公开(公告)号：US08405190B2

公开(公告)日：2013-03-26

申请号：US12998868

申请日：2009-10-20

申请人： Achim Trautmann ,  Thorsten Mueller

发明人： Achim Trautmann ,  Thorsten Mueller

IPC分类号： H01L29/40 ,  H01L23/053 ,  H01L23/12 ,  H01L23/48 ,  H01L23/52

CPC分类号： H01L21/486 ,  H01L21/76898 ,  H01L23/147 ,  H01L23/481 ,  H01L23/49827 ,  H01L23/49894 ,  H01L2924/0002 ,  H01L2924/00

摘要： A component including a via for electrical connection between a first and a second plane of a substrate is provided. The substrate has a borehole having an inner wall that is coated with a conductive layer made of an electrically conductive material, an intermediate layer being disposed between the inner wall and the conductive layer. The intermediate layer includes electrically insulating SiC.

摘要翻译： 提供了包括用于基板的第一和第二平面之间的电连接的通孔的部件。 衬底具有内壁的内壁，该内壁涂覆有由导电材料制成的导电层，中间层设置在内壁和导电层之间。 中间层包括电绝缘的SiC。

公开(公告)号：US20120187509A1

公开(公告)日：2012-07-26

申请号：US13120994

申请日：2009-09-15

申请人： Knut Gottfried ,  Maik Wiemer ,  Axel Franke ,  Achim Trautmann ,  Ando Feyh ,  Sonja Knies ,  Joerg Froemel

发明人： Knut Gottfried ,  Maik Wiemer ,  Axel Franke ,  Achim Trautmann ,  Ando Feyh ,  Sonja Knies ,  Joerg Froemel

IPC分类号： H01L29/84 ,  H01L21/768 ,  H01L23/48

CPC分类号： B81C1/00238 ,  B81B2207/012 ,  B81C2203/0118 ,  B81C2203/019 ,  B81C2203/038 ,  H01L24/94 ,  H01L2224/81801 ,  H01L2924/00013 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01049 ,  H01L2924/01058 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/01327 ,  H01L2924/14 ,  H01L2924/1433 ,  H01L2924/1461 ,  H01L2224/13099 ,  H01L2224/13599 ,  H01L2224/05599 ,  H01L2224/05099 ,  H01L2224/29099 ,  H01L2224/29599 ,  H01L2924/00

摘要： A contact arrangement for establishing a spaced, electrically conducting connection between a first wafer and a second wafer includes an electrical connection contact, a passivation layer on the electrical connection contact, and a dielectric spacer layer arranged on the passivation layer, wherein the contact arrangement is arranged at least on one of the first wafer and the second wafer, wherein the contact arrangement comprises trenches at least partly filled with a first material capable of forming a metal-metal connection, wherein the trenches are continuous trenches from the dielectric spacer layer through the passivation layer as far as the electrical connection contact, and wherein the first material is arranged in the trenches from the electrical connection contact as far as the upper edge of the trenches.

摘要翻译： 用于在第一晶片和第二晶片之间建立间隔的导电连接的接触装置包括电连接触点，电连接触点上的钝化层以及布置在钝化层上的电介质间隔层，其中触点布置是 布置在所述第一晶片和所述第二晶片中的至少一个上，其中所述接触装置包括至少部分地填充有能够形成金属 - 金属连接的第一材料的沟槽，其中所述沟槽是来自所述电介质间隔层的连续沟槽， 钝化层直到电连接接触，并且其中第一材料从电连接触点设置在沟槽中，直到沟槽的上边缘。