公开(公告)号：US20200287350A1

公开(公告)日：2020-09-10

申请号：US16756513

申请日：2018-10-02

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Yoshitaka KUROSAKA ,  Kazuyoshi HIROSE ,  Takahiro SUGIYAMA

IPC: H01S5/18 ,  H01S5/10 ,  H01S3/00

Abstract: A semiconductor light emitting element that can form a useful beam pattern is provided. A semiconductor laser element LD includes an active layer 4, a pair of cladding layers 2 and 7 between which the active layer 4 is interposed, and a phase modulation layer 6 optically coupled to the active layer 4. The phase modulation layer 6 includes a base layer 6A and different refractive index regions 6B that are different in refractive index from the base layer 6A. The different refractive index regions 6B desirably arranged in the phase modulation layer 6 enable emission of laser light including a dark line with no zero-order light.

公开(公告)号：US20180026419A1

公开(公告)日：2018-01-25

申请号：US15656096

申请日：2017-07-21

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Kazuyoshi HIROSE ,  Yoshitaka KUROSAKA ,  Takahiro SUGIYAMA ,  Yuu TAKIGUCHI ,  Yoshiro NOMOTO

IPC: H01S5/00 ,  H01S5/026 ,  H01S5/187

CPC classification number: H01S5/0085 ,  H01S5/0265 ,  H01S5/183 ,  H01S5/18338 ,  H01S5/18363 ,  H01S5/18386 ,  H01S5/18391 ,  H01S5/18394 ,  H01S5/187

Abstract: The embodiment relates to a semiconductor light-emitting device comprising a semiconductor substrate, a first cladding layer, an active layer, a second cladding layer, a contact layer, and a phase modulation layer located between the first cladding and active layers or between the active and second cladding layers. The phase modulation layer comprises a basic layer and plural first modified refractive index regions different from the basic layer in a refractive index. In a virtual square lattice set on the phase modulation layer such that the modified refractive index region is allocated in each of unit constituent regions constituting square lattices, the modified refractive index region is arranged to allow its gravity center position to be separated from the lattice point of the corresponding unit constituent region, and to have a rotation angle about the lattice point according a desired optical image.

公开(公告)号：US20180006426A1

公开(公告)日：2018-01-04

申请号：US15541515

申请日：2016-01-07

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Yuu TAKIGUCHI ,  Kazuyoshi HIROSE ,  Yoshiro NOMOTO ,  Takahiro SUGIYAMA ,  Yoshitaka KUROSAKA

IPC: H01S5/02 ,  G02B27/10 ,  G02F1/1335 ,  H01S5/18

CPC classification number: H01S5/02 ,  G02B27/1026 ,  G02B27/22 ,  G02B27/26 ,  G02F1/133504 ,  G02F1/133553 ,  G02F2001/133638 ,  H01S3/1065 ,  H01S5/02236 ,  H01S5/026 ,  H01S5/0425 ,  H01S5/0624 ,  H01S5/06243 ,  H01S5/105 ,  H01S5/14 ,  H01S5/18 ,  H01S5/18302 ,  H01S5/18361 ,  H01S5/34313 ,  H01S5/4093 ,  H01S5/423 ,  H01S2301/20

Abstract: Provided is a semiconductor laser device including a plurality of semiconductor laser units LDC that are capable of being independently driven, and a spatial light modulator SLM that is optically coupled to a group of the plurality of semiconductor laser units LDC. Each of the semiconductor laser units includes a pair of clad layers having an active layer 4 interposed therebetween, and a diffractive lattice layer 6 that is optically coupled to the active layer 4. The semiconductor laser device includes a ¼ wavelength plate 26 that is disposed between a group of the active layers 4 of the plurality of semiconductor laser units LDC and a reflection film 23, and a polarizing plate 27 that is disposed between the group of the active layers 4 of the plurality of semiconductor laser units LDC and a light emitting surface.

公开(公告)号：US20250079792A1

公开(公告)日：2025-03-06

申请号：US18844129

申请日：2023-03-06

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Kibo OTE ,  Yoshitaka KUROSAKA ,  Kazuyoshi HIROSE ,  Yuu TAKIGUCHI ,  Takahiro SUGIYAMA ,  Soh UENOYAMA

IPC: H01S5/042 ,  H01S5/22 ,  H01S5/223

Abstract: A semiconductor light-emitting element includes a semiconductor stacked layer, an electrode, and an electrode. The semiconductor stacked layer includes an active layer and a phase modulation layer. The phase modulation layer includes a plurality of phase modulation areas. Each of the plurality of phase modulation areas includes a basic region which has a first refractive index and a plurality of different-refractive-index regions which have a second refractive index different from the first refractive index and which are distributed in a two-dimensional shape. The electrode includes a plurality of electrode parts overlapping the plurality of phase modulation areas when seen in a stacking direction of the semiconductor stacked layer. The plurality of electrode parts are electrically isolated from each other. Laser light oscillating in each of the plurality of phase modulation areas is applied to a common irradiation area as light images according to arrangement of the plurality of different-refractive-index regions.

公开(公告)号：US20240030366A1

公开(公告)日：2024-01-25

申请号：US18265010

申请日：2021-09-08

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Hayato ISHIDA ,  Masaki HIROSE ,  Noburo HOSOKAWA ,  Soh UENOYAMA ,  Kazuyoshi HIROSE ,  Kazunori TANAKA

IPC: H01L31/0232 ,  H01L31/0216

CPC classification number: H01L31/02327 ,  H01L31/02161

Abstract: The light detector includes: a substrate including at least one light receiving area and a light incident surface on which light is incident; and a meta-lens formed on the light incident surface of the substrate to focus the light incident on the light incident surface. When viewed from the thickness direction (Z-axis direction) of the substrate, the meta-lens is formed so as to overlap both an adjacent region adjacent to the light receiving area and a peripheral region that is continuous with the adjacent region and is a region inside the light receiving area along the outer edge of the light receiving area. When viewed from the Z-axis direction, a non-forming region in which the meta-lens is not formed is provided in a region overlapping a central region of the light receiving area in the light incident surface.

公开(公告)号：US20230298897A1

公开(公告)日：2023-09-21

申请号：US18095620

申请日：2023-01-11

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Wei DONG ,  Kazuyoshi HIROSE

IPC: H01L21/3065 ,  H01L21/3205 ,  H01L33/20

CPC classification number: H01L21/30655 ,  H01L21/32053 ,  H01L33/20 ,  H01L31/108

Abstract: Provided is a semiconductor device including: a semiconductor layer having an uneven structure configured to include a recessed portion on one surface side thereof; a first electrode film (first deposited film) provided on the one surface of the semiconductor layer; and a second electrode film (second deposited film) provided on a bottom surface of the recessed portion, wherein an enlarged portion having a cross-sectional area enlarged with respect to a portion on an opening portion side of the recessed portion is provided.

公开(公告)号：US20230102430A1

公开(公告)日：2023-03-30

申请号：US17792181

申请日：2021-01-15

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Yoshitaka KUROSAKA ,  Kazuyoshi HIROSE ,  Soh UENOYAMA

IPC: H01S5/11 ,  H01S5/042

Abstract: An embodiment relates to a light source module dynamically controlling a phase distribution of light. The light source module includes a semiconductor stack portion. The semiconductor stack portion includes a stacked body including an active layer and a photonic crystal layer causing Γ-point oscillation, and includes a phase synchronization portion and an intensity modulation portion which are arranged in a Y-direction as one resonance direction of the photonic crystal layer. The stacked body in the intensity modulation portion has M (≥2) pixels each arranged in an X-direction and including N1 (≥2) subpixels. A length of a region including consecutive N2 (≥2, ≤N1) subpixels among the N1 subpixels, defined in the X-direction, is smaller than an emission wavelength of the active layer. The light source module outputs laser light from each M pixel included in the intensity modulation portion in a direction intersecting both X- and Y-directions.

公开(公告)号：US20220278505A1

公开(公告)日：2022-09-01

申请号：US17749893

申请日：2022-05-20

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Takahiro SUGIYAMA ,  Yuu TAKIGUCHI ,  Yoshitaka KUROSAKA ,  Kazuyoshi HIROSE ,  Yoshiro NOMOTO ,  Soh UENOYAMA

IPC: H01S5/11 ,  H01S5/042 ,  H01S5/42

Abstract: The present embodiment relates to a single semiconductor light-emitting element including a plurality of light-emitting portions each of which is capable of generating light of a desired beam projection pattern and a method for manufacturing the semiconductor light-emitting element. In the semiconductor light-emitting element, an active layer and a phase modulation layer are formed on a common substrate layer, and the phase modulation layer includes at least a plurality of phase modulation regions arranged along the common substrate layer. The plurality of phase modulation regions are obtained by separating the phase modulation layer into a plurality of places after manufacturing the phase modulation layer, and as a result, the semiconductor light-emitting element provided with a plurality of light-emitting portions that have been accurately aligned can be obtained through a simple manufacturing process as compared with the related art.

公开(公告)号：US20220187636A1

公开(公告)日：2022-06-16

申请号：US17598465

申请日：2020-03-27

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Soh UENOYAMA ,  Yoshitaka KUROSAKA ,  Kazuyoshi HIROSE

IPC: G02F1/03

Abstract: The present embodiment relates to a variable-phase device including a new device structure that can solve various problems. The variable-phase device includes M pixels (where M is an integer of 2 or more) arrayed one-dimensionally or two-dimensionally, the M pixels each emitting light or modulating light. The array pitch of the M pixels is less than the wavelength of incident light and is constant along a predetermined direction. Each of the M pixels includes N sub-pixels (where N is an integer of 2 or more) each having a structure allowing the phase of outgoing light to vary. With respect to each of the M pixels, N partial light beams outputted from the N sub-pixels are combined into light having a single phase in the far field.

公开(公告)号：US20210318611A1

公开(公告)日：2021-10-14

申请号：US17226721

申请日：2021-04-09

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Soh UENOYAMA ,  Hiroki KAMEI ,  Kazuyoshi HIROSE

IPC: G03F7/00 ,  G02B27/00

Abstract: A method for producing an optical element includes: forming a resist layer on a main surface of a substrate; forming a pattern region in the resist layer; forming a groove; forming a dielectric layer covering the pattern region; and forming an optical functional portion. The pattern region is formed in the resist layer. The groove is formed in a portion corresponding to a periphery of the pattern region as viewed in a direction orthogonal to the main surface. A dielectric is deposited to form the dielectric layer. After the dielectric layer covering the pattern region is formed, the resist layer is removed to form the optical functional portion at a position where the pattern region is disposed on the main surface. The optical functional portion is made of the dielectric.