Invention Application
US20130078553A1 MASK BLANK, TRANSFER MASK, METHOD OF MANUFACTURING TRANSFER MASK AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
有权
掩模层，转移掩模，制造转移掩模的方法和制造半导体器件的方法
- Patent Title: MASK BLANK, TRANSFER MASK, METHOD OF MANUFACTURING TRANSFER MASK AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
- Patent Title (中): 掩模层，转移掩模，制造转移掩模的方法和制造半导体器件的方法
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Application No.: US13628552Application Date: 2012-09-27
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Publication No.: US20130078553A1Publication Date: 2013-03-28
- Inventor: Kazuya SAKAI , Ryo OHKUBO , Osamu NOZAWA , Toshiyuki SUZUKI
- Applicant: HOYA CORPORATION
- Applicant Address: JP Tokyo
- Assignee: HOYA CORPORATION
- Current Assignee: HOYA CORPORATION
- Current Assignee Address: JP Tokyo
- Priority: JP2011-212583 20110928
- Main IPC: G03F1/50
- IPC: G03F1/50 ; G03F7/20
Abstract:
The present invention is a mask blank used to fabricate a transfer mask, which has a laminated structure of a light shielding film and an etching mask film in this order on a transparent substrate, wherein the etching mask film comprises a material containing chromium, the light shielding film comprises a material containing tantalum, a highly oxidized layer is formed on the surface layer of the light shielding film on the opposite side from the transparent substrate, and a Ta 4 f narrow spectrum of the highly oxidized layer analyzed by X-ray photoelectron spectroscopy has a maximum peak at a binding energy of more than 23 eV.
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