:US20220107542A1

    公开(公告)日:2022-04-07

    申请号:US17065118

    申请日:2020-10-07

    Abstract: Photonic ring modulators with high tuning efficiency and small footprint can be formed in a hybrid material platform from a silicon bus waveguide vertically coupled to an optically active compound semiconductor (e.g., III-V) ring resonator. The performance of the modulator, e.g., in terms of the tuning efficiency and the maximum insertion loss, may be optimized by suitable levels of an applied bias voltage and a heater power of a heater optionally included in the ring modulator. The disclosed hybrid photonic ring modulators may be used, e.g., in photonic transceiver circuits with high lane count.

    Optical coupler including a faraday rotator layer and at least one grating coupler

    公开(公告)号:US11137555B2

    公开(公告)日:2021-10-05

    申请号:US16727525

    申请日:2019-12-26

    Abstract: An optical coupling device can couple incident light from a fiber into waveguides, but can reduce the coupling of return light from the waveguides into the fiber. A Faraday rotator layer can rotate by forty-five degrees, with a first handedness, respective planes of polarization of incident beams, and can rotate by forty-five degrees, with a second handedness opposite the first handedness, respective planes of polarization of return beams. A redirection layer can include at least one grating coupler that can redirect an incident beam of one polarization so that the redirected path extends within the redirection layer toward a first waveguide, and can redirect an incident beam of an opposite polarization so that the redirected path extends within the redirection layer toward a second waveguide. An optional birefringent layer can spatially separate incident beam having different polarizations, so that two single-polarization grating couplers can be used.

    EFFICIENT HEAT-SINKING IN PIN DIODE

    公开(公告)号:US20210225732A1

    公开(公告)日:2021-07-22

    申请号:US17223167

    申请日:2021-04-06

    Abstract: The thermal impedance of p-i-n diodes integrated on semiconductor-on-insulator substrates can be reduced with thermally conducting vias that shunt heat across thermal barriers such as, e.g., the thick top oxide cladding often encapsulating the p-i-n diode. In various embodiments, one or more thermally conducting vias extend from a top surface of the intrinsic diode layer to a metal structure connected to the doped top layer of the diode, and/or from that metal structure down to at least the semiconductor device layer of the substrate.

    Optical coupler including a faraday rotator layer and at least one grating coupler

    公开(公告)号:US10551575B2

    公开(公告)日:2020-02-04

    申请号:US15685114

    申请日:2017-08-24

    Abstract: An optical coupling device can couple incident light from a fiber into waveguides, but can reduce the coupling of return light from the waveguides into the fiber. A Faraday rotator layer can rotate by forty-five degrees, with a first handedness, respective planes of polarization of incident beams, and can rotate by forty-five degrees, with a second handedness opposite the first handedness, respective planes of polarization of return beams. A redirection layer can include at least one grating coupler that can redirect an incident beam of one polarization so that the redirected path extends within the redirection layer toward a first waveguide, and can redirect an incident beam of an opposite polarization so that the redirected path extends within the redirection layer toward a second waveguide. An optional birefringent layer can spatially separate incident beam having different polarizations, so that two single-polarization grating couplers can be used.

    Optical amplifier including multi-section gain waveguide

    公开(公告)号:US10090641B2

    公开(公告)日:2018-10-02

    申请号:US15805877

    申请日:2017-11-07

    Abstract: Described herein are methods, systems, and apparatuses to utilize a semiconductor optical amplifier (SOA) comprising a silicon layer including a silicon waveguide, a non-silicon layer disposed on the silicon layer and including a non-silicon waveguide, first and second mode transition region comprising tapers in the silicon waveguide and/or the non-silicon waveguide for exchanging light between the waveguide, and a plurality of regions disposed between the first and second mode transition regions comprising different cross-sectional areas of the silicon waveguide and the non-silicon waveguide such that confinement factors for the non-silicon waveguide in each of the plurality of regions differ.

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