-
公开(公告)号:US11251328B2
公开(公告)日:2022-02-15
申请号:US16871303
申请日:2020-05-11
申请人: EPISTAR CORPORATION
发明人: Hsin-Chih Chiu , Chih-Chiang Lu , Chun-Yu Lin , Ching-Huai Ni , Yi-Ming Chen , Tzu-Chieh Hsu , Ching-Pei Lin
摘要: A semiconductor light-emitting device comprises a substrate; a first adhesive layer on the substrate; multiple epitaxial units on the first adhesive layer; a second adhesive layer on the multiple epitaxial units; multiple first electrodes between the first adhesive layer and the multiple epitaxial units, and contacting the first adhesive layer and the multiple epitaxial units; and multiple second electrodes between the second adhesive layer and the multiple epitaxial units, and contacting the second adhesive layer and the multiple epitaxial units; wherein the multiple epitaxial units are totally separated.
-
公开(公告)号:US11245060B2
公开(公告)日:2022-02-08
申请号:US16192292
申请日:2018-11-15
申请人: EPISTAR CORPORATION
发明人: Chih-Chiang Lu , Wei-Chih Peng , Shiau-Huei San , Min-Hsun Hsieh
IPC分类号: H01L33/60 , H01L33/62 , H01L33/38 , H01L33/00 , H01L33/40 , H01L33/06 , H01L33/22 , H01L33/28 , H01L33/30 , H01L33/32 , H01L33/50 , H01L33/56 , H01L33/44
摘要: A semiconductor device comprising: a substrate; a first reflector on the substrate; a second reflector on the first reflector; a semiconductor system directly contacting the first reflector and the second reflector and comprising a first side wall; and an insulating layer covering the first side wall and formed between the substrate and the first reflector.
-
公开(公告)号:US10511140B2
公开(公告)日:2019-12-17
申请号:US16106458
申请日:2018-08-21
申请人: EPISTAR CORPORATION
发明人: Tzu-Chieh Hsu , Yi-Wen Huang , Yi-Hung Lin , Chih-Chiang Lu
IPC分类号: H01S5/187 , H01S5/042 , H01S5/183 , H01S5/22 , H01S5/343 , H01S5/022 , H01S5/026 , H01S5/028 , H01S5/42
摘要: A light-emitting device is provided. The light-emitting device comprises: a substrate; and multiple radiation emitting regions arranged on the substrate, and comprising: a first radiation emitting region capable of emitting coherent light and emits a coherent light when driven by a first current; a second radiation emitting region capable of emitting coherent light and emits an incoherent light when driven by the first current, wherein each of the first radiation emitting region and the second emitting region comprises epitaxial structure comprising a first DBR stack, a light-emitting structure, and a second DBR stack.
-
公开(公告)号:US20190259906A1
公开(公告)日:2019-08-22
申请号:US16405240
申请日:2019-05-07
申请人: EPISTAR CORPORATION
发明人: Hsin-Chih Chiu , Chih-Chiang Lu , Chun-Yu Lin , Ching-Huai Ni , Yi-Ming Chen , Tzu-Chieh Hsu , Ching-Pei Lin
摘要: A semiconductor light-emitting device comprises a substrate; a first adhesive layer on the substrate; multiple epitaxial units on the first adhesive layer; a second adhesive layer on the multiple epitaxial units; multiple first electrodes between the first adhesive layer and the multiple epitaxial units, and contacting the first adhesive layer and the multiple epitaxial units; and multiple second electrodes between the second adhesive layer and the multiple epitaxial units, and contacting the second adhesive layer and the multiple epitaxial units; wherein the multiple epitaxial units are totally separated.
-
公开(公告)号:US10224455B2
公开(公告)日:2019-03-05
申请号:US14100999
申请日:2013-12-09
申请人: EPISTAR CORPORATION
发明人: Min-Hsun Hsieh , Chih-Chiang Lu , Ching-Pu Tai
摘要: A light-emitting device includes a transparent substrate, a transparent adhesive layer on the transparent substrate, a first transparent conductive layer on the transparent adhesive layer, a multi-layer epitaxial structure and a first electrode on the transparent conductive layer, and a second electrode on the multi-layer epitaxial structure. The multi-layer epitaxial structure includes a light-emitting layer. The transparent substrate has a first surface facing the transparent adhesive layer and a second surface opposite to the first surface, wherein the area of the second surface is larger than that of the light-emitting layer, and the area ratio thereof is not less than 1.6.
-
公开(公告)号:US09793454B2
公开(公告)日:2017-10-17
申请号:US14992785
申请日:2016-01-11
申请人: EPISTAR CORPORATION
发明人: Chien-Fu Huang , Shiuan-Leh Lin , Chih-Chiang Lu , Chia-Liang Hsu
CPC分类号: H01L33/12 , H01L33/0079 , H01L33/02 , H01L33/10 , H01L33/22 , H01L33/30 , H01L33/32 , H01L33/46 , H01L33/58 , H01L2933/0033 , H01L2933/0058 , H01L2933/0091
摘要: This disclosure discloses a method for making a light-emitting device, comprising steps of: providing a substrate; forming a light-emitting stack on the substrate; forming a first layer on the light-emitting stack; providing a permanent substrate; forming a second layer on the permanent substrate; bonding the first layer and the second layer to form a bonding layer to connect the substrate and the permanent substrate; wherein a refractive index of the bonding layer decreases from the light-emitting stack toward the permanent substrate.
-
公开(公告)号:US09153944B2
公开(公告)日:2015-10-06
申请号:US14173650
申请日:2014-02-05
申请人: Epistar Corporation
发明人: Shih-Chang Lee , Chih-Chiang Lu , Yi-Hung Lin , Wu-Tsung Lo , Ta-Chuan Kuo
CPC分类号: H01S5/423 , H01S5/02276 , H01S5/0425 , H01S5/18313 , H01S5/18333 , H01S5/18338 , H01S5/1835
摘要: A light-emitting array comprises a plurality of light-emitting elements, wherein each of the plurality of light-emitting elements comprises a first semiconductor stack; and a plurality of bridge structures connected to the plurality of light-emitting elements, wherein the plurality of light-emitting elements are spaced apart by the plurality of bridge structures, wherein each of the plurality of bridge structures comprise a second semiconductor stack which has the same epitaxial stack as the first semiconductor stack.
摘要翻译: 发光阵列包括多个发光元件,其中所述多个发光元件中的每一个包括第一半导体叠层; 以及连接到所述多个发光元件的多个桥结构,其中所述多个发光元件被所述多个桥结构间隔开,其中所述多个桥结构中的每一个包括第二半导体堆叠,所述第二半导体堆叠具有 与第一半导体堆叠相同的外延堆叠。
-
公开(公告)号:US08749773B2
公开(公告)日:2014-06-10
申请号:US13741561
申请日:2013-01-15
申请人: Epistar Corporation
发明人: Tang-Chung Chao , Pei-Hsiang Tseng , Jia-Kuan Kuo , Guan-Hung Wu , Yuan-Hao Su , Chi-Hsin Ho , Chia-Liang Hsu , Chih-Chiang Lu
IPC分类号: G01J1/04
CPC分类号: G01J1/0474 , G01J1/4228 , G01J2001/0481 , G01J2001/4252 , G01R31/2635
摘要: Disclosed is a method for testing a light-emitting device comprising the steps of: providing an integrating sphere comprising an inlet port and a first exit port; disposing the light-emitting device close to the inlet port of the integrating sphere; providing a current source to drive the light-emitting device to form an image of the light-emitting device in driven state; providing an image receiving device and to receive the image of the light-emitting device, wherein the image receiving device is connected to the first exit port of the integrating sphere; and determining a luminous intensity of the light-emitting device according to the image. An apparatus for testing a light-emitting device is also disclosed. The apparatus for testing a light-emitting device comprises: an integrating sphere comprising an inlet port and a first exit port, wherein the light-emitting device is disposed close to the inlet port of the integrating sphere; an image receiving device connected to the first exit port of the integrating sphere for receiving an image of the light-emitting device; and a processing unit coupled to image receiving device for determining a luminous intensity of the light-emitting device.
摘要翻译: 公开了一种用于测试发光器件的方法,包括以下步骤:提供包括入口和第一出口的积分球; 将发光装置配置在靠近积分球的入口的位置; 提供电流源以驱动所述发光器件以在驱动状态下形成所述发光器件的图像; 提供图像接收装置并且接收所述发光装置的图像,其中所述图像接收装置连接到所述积分球的所述第一出口; 以及根据图像确定发光装置的发光强度。 还公开了一种用于测试发光器件的装置。 用于测试发光装置的装置包括:积分球,包括入口和第一出口,其中所述发光装置设置成靠近所述积分球的入口; 连接到积分球的第一出口的图像接收装置,用于接收发光装置的图像; 以及耦合到图像接收装置的处理单元,用于确定发光装置的发光强度。
-
公开(公告)号:US08643054B2
公开(公告)日:2014-02-04
申请号:US14011502
申请日:2013-08-27
申请人: Epistar Corporation
发明人: Chien-Fu Huang , Min-Hsun Hsieh , Chih-Chiang Lu , Chia-Liang Hsu , Shih-I Chen
CPC分类号: H01L33/24 , H01L24/05 , H01L33/0079 , H01L33/10 , H01L33/20 , H01L33/22 , H01L33/38 , H01L33/387 , H01L33/62 , H01L2224/05552 , H01L2924/12032 , H01L2924/12041 , H01L2924/12042 , H01L2924/00
摘要: A light-emitting device includes a semiconductor light-emitting stack; a current injected portion formed on the semiconductor light-emitting stack; an extension portion having a first branch radiating from the current injected portion and a second branch extending from the first branch; an electrical contact structure between the second branch and the semiconductor light-emitting stack and having a first width; and a current blocking structure located right beneath the electrical contact structure and having a second width larger than the first width.
摘要翻译: 发光装置包括半导体发光叠层; 形成在半导体发光叠层上的电流注入部分; 具有从所述电流注入部分辐射的第一分支的延伸部分和从所述第一分支延伸的第二分支; 所述第二分支和所述半导体发光叠层之间的电接触结构具有第一宽度; 以及位于电接触结构正下方并且具有大于第一宽度的第二宽度的电流阻挡结构。
-
公开(公告)号:US20130115725A1
公开(公告)日:2013-05-09
申请号:US13730130
申请日:2012-12-28
申请人: Epistar Corporation
发明人: Min-Hsun HSIEH , Kuen-Ru CHUANG , Shu-Wen SUNG , Chia-Cheng LIU , Chao-Nien HUANG , Shane-Shyan Wey , Chih-Chiang Lu , Ming-Jiunn Jou
IPC分类号: H01L33/02
CPC分类号: H01L33/16 , H01L21/2007 , H01L33/0079 , H01L33/02 , H01L33/30 , H01L33/32 , H01L33/42
摘要: A light emitting diode having a transparent substrate and a method for manufacturing the same. The light emitting diode is formed by creating two semiconductor multilayers and bonding them. The first semiconductor multilayer is formed on a non-transparent substrate. The second semiconductor multilayer is created by forming an amorphous interface layer on a transparent substrate. The two semiconductor multilayers are bonded and the non-transparent substrate is removed, leaving a semiconductor multilayer with a transparent substrate.
摘要翻译: 一种具有透明基板的发光二极管及其制造方法。 发光二极管通过产生两个半导体多层并结合而形成。 第一半导体多层形成在非透明基板上。 通过在透明基板上形成非晶界面层来形成第二半导体多层。 将两个半导体多层结合,并且去除非透明衬底,留下具有透明衬底的半导体多层。
-
-
-
-
-
-
-
-
-