公开(公告)号：US20230194973A1

公开(公告)日：2023-06-22

申请号：US17926962

申请日：2021-06-15

Applicant: HOYA CORPORATION

Inventor： Osamu NOZAWA ,  Keishi AKIYAMA

IPC: G03F1/32

CPC classification number: G03F1/32

Abstract: Provided is a mask blank .
A transmittance adjusting film is provided on a phase shift film; the phase shift film generates a phase difference of 150 degrees or more and 210 degrees or less between an ArF excimer laser exposure light transmitted through the phase shift film and the exposure light transmitted through the air for a same distance as a thickness of the phase shift film; and a refractive index nu with respect to a wavelength of the exposure light, an extinction coefficient ku with respect to the wavelength of the exposure light, and a thickness du[nm] of the transmittance adjusting film satisfy both equations (1) and (2) given below.





d
U

≤
-17
.63
×

n
U



3

+142
.0
×

n
U



2

-364
.9
×

n
U

+315
.8









d
U

≥
-2
.805
×

k
U



3

+19
.48
×

k
U



2

-43
.58
×

k
U

+38
.11

公开(公告)号：US20220121104A1

公开(公告)日：2022-04-21

申请号：US17298248

申请日：2019-12-10

Applicant: HOYA CORPORATION

Inventor： Hitoshi MAEDA ,  Osamu NOZAWA

IPC: G03F1/32

Abstract: Provided is a mask blank, including a phase shift film.
The phase shift film has a function to transmit an exposure light of an ArF excimer laser at a transmittance of 15% or more and a function to generate a phase difference of 150 degrees or more and 210 degrees or less; the phase shift film is formed of a material containing a non-metallic element and silicon; the phase shift film has a structure where a first layer, a second layer, and a third layer are stacked in this order; refractive indexes n1, n2, n3 of the first, second, and third layers, respectively, at a wavelength of an exposure light satisfy relations of n1>n2 and n2 k2 and k2

公开(公告)号：US20210026235A1

公开(公告)日：2021-01-28

申请号：US17040937

申请日：2019-03-15

Applicant: HOYA CORPORATION

Inventor： Hitoshi MAEDA ,  Osamu NOZAWA ,  Yasutaka HORIGOME

IPC: G03F1/32 ,  G03F1/72 ,  G03F1/84 ,  G03F1/80 ,  H01L21/033

Abstract: A mask blank has a phase shift film of a structure in which a lower layer, an intermediate layer, and an upper layer are layered in this order. The lower layer is formed of a silicon-nitride-based material. The intermediate layer is formed of silicon-oxynitride-based material. The upper layer is formed of a silicon-oxide-based material. The nitrogen content of the lower layer is greater than those of the intermediate and the upper layers. The oxygen content of the upper layer is greater than those of the intermediate and the lower layers. The ratio of the film thickness of the intermediate layer with respect to the overall film thickness of the phase shift film is 0.15 or more, and the ratio of the film thickness of the upper layer with respect to the overall film thickness of the phase shift film is 0.10 or more.

公开(公告)号：US20200150524A1

公开(公告)日：2020-05-14

申请号：US16742786

申请日：2020-01-14

Applicant: HOYA CORPORATION

Inventor： Osamu NOZAWA ,  Hiroaki SHISHIDO ,  Ryo OHKUBO

IPC: G03F1/32 ,  H01L21/308 ,  G03F7/20 ,  G03F1/78 ,  G03F1/80 ,  G03F1/54 ,  C23C14/06 ,  C23C14/14

Abstract: A mask blank is provided which comprises a transparent substrate, an etching mask formed on the transparent substrate, and a light shielding film formed on the etching mask film. The mask blank may also include a light-semitransmissive film formed between the transparent substrate and the etching mask film. The etching mask film contains chromium and carbon, and the light shielding film contains chromium and oxygen. A C1s narrow spectrum of the etching mask film as obtained by X-ray photoelectron spectroscopy analysis has a maximum peak at a binding energy of not less than 282 eV and not more than 284 eV.

公开(公告)号：US20170075210A1

公开(公告)日：2017-03-16

申请号：US15122453

申请日：2015-02-24

Applicant: HOYA CORPORATION

Inventor： Hiroaki SHISHIDO ,  Osamu NOZAWA ,  Takashi UCHIDA

IPC: G03F1/32 ,  H01L21/308 ,  G03F7/20 ,  G03F7/34 ,  G03F1/80 ,  G03F1/58

CPC classification number: G03F1/32 ,  G03F1/58 ,  G03F1/80 ,  G03F7/20 ,  G03F7/34 ,  H01L21/3081 ,  H01L21/3086

Abstract: A mask blank having a structure in which, on a transparent substrate, a phase shift film, a light shielding film, and a hard mask film are laminated in the stated order from the transparent substrate side. The phase shift film is formed of a material containing silicon, the hard mask film is formed of a material containing at least one element selected from silicon and tantalum, and the light shielding film is formed of a material containing chromium. The mask blank has a structure in which the following three layers: a lower layer, an intermediate layer, and an upper layer are laminated, the upper layer having a highest content of chromium in the light shielding film, the intermediate layer having a lowest content of chromium in the light shielding film, and containing at least one metallic element selected from indium, tin, and molybdenum.

Abstract translation: 从透明基板侧按顺序层叠有透明基板上的相移膜，遮光膜和硬掩模膜的结构的掩模坯料。 相移膜由含硅的材料形成，硬掩模膜由含有至少一种选自硅和钽的元素的材料形成，并且遮光膜由含铬的材料形成。 掩模坯料具有层叠以下三层：下层，中间层和上层的结构，在遮光膜中上层具有最高铬含量，中间层具有最低含量 并且含有至少一种选自铟，锡和钼的金属元素。

公开(公告)号：US20160202602A1

公开(公告)日：2016-07-14

申请号：US14892260

申请日：2014-05-19

Applicant: HOYA CORPORATION

Inventor： Hiroaki SHISHIDO ,  Osamu NOZAWA ,  Ryo OHKUBO

IPC: G03F1/32

CPC classification number: G03F1/32 ,  C23G5/00 ,  G03F1/80

Abstract: In a mask blank having a structure in which a light-semitransmissive film and a light-shielding film are laminated on a main surface of a transparent substrate, the light-semitransmissive film is made of a material that can be dry-etched with an etching gas containing a fluorine-based gas, the light-shielding film is made of a material that contains tantalum and one or more elements selected from hafnium and zirconium and contains no oxygen except in a surface layer thereof, an etching stopper film is provided between the light-semitransmissive film and the light-shielding film, and the etching stopper film is made of a material that contains chromium with an oxygen content of 20 at % or less.

Abstract translation: 在具有光半透射膜和遮光膜层叠在透明基板的主表面上的结构的掩模坯料中，光半透射膜由可以用蚀刻干法蚀刻的材料制成 包含氟基气体的气体，所述遮光膜由含有钽和选自铪和锆的一种或多种元素的材料制成，除了其表面层之外不含氧，所述蚀刻阻挡膜设置在 光半透射膜和遮光膜，并且蚀刻停止膜由含有20原子％以下的含铬的材料构成。

公开(公告)号：US20150168823A1

公开(公告)日：2015-06-18

申请号：US14627426

申请日：2015-02-20

Applicant: HOYA CORPORATION

Inventor： Osamu NOZAWA ,  Hiroaki SHISHIDO ,  Kazuya SAKAI

IPC: G03F1/32 ,  G03F1/26

CPC classification number: G03F1/32 ,  B82Y30/00 ,  C23C14/0036 ,  C23C14/0641 ,  G03F1/26 ,  G03F1/54 ,  G03F7/2041 ,  Y10S977/755

Abstract: Provided are a phase shift mask blank that is improved in the irradiation durability of a light-semitransmissive film (phase shift film), made of a material containing mainly a transition metal, silicon, and nitrogen, to exposure light having a wavelength of 200 nm or less and thus can improve the mask lifetime, a method of manufacturing such a phase shift mask blank, and a phase shift mask. The phase shift mask blank is used for manufacturing a phase shift mask adapted to be applied with ArF excimer laser exposure light. The phase shift mask blank has a light-semitransmissive film on a transparent substrate. The light-semitransmissive film is an incomplete nitride film containing mainly a transition metal, silicon, and nitrogen. The content ratio of the transition metal to the transition metal and the silicon in the light-semitransmissive film is less than 9%.

Abstract translation: 提供一种相位移掩模坯料，其将由主要包含过渡金属，硅和氮的材料制成的光半透射膜（相移膜）的照射耐久性提高到具有200nm波长的曝光光 或更小，从而可以改善掩模寿命，制造这种相移掩模坯料的方法和相移掩模。 相移掩模空白用于制造适于施加ArF受激准分子激光曝光光的相移掩模。 相移掩模空白在透明基板上具有轻半透射膜。 轻半透射膜是主要包含过渡金属，硅和氮的不完全氮化物膜。 过渡金属与过渡金属和轻半透射膜中的硅的含量比小于9％。

公开(公告)号：US20130078553A1

公开(公告)日：2013-03-28

申请号：US13628552

申请日：2012-09-27

Applicant: HOYA CORPORATION

Inventor： Kazuya SAKAI ,  Ryo OHKUBO ,  Osamu NOZAWA ,  Toshiyuki SUZUKI

IPC: G03F1/50 ,  G03F7/20

CPC classification number: G03F1/58 ,  G03F1/50 ,  G03F1/80

Abstract: The present invention is a mask blank used to fabricate a transfer mask, which has a laminated structure of a light shielding film and an etching mask film in this order on a transparent substrate, wherein the etching mask film comprises a material containing chromium, the light shielding film comprises a material containing tantalum, a highly oxidized layer is formed on the surface layer of the light shielding film on the opposite side from the transparent substrate, and a Ta 4 f narrow spectrum of the highly oxidized layer analyzed by X-ray photoelectron spectroscopy has a maximum peak at a binding energy of more than 23 eV.

Abstract translation: 本发明是用于在透明基板上依次制造具有遮光膜和蚀刻掩模膜的层叠结构的转印掩模的掩模坯料，其中蚀刻掩模膜包括含铬的材料，光 屏蔽膜包括含有钽的材料，在与透明基板相反的一侧的遮光膜的表面层上形成高度氧化层，并且通过X射线光电子分析的高氧化层的Ta 4 f窄谱 光谱学具有大于23eV的结合能的最大峰。

公开(公告)号：US20240184194A1

公开(公告)日：2024-06-06

申请号：US18278310

申请日：2022-01-21

Applicant: HOYA CORPORATION

Inventor： Hitoshi MAEDA ,  Osamu NOZAWA

IPC: G03F1/32

CPC classification number: G03F1/32

Abstract: A mask blank comprises a transparent substrate and a phase shift film on the transparent substrate. The phase shift film includes a lower layer and an upper layer formed on the lower layer. The upper layer is in contact with the lower layer. The lower layer includes silicon and oxygen. The upper layer includes hafnium and oxygen. The upper layer has a thickness of 5 nm or more. The phase shift film has a thickness of 90 nm or less.

公开(公告)号：US20230142180A1

公开(公告)日：2023-05-11

申请号：US17966230

申请日：2022-10-14

Applicant: HOYA CORPORATION

Inventor： Hitoshi MAEDA ,  Osamu NOZAWA

IPC: G03F1/22

CPC classification number: G03F1/22

Abstract: A mask blank includes a substrate and a thin film formed on the substrate, the thin film including hafnium and oxygen. A total content of hafnium and oxygen of the thin film is 95 atom % or more. An oxygen content of the thin film is 60 atom % or more. An X-ray diffraction profile of a diffraction angle 2θ between 25 degrees and 35 degrees has a maximum diffraction intensity in a diffraction angle 2θ between 28 degrees and 29 degrees, the X-ray diffraction profile being obtained by an X-ray diffraction analysis with an Out-of-Plane measurement with respect to the thin film.