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11.发明公开公开(公告)号：US20230168575A1
公开(公告)日：2023-06-01
申请号：US17990049
申请日：2022-11-18
Applicant: HOYA CORPORATION
Inventor： Yohei IKEBE , Tsutomu SHOKI
CPC classification number: G03F1/32 , G03F1/24 , G03F7/2004
Abstract: Provided is a reflective mask blank with which it is possible to further reduce the shadowing effect of a reflective mask, and also possible to form a fine and highly accurate phase-shift pattern. A reflective mask blank having, in the following order on a substrate, a multilayer reflective film and a phase-shift film that shifts the phase of EUV light, said reflective mask blank characterized in that the phase-shift film has a thin film comprising a metal-containing material that contains: ruthenium (Ru); and at least one element from among chromium (Cr), nickel (Ni), (Co), aluminum (Al), silicon (Si), titanium (Ti), vanadium (V), germanium (Ge), niobium (Nb), molybdenum (Mo), tin (Sn), tellurium (Te), hafnium (Hf), tungsten (W), and rhenium (Re).
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公开(公告)号：US20220121102A1
公开(公告)日：2022-04-21
申请号：US17431700
申请日：2020-02-21
Applicant: HOYA CORPORATION
Inventor： Tsutomu SHOKI , Yohei IKEBE
IPC: G03F1/24 , H01L21/033 , G03F1/58
Abstract: Provided is a reflective mask blank that enables to further reduce the shadowing effect of a reflective mask and form a fine and highly accurate absorber pattern.
The reflective mask blank comprising a multilayer reflective film, an absorber film, and an etching mask film disposed on a substrate in this order, wherein the absorber film comprises a buffer layer and an absorption layer provided on the buffer layer, the buffer layer comprises a material comprising tantalum (Ta) or silicon (Si) and a film thickness of the buffer layer is 0.5 nm or more and 25 nm or less, the absorption layer comprises a material comprising chromium (Cr) and an extinction coefficient of the absorption layer with respect to EUV light is higher than the extinction coefficient of the buffer layer with respect to the EUV light, and the etching mask film comprises a material comprising tantalum (Ta) or silicon (Si) and a film thickness of the etching mask film is 0.5 nm or more and 14 nm or less.-
公开(公告)号：US20210311382A1
公开(公告)日：2021-10-07
申请号：US17265990
申请日：2019-08-08
Applicant: HOYA CORPORATION
Inventor： Mizuki KATAOKA , Yohei IKEBE
Abstract: Provided is a reflective mask blank that can reduce the shadowing effect of a reflective mask and form a fine and high-precision absorbent body pattern.
The reflective mask blank comprises a substrate, a multi-layer reflective film disposed on the substrate, and an absorbent body film disposed on the multi-layer reflective film, and is characterized in that: the absorbent body film includes, in at least a part thereof, at least one element with a high absorption coefficient, chosen from the group consisting of cobalt (Co) and nickel (Ni), and an element that increases the speed of dry etching; the absorbent body film includes a lower-surface region that includes a surface on the substrate side and an upper-surface region that includes a surface on the side opposite the substrate; and the concentration (atomic percentage) of the element with the high absorption coefficient in the upper-surface region is greater than the concentration (atomic percentage) of the element with the high absorption coefficient in the lower-surface region.-
14.发明申请公开(公告)号：US20180329285A1
公开(公告)日：2018-11-15
申请号：US15539263
申请日：2015-12-15
Applicant: HOYA CORPORATION
Inventor： Kazuhiro HAMAMOTO , Yohei IKEBE
CPC classification number: G03F1/24 , C03C3/06 , C03C15/00 , C03C17/3435 , C03C17/3441 , C03C17/3636 , C03C23/0075 , C03C2204/08 , G03F1/32 , G03F1/48
Abstract: An object of the present invention is to obtain a reflective mask blank capable of obtaining high contrast at the edges of a phase shift film pattern. Provided is a reflective mask blank comprising a multilayer reflective film and a phase shift film that shifts the phase of EUV light formed in that order on a substrate, wherein root mean square roughness (Rms), obtained by measuring a 1 μm×1 μm region on the surface of the phase shift film with an atomic force microscope, is not more than 0.50 nm, and power spectrum density at a spatial frequency of 10 to 100 μm−1 is not more than 17 nm4.
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公开(公告)号：US20180157166A1
公开(公告)日：2018-06-07
申请号：US15676032
申请日：2017-08-14
Applicant: HOYA CORPORATION
Inventor： Yohei IKEBE , Masaru TANABE
IPC: G03F1/60 , H01L21/033 , G03F1/22 , G03F1/24 , C03C17/36
CPC classification number: G03F1/60 , C03C17/36 , C03C17/3602 , C03C17/3636 , C03C17/3649 , C03C17/3657 , C03C2217/254 , C03C2217/26 , C03C2217/28 , C03C2217/734 , C03C2218/156 , G03F1/22 , G03F1/24 , H01L21/0332 , H01L21/0335 , H01L21/0337 , H01L21/0338
Abstract: The object is to provide a mask blank substrate, a mask blank, and a transfer mask which can achieve easy correction of a wavefront by a wavefront correction function of an exposure apparatus. The further object is to provide methods for manufacturing them.A virtual surface shape, which is an optically effective flat reference surface shape defined by a Zernike polynomial, is determined, wherein the Zernike polynomial is composed of only terms in which the order of variables related to a radius is second or lower order and includes one or more terms in which the order of the variables related to a radius is second-order; and the mask blank substrate, in which difference data (PV value) between the maximum value and the minimum value of difference shape between a virtual surface shape and a composite surface shape obtained by composing respective surface shapes of two main surfaces is 25 nm or less, is selected.
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Patent Agency Ranking
公开(公告)号：US20240377719A1
公开(公告)日：2024-11-14
申请号：US18692007
申请日：2022-09-22
Applicant: HOYA CORPORATION
Inventor： Teiichiro UMEZAWA , Yohei IKEBE
Abstract: Provided is a substrate with a multilayer reflective film comprising a multilayer reflective film having a shallow effective reflective surface and capable of suppressing a phenomenon that atoms to be a material are diffused between a low refractive index layer and a high refractive index layer.
A substrate with a multilayer reflective film comprises a substrate and a multilayer reflective film formed on the substrate, in which the multilayer reflective film comprises a multilayer film in which a low refractive index layer and a high refractive index layer comprising silicon (Si) are alternately layered, the multilayer reflective film further comprises at least one intermediate layer disposed between the low refractive index layer and the high refractive index layer, the multilayer reflective film comprises at least one additive element selected from nitrogen (N), carbon (C), and oxygen (O), and the content of the additive element in the multilayer reflective film is 40 atom % or less.-
17.发明公开公开(公告)号：US20240103355A1
公开(公告)日：2024-03-28
申请号：US18528544
申请日：2023-12-04
Applicant: HOYA CORPORATION
Inventor： Yohei IKEBE
Abstract: A reflective mask blank comprises a substrate; a multilayer reflective film which is formed on the substrate and reflects EUV light; and a layered film which is formed on the multilayer reflective film. The layered film has an absolute reflectance of 2.5% or less with respect to EUV light, and comprises a first layer and a second layer that is formed on the first layer; and the first layer comprises a phase shift film which shifts the phase of EUV light. Alternatively, the layered film is a phase shift film which comprises a first layer and a second layer that is formed on the first layer, and which shifts the phase of EUV light; and the first layer comprises an absorption layer that has an absolute reflectance of 2.5% or less with respect to EUV light.
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18.发明公开公开(公告)号：US20240036457A1
公开(公告)日：2024-02-01
申请号：US18483453
申请日：2023-10-09
Applicant: HOYA CORPORATION
Inventor： Yohei IKEBE , Tsutomu SHOKI
CPC classification number: G03F1/32 , G03F1/24 , G03F7/2004
Abstract: Provided is a reflective mask blank with which it is possible to further reduce the shadowing effect of a reflective mask, and also possible to form a fine and highly accurate phase-shift pattern. A reflective mask blank having, in the following order on a substrate, a multilayer reflective film and a phase-shift film that shifts the phase of EUV light, said reflective mask blank characterized in that the phase-shift film has a thin film comprising a metal-containing material that contains: ruthenium (Ru); and at least one element from among chromium (Cr), nickel (Ni), (Co), aluminum (Al), silicon (Si), titanium (Ti), vanadium (V), germanium (Ge), niobium (Nb), molybdenum (Mo), tin (Sn), tellurium (Te), hafnium (Hf), tungsten (W), and rhenium (Re).
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19.发明申请公开(公告)号：US20220390826A1
公开(公告)日：2022-12-08
申请号：US17772641
申请日：2020-10-19
Applicant: HOYA CORPORATION
Inventor： Yohei IKEBE , Osamu NOZAWA
Abstract: Provided is a reflective mask blank comprising a phase shift film having a small change in the phase difference and/or reflectance of the phase shift film even in a case where the film thickness of the phase shift film changes.
A reflective mask blank comprises a multilayer reflective film and a phase shift film in this order on a main surface of a substrate. The phase shift film comprises a lower layer and an uppermost layer. The lower layer is located between the uppermost layer and the multilayer reflective film. The lower layer is formed of a material in which the total content of ruthenium and chromium is 90 atomic % or more, or a material in which the total content of ruthenium, chromium, and nitrogen is 90 atomic % or more. The uppermost layer is formed of a material in which the total content of ruthenium, chromium, and oxygen is 90 atomic % or more.-
20.发明申请公开(公告)号：US20210223681A1
公开(公告)日：2021-07-22
申请号：US17056676
申请日：2019-05-24
Applicant: HOYA CORPORATION
Inventor： Yohei IKEBE , Tsutomu SHOKI
Abstract: Provided is a reflective mask blank with which it is possible to further reduce the shadowing effect of a reflective mask, and also possible to form a fine and highly accurate phase-shift pattern. A reflective mask blank having, in the following order on a substrate, a multilayer reflective film and a phase-shift film that shifts the phase of EUV light, said reflective mask blank characterized in that: the phase-shift film has a first layer and a second layer; the first layer comprises a material that contains at least one element from among tantalum (Ta) and chromium (Cr); and the second layer comprises a metal-containing material that contains ruthenium (Ru) and at least one element from among chromium (Cr), nickel (Ni), cobalt (Co), vanadium (V), niobium (Nb), molybdenum (Mo), tungsten (W), and rhenium (Re).
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