Abstract:
Systems and method for filtering emissions from scintillators are provided. One system includes a scintillator having a scintillator material portion formed from a base scintillator material. The scintillator also includes a photodetector and a filter portion, The filter portion includes a material blocking near-infrared (IR) emissions. The filter portion is disposed on a surface of one of the scintillator material portion or the photodetector, and wherein the scintillator material portion, the photodetector, and the filter portion are coupled together. The filter portion blocks the near-IR emissions from impinging on the photodetector.
Abstract:
Low-HF or HF-free processes for improving color stability of a Mn+4 doped phosphor of formula I include contacting the phosphor of formula I with a solution that contains hexafluorosilicic acid, and isolating a treated phosphor of formula I having improved color stability relative to an untreated phosphor of formula I Ax[MFy]:Mn+4 (I) wherein A is Li, Na, K, Rb, Cs, R4 or a combination thereof; M is Si, Ge, Sn, Ti, Zr, Al, Ga, In, Sc, Y, La, Nb, Ta, Bi, Gd, or a combination thereof; R is H, lower alkyl, or a combination thereof; x is the absolute value of the charge of the [MFy] ion; and y is 5, 6 or 7.
Abstract:
An ink composition is provided. The composition includes a binder material and at least one narrow band emission phosphor being uniformly dispersed throughout the composition, wherein the narrow band emission phosphor has a D50 particle size from about 0.1 μm to about 15 μm and is selected from the group consisting of a green-emitting U6+-containing phosphor, a green-emitting Mn2+-containing phosphor, a red-emitting phosphor based on complex fluoride materials activated by Mn4+, and a mixture thereof. A device is also provided.
Abstract:
The present disclosure relates to a device used in conjunction with night vision equipment. The device including an LED light source optically coupled and/or radiationally connected to a phosphor material including a green-emitting phosphor and a red-emitting phosphor of formula I:
wherein A is Li, Na, K, Rb, Cs, or a combination thereof; M is Si, Ge, Sn, Ti, Zr, Al, Ga, In, Sc, Hf, Y, La, Nb, Ta, Bi, Gd, or a combination thereof; x is an absolute value of a charge of the MFy ion; and y is 5, 6 or 7. The device limits emission of wavelengths longer than 650 nm to less than 1.75% of total emission. A device including an LED light source optically coupled and/or radiationally connected to a red-emitting phosphor including Na2SiF6:Mn4+is also provided.
Abstract:
A phosphor composition is derived from combining K2SiF6:Mn4+ in solid form with a saturated solution of a manganese-free complex fluoride including a composition of formula I: A3[MF6], where A is selected from Na, K, Rb, and combinations thereof and M is selected from Al, Ga, In, Sc, Y, Gd, and combinations thereof. The composition of formula I: A3[MF6] has a water solubility lower than a water solubility of K2SiF6. A lighting apparatus including the phosphor composition is also provided.
Abstract:
A process for fabricating a LED lighting apparatus includes disposing a composite coating on a surface of a LED chip. The composite coating comprises a first composite layer having a manganese doped phosphor of formula I and a first binder, and a second composite layer comprising a second phosphor composition and a second binder. The first binder, the second binder or both include a poly(meth)acrylate. Ax[MFy]:Mn4+ (I) wherein A is Li, Na, K, Rb, Cs, or a combination thereof; M is Si, Ge, Sn, Ti, Zr, Al, Ga, In, Sc, Hf, Y, La, Nb, Ta, Bi, Gd, or a combination thereof; x is the absolute value of the charge of the [MFy] ion; y is 5, 6 or 7.
Abstract:
Methods for fabricating coated semiconductor elements are presented. The methods include the steps of combining a phosphor of formula I and a polymer binder to form a composite material, providing a semiconductor wafer including IniGajAlkN, wherein 0≦i; 0≦j; 0≦k, and a sum of i, j and k is equal to 1, coating the composite material on a surface of the semiconductor wafer to form a coated semiconductor wafer, and dicing the coated semiconductor wafer using a cutting fluid apparatus to form one or more coated semiconductor elements. A cutting fluid of the cutting fluid apparatus includes a C1-C20 alcohol, a C1-C20 ketone, a C1-C20 acetate compound, acetic acid, oleic acid, carboxylic acid, a source of A, silicic acid, or a combination thereof.
Abstract:
A coated phosphors that include a shell comprising a first Medoped phosphor of formula I Ax[MFy]:Mn4+ I directly disposed on a core comprising a second phosphor. The second phosphor is a material other than a compound of formula I or formula II Ax[MFy] II wherein A is, independently at each occurrence, Li, Na, K, Rb, Cs, or a combination thereof; M is, independently at each occurrence, Si, Ge, Sn, Ti, Zr, Al, Ga, In, Sc, Hf, Y, La, Nb, Ta, Bi, Gd, or a combination thereof; x is the absolute value of the charge of the [MFy] ion; and y is 5, 6 or 7.
Abstract:
A lighting apparatus includes a semiconductor light source in direct contact with a polymer composite comprising a color stable Mn4+ doped phosphor, wherein the lighting apparatus has a color shift of 1.5 MacAdam ellipses after operating for at least 2,000 hour at a LED current density greater than 2 A/cm2, a LED wall-plug efficiency greater than 40%, and a board temperature greater than 25° C.
Abstract:
Low-HF or HF-free processes for improving color stability of a Mn+4 doped phosphor of formula I include contacting the phosphor of formula I with a solution that contains hexafluorosilicic acid, and isolating a treated phosphor of formula I having improved color stability relative to an untreated phosphor of formula I Ax[MFy]:Mn+4 (I) wherein A is Li, Na, K, Rb, Cs, R4 or a combination thereof; M is Si, Ge, Sn, Ti, Zr, Al, Ga, In, Sc, Y, La, Nb, Ta, Bi, Gd, or a combination thereof; R is H, lower alkyl, or a combination thereof; x is the absolute value of the charge of the [MFy] ion; and y is 5, 6 or 7.