公开(公告)号：US11237325B2

公开(公告)日：2022-02-01

申请号：US16844492

申请日：2020-04-09

Applicant: Juniper Networks, Inc.

Inventor： John Parker ,  Gregory Alan Fish ,  Martin A. Spannagel ,  Antonio Labaro

IPC: G02B6/12 ,  H01L21/12 ,  G02B6/122 ,  H01L21/762 ,  H01L21/02 ,  H01L21/306 ,  G02B6/132 ,  G02B6/136

Abstract: Methods and systems are presented for heterogeneous integration of photonics and electronics with atomic layer deposition (ALD) bonding. One method includes operations for forming a compound semiconductor and for depositing (e.g., via atomic layer deposition) a continuous film of a protection material (e.g., Al2O3) on a first surface of the compound semiconductor. Further, the method includes an operation for forming a silicon on insulator (SOI) wafer, with the SOI wafer comprising one or more waveguides. The method further includes bonding the compound semiconductor at the first surface to the SOI wafer to form a bonded structure and processing the bonded structure. The protection material protects the compound semiconductor from acid etchants during further processing of the bonded structure.

公开(公告)号：US20200233148A1

公开(公告)日：2020-07-23

申请号：US16844492

申请日：2020-04-09

Applicant: Juniper Networks, Inc.

Inventor： John Parker ,  Gregory Alan Fish ,  Martin A. Spannagel ,  Antonio Labaro

IPC: G02B6/122 ,  H01L21/762 ,  H01L21/02 ,  H01L21/306 ,  G02B6/132 ,  G02B6/136

Abstract: Methods and systems are presented for heterogeneous integration of photonics and electronics with atomic layer deposition (ALD) bonding. One method includes operations for forming a compound semiconductor and for depositing (e.g., via atomic layer deposition) a continuous film of a protection material (e.g., Al2O3) on a first surface of the compound semiconductor. Further, the method includes an operation for forming a silicon on insulator (SOI) wafer, with the SOI wafer comprising one or more waveguides. The method further includes bonding the compound semiconductor at the first surface to the SOI wafer to form a bonded structure and processing the bonded structure. The protection material protects the compound semiconductor from acid etchants during further processing of the bonded structure.

公开(公告)号：US20190072715A1

公开(公告)日：2019-03-07

申请号：US16181868

申请日：2018-11-06

Applicant: Juniper Networks, Inc.

Inventor： John Parker ,  Gregory Alan Fish ,  Martin A. Spannagel ,  Antonio Labaro

IPC: G02B6/122 ,  G02B6/136 ,  G02B6/132 ,  H01L21/306 ,  H01L21/02 ,  H01L21/762

Abstract: Methods and systems are presented for heterogeneous integration of photonics and electronics with atomic layer deposition (ALD) bonding. One method includes operations for forming a compound semiconductor and for depositing (e.g., via atomic layer deposition) a continuous film of a protection material (e.g., Al2O3) on a first surface of the compound semiconductor. Further, the method includes an operation for forming a silicon on insulator (SOI) wafer, with the SOI wafer comprising one or more waveguides. The method further includes bonding the compound semiconductor at the first surface to the SOI wafer to form a bonded structure and processing the bonded structure. The protection material protects the compound semiconductor from acid etchants during further processing of the bonded structure.

公开(公告)号：US20180203188A1

公开(公告)日：2018-07-19

申请号：US15408725

申请日：2017-01-18

Applicant: Juniper Networks, Inc.

Inventor： John Parker ,  Gregory Alan Fish ,  Martin A. Spannagel ,  Antonio Labaro

IPC: G02B6/122 ,  H01L21/762 ,  H01L21/02 ,  H01L21/306 ,  G02B6/132 ,  G02B6/136

CPC classification number: G02B6/122 ,  G02B6/132 ,  G02B6/136 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02178 ,  H01L21/02181 ,  H01L21/02186 ,  H01L21/02189 ,  H01L21/0228 ,  H01L21/30617 ,  H01L21/76251

Abstract: Methods and systems are presented for heterogeneous integration of photonics and electronics with atomic layer deposition (ALD) bonding. One method includes operations for forming a compound semiconductor and for depositing (e.g., via atomic layer deposition) a continuous film of a protection material (e.g., Al2O3) on a first surface of the compound semiconductor. Further, the method includes an operation for forming a silicon on insulator (SOI) wafer, with the SOI wafer comprising one or more waveguides. The method further includes bonding the compound semiconductor at the first surface to the SOI wafer to form a bonded structure and processing the bonded structure. The protection material protects the compound semiconductor from acid etchants during further processing of the bonded structure.

公开(公告)号：US20220107458A1

公开(公告)日：2022-04-07

申请号：US17554342

申请日：2021-12-17

Applicant: Juniper Networks, Inc.

Inventor： John Parker ,  Gregory Alan Fish ,  Martin A. Spannagel ,  Antonio Labaro

IPC: G02B6/122 ,  H01L21/762 ,  H01L21/02 ,  H01L21/306 ,  G02B6/132 ,  G02B6/136

Abstract: Methods and systems are presented for heterogeneous integration of photonics and electronics with atomic layer deposition (ALD) bonding. One method includes operations for forming a compound semiconductor and for depositing (e.g., via atomic layer deposition) a continuous film of a protection material (e.g., Al2O3) on a first surface of the compound semiconductor. Further, the method includes an operation for forming a silicon on insulator (SOI) wafer, with the SOI wafer comprising one or more waveguides. The method further includes bonding the compound semiconductor at the first surface to the SOI wafer to form a bonded structure and processing the bonded structure. The protection material protects the compound semiconductor from acid etchants during further processing of the bonded structure.

公开(公告)号：US10168475B2

公开(公告)日：2019-01-01

申请号：US15408725

申请日：2017-01-18

Applicant: Juniper Networks, Inc.

Inventor： John Parker ,  Gregory Alan Fish ,  Martin A. Spannagel ,  Antonio Labaro

IPC: G02B6/122 ,  G02B6/136 ,  H01L21/762 ,  H01L21/02 ,  H01L21/306 ,  G02B6/132

Abstract: Methods and systems are presented for heterogeneous integration of photonics and electronics with atomic layer deposition (ALD) bonding. One method includes operations for forming a compound semiconductor and for depositing (e.g., via atomic layer deposition) a continuous film of a protection material (e.g., Al2O3) on a first surface of the compound semiconductor. Further, the method includes an operation for forming a silicon on insulator (SOI) wafer, with the SOI wafer comprising one or more waveguides. The method further includes bonding the compound semiconductor at the first surface to the SOI wafer to form a bonded structure and processing the bonded structure. The protection material protects the compound semiconductor from acid etchants during further processing of the bonded structure.